• Title/Summary/Keyword: Low temperature phase

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Investigation of Seasonal Characteristics of Contaminants and Hydrochemical Factors in an Aquifer for Application of In Situ Reactive Zone Technology (원위치 반응존 공법 적용을 위한 대수층내 오염물질 및 환경영향인자의 계절 특성 평가)

  • Ahn, Jun-Young;Kim, Cheolyong;Kim, Tae Yoo;Jun, Seong-Chun;Hwang, Inseong
    • Journal of Soil and Groundwater Environment
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    • v.21 no.6
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    • pp.192-203
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    • 2016
  • A field investigation was conducted on an aquifer contaminated with trichloroethylene (TCE) for application of in situ reactive zone treatment using nanosized zero-valent iron (NZVI). The aquifer was an unconfined aquifer with a mean hydraulic conductivity of $5.14{\times}10^{-4}cm/sec$, which would be favorable for NZVI injection. Seasonal monitoring of TCE concentration revealed a presence of non-aqueous phase liquid form of TCE near IW (injection well). The hydrochemical data characterized the site groundwater to be a $Ca-HCO_3$ type. The average value of Langelier Saturation Index of the groundwater was -1.33, which implied that the site was favorable for corrosion of NZVI. Dissolved oxygen (DO) concentration varied between 2.5~11.5 mg/L, which indicated that DO would greatly compete with TCE as an electron acceptor. The hydrogeological and hydrochemical characterization reveals that the time around November would be appropriate for NZVI injection when water level and temperature are relatively high and DO concentration is low.

Cold Shock Response of Leuconostoc mesenteroides SY1 Isolated from Kimchi

  • KIM JONG HWAN;PARK JAE-YONG;JEONG SEON-JU;CHUN JIYEON;KIM JEONG HWAN
    • Journal of Microbiology and Biotechnology
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    • v.15 no.4
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    • pp.831-837
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    • 2005
  • Low-temperature adaptation and cryoprotection were studied in Leuconostoc mesenteroides SYl, a strain isolated from Kimchi. L. mesenteroides SY1 cells grown in exponential growth phase at $30^{\circ}C$ were exposed to $15^{\circ}C,\;10^{\circ}C$, and $5^{\circ}C$ for 2, 4, and 6 h, respectively, and then frozen at $- 70^{\circ}C$ for 24 h. Survival ratio was measured after the cells were thawed. The freezing-thawing cycles were repeated four times. Preadapted cells survived better than non-adapted control cells, and the highest survival ratio ($96\%$) was observed for cells preadapted for 2 h at $5^{\circ}C$, whereas control cells showed only $22\%$. The 2D gel showed that two proteins (spots A and B) were induced in cells preadapted at lower temperatures. Spots A and B have the same molecular weight (7 kDa), but the pI was 4.6 for spot A and 4.3 for spot B. The first 29 and 15 amino acid sequences from spots A and B were determined, and they were identical, except for one amino acid. A csp gene was cloned, and nucleotide sequencing confirmed that the gene encoded spot A cold shock protein.

Cold Adaptation of Lactobacillus paraplantarum C7 Isolated from Kimchi

  • Kim, Su-Jung;Kim, Jong-Hwan;Park, Jae-Yong;Kim, Han-Taek;Jeong, Seon-Ju;Ha, Yeong-Lae;Yun, Han-Dae;Kim, Jeong-Hwan
    • Journal of Microbiology and Biotechnology
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    • v.14 no.5
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    • pp.1071-1074
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    • 2004
  • The effect of preadaptation at low temperature on cryoprotection was studied for Lactobacillus paraplantarum C7, a bacteriocin producer isolated from kimchi. L paraplantarum C7 cells in their log growth phase were incubated at $15^\circ{C}$, $10^\circ{C}$, or $5^\circ{C}$ for 2, 4, and 6 h, respectively, before being frozen at $-70^\circ{C}$. After 24 h of freezing, viable cells were counted after brief thawing. The freezing-thawing cycles were repeated three more times. Cells preadapted at $10^\circ{C}$ or $5^\circ{C}$ before freezing survived better than control cells, but preadaptation at $15^\circ{C}$ did not confer cryoprotection. Chloramphenicol addition did not destroy the cryoprotection, indicating that protein synthesis was not required for the development of cryoprotection. SDS-PAGE showed induction of a 6.5-kDa protein, a major cold-shock protein, in preadapted cells.

