• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.26 no.2
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• pp.204-212
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• 1990

The SMC composite, now being considered in certain structural applications, is anticipated to experience repeated loading during service. Thus, understanding of the fatigue behavior is essential in proper use of the composite material. In this paper, using the SMC composite composed of E-glass chopped strand and unsaturated polyester resin three point bending fatigue tests are carried out to investigate the fatigue crack propagating behavior under various cyclic stresses and fatigue damage of various microcrack forms. The following results are obtained from this study; 1) Most of the total fatigue life of the SMC composite is consumed at the initial extension or the growth of the macroscopic crack. 2) A Paris' type power-law relationship between the crack propagation rate and stress intensity factor range is obtained, and the value of material constant m is much higher (m=9~11)than that of other metals. 3) In case of high cyclic stress the fatigue damage show high microcrack density and short crack length, but in case of low cyclic stress does it vice versa. 4) Fatigue damage is characterized by microcrack density, crack length and distribution of crack orientation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.969-973
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• 2009

In this study, the electrical and optical properties of $(SiO_2)_x(ZnO)_{100-x}$ (SZO) films prepared on the coming 7059 glass substrates by using rf-magnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates of the SZO film with $SiO_2$ content of 3 wt.% is $4\;{\AA}/s$. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap were decreased from 3.52 to 3.33 eV as an increase the deposition thickness. X-ray diffraction patterns showed that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO film with the $SiO_2$ contents of 2 wt.% showed the resistivity of about $3.8{\times}10^{-3}\;{\Omega}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.177-184
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• 1994

AlN-BN ceramics with BN contents in the range of 10 to 40 wt% were prepared by hot pressing using no additive, or 3 wt%, Y2O3 or CaO, which are common densification aids for AlN. And their machinability, bend strength, and microstructures were investigated. Both the main and radial cutting forces decreased with increasing BN content in all three kinds of samples. For the BN contents of 30 wt% or above, the cutting forces were lower than that of a mild steel tested at a same condition. Especially in the case of main forces, the values were less than a quarter of that of a mild steel, indicating excellent machinability. Bend strength (when the tensile surfaces of specimens were perpendicular to the hot pressing direction) also decreased with BN content mainly due to the much lower Young's modulus of BN compared to AlN. With the composition of 30 wt% BN at which the AlN-BN ceramics started to show better machinability than a mild steel, the bend strength was 150 to 160 MPa, which is greater than that of machinable glass-ceramics of a mica system. With tensile surfaces parallel to the hot pressing direction, however, the bend strength obtained for the samples processed with the sintering acids showed low values (about 40 MPa), since most BN particles had such orientation that their cleavage planes (i.e., basal planes) were perpendicular to the pressing direction.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.77-82
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• 1995

PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1869-1873
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• 2008

In this work, to make it possible to generate glow discharge in atmospheric pressure condition with relatively high and wide electric field, micro channel reactor is proposed. Si DRIE and Cr deposition by Ebeam evaporation is used to make channel and bottom electrode layer. Upper electrode is made from ITO glass to visualize discharge within micro channel. Fabricated reactor is verified by generating uniform glow plasma with N2 / He gases each as working fluid. The range of gas electric field to generate glow plasma is from about 200 V/cm and upper limit is not observed in tested condition of up to 150 kV/cm. This data shows that micro channel plasma reactor is more versatile. Indirect estimation of electron temperature in this reactor can be inferred that the electron temperature within glow discharge in micro reactor lies $0{\sim}2eV$. This research demonstrates that the reactor is appropriate in application that needs to maintain low temperature condition during chemical process.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.441-445
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• 1999

Alkaline earth metal oxides were added to the conventional MgO films as a protective layer for dielectric materials to have lower firing voltage(Vf) of the plasma display panel(PDP). Panels with various protective layers of MgO-alkaline earth metal oxides were prepared on glass by using e-beam evaporation and its effect on firing voltage characteristics were investigated. (Ba-Mg)O films had poor voltage characteristics because of higher activation energy of BaO. But, (Sr-Mg)O, (Ca-Mg)O and (Ca-Sr-Mg) O had better voltage characteristics than the conventional MgO. A mixture film of (Mg-Ca-Sr)O show the lowest firing voltage which is less than that of MgO by 20V. The chemical composition to have lowest firing voltage is MgO:SrO:CaO ratio of 6:2:2. The mixture of MgO-Alkaline earth metal oxides films showed good transmittance properties within the visual range.

• Journal of the Korean institute of surface engineering
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• v.38 no.4
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• pp.150-155
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• 2005

Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{\times}10^{-4}{\Omega}{\cdot}cm$ at 750 nm thickness, $200^{\circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.2
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• pp.130-137
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• 2016

Non-destructive testing methods for composite materials (e.g., carbon fiber-reinforced and glass fiber-reinforced plastic) have been widely used to detect damage in the overall industry. This study detects defects using optical infrared thermography. The transient heat transport in a solid body is characterized by two dynamic quantities, namely, thermal diffusivity and thermal effusivity. The first quantity describes the speed with thermal energy diffuses through a material, whereas the second one represents a type of thermal inertia. The defect detection rate is increased by utilizing a lock-in method and performing a comparison of the defect detection rates. The comparison is conducted by dividing the irradiation method into reflection and transmission methods and the irradiation time into 50 mHz and 100 mHz. The experimental results show that detecting defects at 50 mHz is easy using the transmission method. This result implies that low-frequency thermal waves penetrate a material deeper than the high-frequency waves.

• The Korean Journal of Physiology
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• v.20 no.2
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• pp.184-191
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• 1986

Membrane potential of cells in the isolated rabbit coronary sinus was measured by conventional glass microelectrode and investigated the effect of $[K^+]_0$ variation in control, 20 mM and Ach-containing Tyrode solution. The results obtained were as follows: 1) The resting membrane potential exposed to normal Tyrode solution containing 3 mM $K^+\;was\;about\;-60{\sim}\;-65mV$. At extracellular $K^+$ concentrations from 1 to 30 mM the resting Potential was reasonably well described by Goldman -Hodgkin -Katz equation on the assumption that $[K^+]_1$ was 150 mM and that the ratio of membrane permeability coefficient for $Na^+\;and\;K^+,\;P_{Na}/P_K\;({\alpha})$ was 0.07. 2) In 20 mM Na-Tyrode solution (replacing by equimolar Tris) the resting membrane potential was hyperpolarized by 15 to 20 mV and showed slightly deviated to depolarized direction compared to the predicted value by Goldman-Hodgkin -Katz equation. 3) In the presence of $10^{-6}M$ Ach, the resting potentials at $[K^+]_0$ levels from 1 to 30 mM were well fitted with the predicted value on the assumption that $P_{Na}/P_K$ was 0.0144. It could be concluded that the low resting membrane potential of coronary sinus cells reflects a relatively high ratio $P_{Na}/P_K$ of about 0.07.

• Journal of the Korean institute of surface engineering
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• v.43 no.4
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• pp.194-198
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• 2010

Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their $In_2O_3$ content (3.33-15.22 wt%). The ZIO films deposited with an $In_2O_3$ content of 9.54 wt% showed a relatively low resistivity of $9.13{\times}10^{-4}{\Omega}cm$ and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the $In_2O_3$ content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.