• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.685-688
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• 2008

Mini-LVDS has been widely used for high speed data transmission because it provides low EMI and high bandwidth for display driver. In this paper, a Mini-LVDS output buffer with LTPS TFT process is presented which provides sufficient performance in the presence of large variation in the threshold voltage and mobility and kink effect.

• Journal of the Korean Society of Combustion
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• v.10 no.4
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• pp.24-32
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• 2005

Various types of plasma source applied in $CH_4$ decomposition process are compared. DBD by pulse and AC power, spark by pulse and AC power, rotating arc and hollow cathode plasma are chosen to be compared. The results show that $CH_4$ conversion per given unit power is relatively high in hollow cathode plasma and rotating arc that induces rather high temperature condition and that is why both thermal dehydration and plasma induced decomposition contribute for the overall process. In case of DBD wherein high temperature electron and low temperature gas molecule coexist, the process shows low conversion rate, for in rather low temperature condition the contribution of thermal dehydration is lowered. Selectivity of $C_2H_6$ and $C_2H_2$ is shown to be a good parameter of the relative contribution of plasma chemistry in the overall process. From the results we concluded that required condition of plasma source for a cost effective and high yield $CH_4$ decomposition is to have characteristics of both thermal plasma and non thermal plasma in which temperature is high above a certain threshold state for thermal dehydration and electron induced collision is maximized in the same breath.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.1-7
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• 2007

In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2003.10a
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• pp.106-111
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• 2003

This study made an experiment On fatigue crack propagation da/dn, stress intensity factor range ${\Delta}K$ respectively in room temperature and in low temperature. And we got the following characteristics from fatigue crack growth test carried Out in the environment of room temperature and law temperature at $25^{\circ}C$, $-60^{\circ}C$, $-80^{\circ}C$, and $-100^{\circ}C$ in the range of stress ratio of 0.3 by means of opening made displacement. The threshold stress intensity factor range ${\Delta}Kth$ in the early stage of fatigue crack growth (Mode I) and stress intensity factor range ${\Delta}K$ in the stable of fatigue crack growth (Made II) was decreased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at law temperature and high temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.1077-1080
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• 1998

In this paper, a simple low-power current-mode CMOS wotage reference circuit is proposed. The reference circuit of enhancement-mode MOS transistors and resistors. Temperature compensation is made by adding a current component proportional to a thermal voltage to a current component proportional to a threshold voltage. The designed circuit has been simulated using a $0.65\mu\textrm{m}$ n-well CMOS process parameters. The simulation results show that the reference circuit has a temperature coefficient less than $7.8ppm/^{\circ}C$ and a power-supply(VDD) coefficient less than 0.079%/V for a temperature range from $-30^{\circ}C$ to $130^{\circ}C$ and a VDD range from 4.0V to 12V. The power consumption is 105㎼ for VDD=5V and $T=30^{\circ}C.$ The proposed reference circuit can be designed to generate a wide range of reference voltages owing to its current-mode operation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.8
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• pp.12-16
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• 2002

It is confirmed that the ITO(Indium Tin Oxide) thin films can be etched by low-temperature plasma at atmospheric pressure. The etching happened deepest at a hydrogen flow rate of 4 sccm, and the etch rate was 120 /min. The etching speed corresponded to the H$\alpha$* emission intensity The etching mechanism of the ITO thin films is as follows; thin films were reduced by H$\alpha$*, and the metal compound residues were detached from the substrate by reacting on the CH* The etching was started after etching time of initial 50 sec and above the threshold temperature of 145$^{\circ}C$. The activation energy of 0.16 eV(3.75 Kcal/mole) was obtained from the Arrehenius plots.

• Transactions of the Korean Society of Automotive Engineers
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• v.11 no.5
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• pp.219-226
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• 2003

The fatigue crack growth behavior of the SA516/60 steel used for pressure vessels was examined experimentally at room temperatures $25^{\circ}C$,$-30^{\circ}C$, $-60^{\circ}C$, $-80^{\circ}C$, $-100^{\circ}C$ and $-120^{\circ}C$ with stress ratio of R=0.05, 0.1 and 0.3. fatigue crack propagation rate da/dN related with stress intensity factor range $\Delta$K was influenced by stress ratio in stable than fatigue crack growth (Region II) with an increase in $\Delta$K. The resistance of fatigue crack growth at low temperature is higher compared with that at room temperature, which is attributed to the extent of plasticity-induced by compressive residual stress according to the cyclic loads. Fractographic examinations reveal that the differences of the fatigue crack growth characteristics between room and low temperatures are explained mainly by the crack closure and the strengthening due to the plasticity near the crack tip and roughness of the crack faces induced.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.70-82
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• 2014

A nano-power CMOS voltage reference is proposed in this paper. Through a combination of switched-capacitor technology with the body effect in MOSFETs, the output voltage is defined as the difference between two gate-source voltages using only a single PMOS transistor operated in the subthreshold region, which has low sensitivity to the temperature and supply voltage. A low output, which breaks the threshold restriction, is produced without any subdivision of the components, and flexible trimming capability can be achieved with a composite transistor, such that the chip area is saved. The chip is implemented in $0.18{\mu}m$ standard CMOS technology. Measurements show that the output voltage is approximately 123.3 mV, the temperature coefficient is $17.6ppm/^{\circ}C$, and the line sensitivity is 0.15 %/V. When the supply voltage is 1 V, the supply current is less than 90 nA at room temperature. The area occupation is approximately $0.03mm^2$.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.3
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• pp.279-284
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• 2014

This paper proposes a novel OLED pixel circuit to compensate the threshold voltage variation of p-channel low temperature polycrystalline silicon thin-film transistors (LTPS TFTs). The proposed 5-TFT OLED pixel circuit consists of 4 switching TFTs, 1 OLED driving TFT and 1 capacitor. One frame of the proposed pixel circuit is divided into initialization period, threshold voltage sensing and data programming period, data holding period and emission period. SmartSpice simulation results show that the maximum error rate of OLED current is -4.06% when the threshold voltage of driving TFT varies by ${\pm}0.25V$ and that of OLED current is 9.74% when the threshold voltage of driving TFT varies by ${\pm}0.50V$. Thus, the proposed 5T1C pixel circuit can realize uniform OLED current with high immunity to the threshold voltage variation of p-channel poly-Si TFT.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.26 no.9
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• pp.434-440
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• 2014

Experiments were performed to verify if performance and characteristic curves obtained from the temperature differential defrosting method, where surface temperature is measured to judge defrosting condition, can be reproduced by the photoelectric technology where defrosting condition is judged by photoelectric sensors. The output voltage of a phototransistor and heating capacity, power consumption, and surface temperature of the outdoor heat exchanger are compared. The results showed that the photoelectric sensors can be used as a defrost control device. On-off control timings in temperature differential defrosting method are in good agreement with those predicted by the high and low threshold output voltages of the photoelectric sensor.