• KSII Transactions on Internet and Information Systems (TIIS)
• /
• v.15 no.11
• /
• pp.4203-4223
• /
• 2021

Accelerated by the Internet of Things (IoT), the need for further technical innovations and developments within wireless communications beyond the fifth generation (B5G) networks is up-and-coming in the past few years. High altitude platform station (HAPS) communication is expected to achieve such high levels that, with high data transfer rates and low latency, millions of devices and applications can work seamlessly. The HAPS has emerged as an indispensable component of next-generations of wireless networks, which will therefore play an important role in promoting massive IoT interconnectivity with 6G. The performance of communication and key technology mainly depend on the characteristic of channel, thus we propose an efficient Markov chain based channel model, then analyze the HAPS communication system's uplink capability and swing effect through experiments. According to the simulation results, the efficacy of the proposed scheme is proven to meet the requirements of ubiquitous connectivity in future IoT enabled by 6G.

• Membrane Journal
• /
• v.4 no.1
• /
• pp.1-8
• /
• 1994

There are growing needs to produce relatively high purity(99.0% or higher) oxygen at low cost. For small scale production, both pressure swing adsorption(PSA) and membrane process are competitive and less expensive or more convenient than well known cryogenic fractionation technology. A continuous membrane column(CMC) combined with a PSA oxygen generator can be employed to produce high purity oxygen continuously. The oxygen enriched gas generated by a PSA unit, with a concentration of 93~94%, is fed to the CMC that consism of three modules of poly(imide) hollow fibers. Several experiments were conducted by varying parameters, such as feed flow rate, transmembrane pressure drop, stage cut, and feed location in order to obtain a high oxygen concentration above 99.0%. A two-series unit mode was also employed with CMC operation to optimize the given membrane area.

• Journal of Advanced Marine Engineering and Technology
• /
• v.27 no.6
• /
• pp.759-766
• /
• 2003

The amount of container freight continuously has been increased. and the low efficiency of container crane causes jamming frequently in transportation and cargo handling at port. The conventional control techniques based on a mathematical model are not well suited for dealing with ill-defined and uncertain systems. Recently. Fuzzy control has been successfully applied to a wide variety of practical problems as robots. automatic train operation system. etc. In this paper. a fuzzy controller for container crane is proposed to accomplish a design of improved control system for minimizing the swing motion at destination. In this scheme a mathematical model for the system is obtained in state space form. Finally. to exhibit the tracking performance and robustness of the proposed controller. computer simulations were carried out with various references, parameter variations and disturbances.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.167-168
• /
• 2000

We propose a signaling circuit that can reduce power consumption and Electromagnetic Interference (EMI) in a Liquid Crystal Display (LCD) controller-to-source driver interface. The proposed signaling circuit consists of a coder/decoder that can minimize temporal bit transitions in a transmission line and a current-mode driver that can convert voltage swing into a very small amount of current. We have simulated the proposed signaling circuit using the HSPICE and the proposed signaling circuit has been designed in a 0.25 ${\mu}m$ CMOS technology.

• Proceedings of the Membrane Society of Korea Conference
• /
• 1994.03a
• /
• pp.1-21
• /
• 1994

There are growing needs to produce relatively high purity (99.0% or higher) oxygen at low cost. For small scale production, both pressure swing adsorption (PSA) and membrane process are competitve and less expensive or more convient than well known crygenic fractionation technology. A continuous membrane colume (CMC) combined with a PSA oxygen generator can be employed to produce high purity oxygen continuosly. The oxygen-enriched gas generated by a PSA unit, with a concentration of 93-94%, is fed to the CMC that consists of three modules of poly(imide) hollow fibers. Several experiments were conducted by varying parameters, such feed flow rate, transmenbrane pressure drop, stage cut, and feed location in order to obtain a high oxygen concentration above 99.0%. A two-series unit mode was also employed with CMC operation to optimize the given membrane area.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.6
• /
• pp.847-853
• /
• 2016