Homoepitaxial Growth on GaN Substrate Grown by HVPE (HVPE법에 의해 성장된 GaN 기판의 Homoepitaxial 성장)

  • Kim, Chong-Don;Kim, Young-Soo;Ko, Jung-Eun;Kwon, So-Young;Lee, Sung-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.14-14
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    • 2006
  • Homoepitaxial growth of GaN on n-type GaN substrates was carried out by hydride vapor phase epitaxy (HVPE) method. This enables us to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch. As a result, the two opposite crystal surfaces have been found to possess low dislocation density. The surface polarity of the homoepitaxially grown GaN was confirmed by both etching of the surface and conversion beam electron diffraction(CBED). The surface morphology and the photoluminescencemeasurement indicated that the surface properties of N-polar face of the homoepitaxlally grown GaN are quite different from the initial N-polar face of the heteroepitaxially grown GaN substrate Also, both surfaces of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD) and photoluminescence measurement.

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Properties of Freestanding GaN Prepared by HVPE Using a Sapphire as Substrate (사파이어를 기판으로 이용하여 HVPE법으로 제작한 Freestanding GaN의 특성)

  • Lee, Yeong-Ju;Kim, Seon-Tae
    • Korean Journal of Materials Research
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    • v.8 no.7
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    • pp.591-595
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    • 1998
  • In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE) and its some properties were investigated. The GaN substrate, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 100$\textrm{mm}^2$ area, were obtained by HVPE growth of thick film GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of $C_o$= 5.18486 $\AA$ and a FWHM of DCXRD was 650 arcsec for the single crystalline GaN substrate. The low temperature PL spectrum consist of three excitonic emission and a deep D- A pair recombination at 1.8eV. The Raman E, (high) mode frequency was 567$cm^{-1}$ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283$cm^3$<\ulcornerTEX>/ V.sand 1.1$\times$$10^{18}cm^{-3}$, respectively.

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Low Temperature Synthesis of BaCeO3 Nano Powders by the Citrate Process (Citrate Process를 이용한 BaCeO3 나노 분말의 저온 합성)

  • Lee, Dong-Wook;Won, Jong-Han;Joo, Kyoung;Kim, Chang-Yeoul;Shim, Kwang-Bo
    • Journal of the Korean Ceramic Society
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    • v.39 no.6
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    • pp.604-609
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    • 2002
  • Nanosized $BaCeO_3$ powders with the stoichiometric composition of a molecular level were synthesized by the citrate process based on the Pechini method. Polymeric precursor was formed by use of citric acid and ethylen glycol, as chelating agent of metal ions and reaction medium, respectively. Single phase orthorhombic structured $BaCeO_3$powders, about 100 nm sized and uniform shaped were obtained through the calcination of the polymeric precursor at $900^{\circ}C$ for 4 h. Extremely small quantities of carbonate ions($CO_^{2-}$) were completely decomposed at over $1100^{\circ}C$. The mean size of the powders was increased twice, however, it has very uniform distribution in its size and shape.

A Study on the N2O Separation Process from Crude N2O (Crude N2O로부터 정제된 N2O 분리공정에 관한 연구)

  • Cho, Jungho;Lee, Taekhong;Park, Jongki
    • Korean Chemical Engineering Research
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    • v.43 no.4
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    • pp.467-473
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    • 2005
  • Liquid phase nitrous oxide ($N_2O$) contains air, carbon monoxide, water, carbon dioxide and NOx as main impurities. It is known to be very dangerous to obtain a very pure $N_2O$ product by using solidification at low temperature. In this study a new method to obtain a high purity of $N_2O$ product based on a continuous distillation process was introduced. For the modeling of the continuous distillation process to obtain a product having a purity over 99.999% of $N_2O$ stream, Intalox wire gauze packing- No. SCH-80S gauze packing column was used. Peng-Robinson equation of state was used for the modeling of the continuous distillation process and refrigeration system. Computational results performed in this work showed a good agreement with Aspen Plus simulation results.