Applications of Si have been increasingly exploited and extended to More-Moore, More-than-Moore, and beyond-CMOS approaches. Ge is regarded as one of the supplements for Si owing to its higher carrier mobilities and peculiar band structure, facilitating both advanced and optical applications. As an emerging metal-oxide device, the junctionless field-effect transistor (JLFET) has drawn considerable attention because of its simple process, less performance fluctuation, and stronger immunity against short-channel effects due to the absence of anisotype junctions. In this study, we investigated lateral field scalability, which is equivalent to channel-length scaling, in Si and Ge JLFETs. Through this, we can determine the usability of Si CMOS and hypothesize its replacement by Ge. For simulations with high accuracy, we performed rigorous modeling for ${\mu}_n$ and ${\mu}_p$ of Ge, which has seldom been reported. Although Ge has much higher ${\mu}_n$ and ${\mu}_p$ than Si, its saturation velocity ($v_{sat}$) is a more determining factor for maximum $I_{on}$. Thus, there is still room for pushing More-Moore technology because Si and Ge have a slight difference in $v_{sat}$. We compared both p- and n-type JLFETs in terms of $I_{on}$, $I_{off}$, $I_{on}/I_{off}$, and swing with the same channel doping and channel length/thickness. $I_{on}/I_{off}$ is inherently low for Ge but is invariant with $V_{DS}$. It is estimated that More-Moore approach can be further driven if Si is mounted on a JLFET until Ge has a strong possibility to replace Si for both p- and n-type devices for ultra-low-power applications.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.41 no.8
• /
• pp.505-510
• /
• 2017

This paper presents a low-cost robotic device for shoulder rehabilitation, which is capable of treating various shoulder disabilities. A 3-DOF passive shoulder joint tracking module was designed to allow for translational motion of the shoulder joint center during arm swing, which is essential for natural shoulder movement. The weight of the user's arm and the device were compensated for by springs, to enable gravity-free shoulder motion. In order to reduce the device's cost, only one actuator was used, which can be aligned with the user's shoulder joint in various orientations. The device is capable of implementing five representative shoulder motions, including flexion/extension, abduction/adduction, horizontal abd/adduction, internal/external rotation, and oblique raise. The proposed low-cost shoulder rehabilitation robot is expected to provide effective rehabilitation for patients with various shoulder impairments.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.2
• /
• pp.163-168
• /
• 2014

Bottom gate thin-film transistors were fabricated using solution processed IGZO channel layers with various gallium composition ratios that were annealed on a hot plate. Increasing the gallium ratio from 0.1 to 0.6 induced a threshold voltage shift in the electrical characteristics, whereas the molar ratio of In:Zn was fixed to 1:1. Among the devices, the IGZO-TFTs with gallium ratios of 0.4 and 0.5 exhibited suitable switching characteristics with low off-current and low SS values. The IGZO-TFTs prepared from IGZO films with a gallium ratio of 0.4 showed a mobility, on/off current ratio, threshold voltage, and subthreshold swing value of $0.1135cm^2/V{\cdot}s$, ${\sim}10^6$, 0.8 V, and 0.69 V/dec, respectively. IGZO-TFTs annealed at $300^{\circ}C$, $350^{\circ}C$, and $400^{\circ}C$ were also fabricated. Annealing at lower temperatures induced a positive shift in the threshold voltage and produced inferior electrical properties.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.38 no.2
• /
• pp.50-55
• /
• 2001

In this paper, a 8bit parity checker/generator is designed using a new gate which is proposed to implement the exclusive or(XOR) and exclusive-nor(XNOR) functions for low power consumption on transistor level. Conventional XOR/XNOR gate such as CPL, DPL and CCPL designed to reduce the power consumption has an inverter to get the full swing output signals. But this inverter consumes the major part of power and causes the time delay on CMOS circuits. Thus a new technique was adopted not utilizing inverter in the circuits. The results of simulation by Hspice shows 33% of power reduction compared with CCPL gate when A 8 bit parity checker was made with the proposed new gate using $0.8{\mu}mCMOS$ technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.8
• /
• pp.575-581
• /
• 2013

The self-cascode (SC) structure has low output voltage swing and high output resistance. In order to implement a simple and better SC structure, the native-$V_{th}$ MOSFETs which has low threshold voltage($V_{th}$) is applied. The proposed SC structure is designed using a qualified industry standard $0.18-{\mu}m$ CMOS technology. Measurement results show that the proposed SC structure has higher transconductance as well as output resistance than single MOSFET. In addition, analog building blocks (e.g. current mirror, basic amplifier circuits) with the proposed SC structure are investigated using by Cadence Spectre simulator. Simulation results show improved electrical performances.