Fabrication of nonequilibrium alloy powders in immiscible Cu-Nb system by mechanical alloying (기계적 합금화에 의한 비고용 Cu-Nb계 비평형 합금의 제조)

  • Lee, Chung-Hyo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.5
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    • pp.210-215
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    • 2006
  • Mechanical alloying (MA) by high energy ball mill of pure copper and niobium powders was carried out under the Ar gas atmosphere. The supersaturated solid solution can be produced in the range up to $Cu_xNb_{100-x}$(x=5-30) by MA for 120 hrs, as demonstrated by X-ray diffraction, DSC analysis and the electronic studies through a change in the superconducting transition in the low-temperature specific heat. The $Cu_{30}Nb_{70}$ samples ball-milled for 120 hrs exhibit only a broad exothermic heat release. The total energy, ${\Delta}H_t$ accumulated during MA far the mixture of $Cu_{30}Nb_{70}$ powders increased with milling time and approached the saturation value of 7.5 kJ/mol after 120 h of milling. It can be seen that the free energy difference between the supersaturated solid solution and the mixture of $Cu_{30}Nb_{70}$ powders is estimated to be 7 kJ/mol by Miedema et al. Hence it is thermodynamically possible to assume the formation of a supersaturated solid solution phase in this system.

Piezoelectric and Dielectric Characteristics of Low Temperature Sintering Pb(Mn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(Zr1/2Ti1/2)O3 Ceramics according toPb(Ni1/3Nb2/3)O3 Substitution (Pb(Ni1/3Nb2/3)O3 치환에 따른 저온소결 Pb(Mn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(Zr1/2Ti1/2)O3 세라믹스의 압전 및 유전 특성)

  • Yoo Ju-Hyun;Lee Sang-Ho;Paik Dong-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.1
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    • pp.35-39
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    • 2006
  • In this study, in order to develop the multilayer piezoelectric actuator and ultrasonic resonator, PMN-PNN-PZT ceramics were fabricated by sintering with $Li_2CO_3-Na_2CO_3$ as sintering aids at $950^{\circ}C$ and their piezoelectric and dielectric characteristics were investigated as a function of PNN substitution. With increasing PNN substitution, dielectric constant(${\epsilon}_r$), electromechanical coupling factor(kp), and piezoelectric d constant($d_{33}$) were increased to $12 mol\%$ PNN substitution and then showed a tendency to decrease rapidly With increasing PNN substitution, crystal structure changed from tetragonal to rhombohedral at $12 mol\%$ PNN substitution and then secondary phase was appeared and its intensity was increased. At the $12 mol\%$ PNN substituted PMN-PZT composition ceramic sintered at $950^{\circ}C$, density, kp, $d_{33}$ and Qm showed the optimum value of $7.79 g/cm^3$, 0.599, 419 pC/N, and 894, respectively for multilayer piezoelectric actuator application.

Sintering Characteristics of ZnO Fabricated by Spark Plasma Sintering Process for High Temperature Thermoelectric Materials Application (고온용 ZnO계 열전 재료의 방전플라즈마 소결 특성 및 미세구조)

  • 심광보;김경훈;홍영호;채재홍
    • Journal of the Korean Ceramic Society
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    • v.40 no.6
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    • pp.560-565
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    • 2003
  • M-doped (M=Al, Ni) ZnO thermoelectric materials were fully densified at low temperatures of 800∼1,000$^{\circ}C$ and their sintering characteristics and microstructural features were investigated. Electron microscopic analysis showed that the addition of NiO promoted tile formation of solid solution and caused actively grain growth. The addition of A1$_2$O$_3$ prevented the evaporation of pure ZnO at grain boundaries and suppressed the grain growth by the formation of secondary phase. In case of the addition of A1$_2$O$_3$ together with NiO, the specimen showed an excellent microstructure and also the SEM-EBSP (Electron Back-scattered Diffraction Pattern) analysis confirmed that it shows a superior grain boundary distribution to the others specimens. These microstructural characteristics induced by the addition of A1$_2$O$_3$ together with NiO may increase the electrical conductivity by the increase in carrier concentration and decrease the thermal conductivity by the phonon scattering effect and, consequently, improve the thermoelectric property.