• Structural Engineering and Mechanics
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• 제83권5호
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• pp.693-707
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• 2022

Bonded joints have proven their performance against conventional joining processes such as welding, riveting and bolting. The single-lap joint is the most widely used to characterize adhesive joints in tensile-shear loadings. However, the high stress concentrations in the adhesive joint due to the non-linearity of the applied loads generate a bending moment in the joint, resulting in high stresses at the adhesive edges. Geometric optimization of the bonded joint to reduce this high stress concentration prompted various researchers to perform geometric modifications of the adhesive and adherends at their free edges. Modifying both edges of the adhesive (spew) and the adherends (bevel) has proven to be an effective solution to reduce stresses at both edges and improve stress transfer at the inner part of the adhesive layer. The majority of research aimed at improving the geometry of the plate and adhesive edges has not considered the effect of temperature and water absorption in evaluating the strength of the joint. The objective of this work is to analyze, by the finite element method, the stress distribution in an adhesive joint between two 2024-T3 aluminum plates. The effects of the adhesive fillet and adherend bevel on the bonded joint stresses were taken into account. On the other hand, degradation of the mechanical properties of the adhesive following its exposure to moisture and temperature was found. The results clearly showed that the modification of the edges of the adhesive and of the bonding agent have an important role in the durability of the bond. Although the modification of the adhesive and bonding edges significantly improves the joint strength, the simultaneous exposure of the joint to temperature and moisture generates high stress concentrations in the adhesive joint that, in most cases, can easily reach the failure point of the material even at low applied stresses.

• 한국재료학회지
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• 제33권11호
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• pp.439-446
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• 2023

Changes in the microstructure and mechanical properties of as-roll-bonded AA6061/AA5052/AA1050 three-layered sheet with increasing annealing temperature were investigated in detail. The commercial AA6061, AA5052 and AA1050 sheets with 2 mm thickness were roll-bonded by multi-pass rolling at ambient temperature. The roll-bonded Al sheets were then annealed for 1 h at various temperatures from 200 to 400 ℃. The specimens annealed up to 250 ℃ showed a typical deformation structure where the grains are elongated in the rolling direction in all regions. However, after annealing at 300 ℃, while AA6061 and AA1050 regions still retained the deformation structure, but AA5052 region changed into complete recrystallization. For all the annealed materials, the fraction of high angle grain boundaries was lower than that of low angle grain boundaries. In addition, while the rolling texture of the {110}<112> and {123}<634> components strongly developed in the AA6061 and AA1050 regions, in the AA5052 region the recrystallization texture of the {100}<001> component developed. After annealing at 350 ℃ the recrystallization texture developed in all regions. The as-rolled material exhibited a relatively high tensile strength of 282 MPa and elongation of 18 %. However, the tensile strength decreased and the elongation increased gradually with the increase in annealing temperature. The changes in mechanical properties with increasing annealing temperature were compared with those of other three-layered Al sheets fabricated in previous studies.

• 한국결정성장학회지
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• 제27권1호
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• pp.34-41
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• 2017

본 연구는 아연결정 Willemite($Zn_2SiO_4$)유의 합성에서 소성 전의 전처리 과정이 결정의 결합반응에 미치는 영향을 규명하고자 한다. 시료 전처리 방법으로 원료의 체거름과 초음파분산실험을 통해서 실험 분석하였다. 그 결과, 기본유시료의 체거름과 초음파분산은 물리적 공정만으로 Zn-Si 결합이 용이하도록 Si 본딩에 변화를 가져와 저온($680^{\circ}C$)에서부터 willemite의 생성을 촉진시켰다. 원료의 분산은 체거름 만으로도 willemite의 저온 생성을 촉진시키는 것으로 나타났으며 특히 초음파 분산 실험의 결과는 willemite생성의 저온 반응에 효과가 더욱 극명하게 나타났다. 이러한 비 소성 전 처리 공정에 의한 결정생성은 경제적으로도 큰 가치가 있을 것으로 판단된다.

• 한국재료학회지
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• 제22권8호
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• pp.403-408
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• 2012

A sample of ultra low carbon IF steel was processed by six-layer stack accumulative roll-bonding (ARB) and annealed. The ARB was conducted at ambient temperature after deforming the as-received material to a thickness of 0.5 mm by 50% cold rolling. The ARB was performed for a six-layer stacked, i.e. a 3 mm thick sheet, up to 3 cycles (an equivalent strain of ~7.0). In each ARB cycle, the stacked sheets were, first, deformed to 1.5 mm thickness by 50% rolling and then reduced to 0.5 mm thickness, as the starting thickness, by multi-pass rolling without lubrication. The specimen after 3 cycles was then annealed for 0.5 h at various temperatures ranging from 673 to 973 K. The microstructural evolution with the annealing temperature for the 3-cycle ARB processed IF steel was investigated in detail by transmission electron microscopy observation. The ARB processed IF steel exhibited mainly a dislocation cell lamella structure with relatively high dislocation density in which the subgrains were partially observed. The selected area diffraction (SAD) patterns suggested that the misorientation between neighboring cells or subgrains was very small. The thickness of the grains increased in a gradual way up to 873 K, but above 898 K it increased drastically. As a result, the grains came to have an equiaxed morphology at 898 K, in which the width and the thickness of the grains were almost identical. The grain growth occurred actively at temperatures above 923 K.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.236-236
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• 2011

Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.356-356
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• 2007

Plasma immersion ion beam deposition (PIIBD) technique is a cost-effective process for the deposition of diamond like carbon thin film, the possible solid lubricant on large surface and a complex shape. We used PIIB process for the preparation of DLC thin film on $Al_2O_3$ with deposition conditions of deposition temperature range $200^{\circ}C$, working gas pressure of 1.310-1Pa. DLC thin films were coated by $C_2H_2$ ion beam deposition on $Al_2O_3$ after the ion bombardment of SiH4 as the bonding layer. Energetic bombardment of $C_2H_2$ ions during the DLC deposition to ceramic materials generated mixed layers at the DLC-Si interface which enhanced the interface to be highly bonded. Wear test showed that the low coefficient of friction of around 0.05 with normal load 2.9N and proved the advantage of the low energy ion bombardment in PIIBD process which improved the tribological properties of DLC thin film coated alumina ceramic. Furthermore, PIIBD was recognized as a useful surface modification technique for the deposition of DLC thin film on the irregular shape components, such as molds, and for the improvement of wear and adhesion problems of the DLC thin film, high temperature solid lubricant.

• 한국산학기술학회논문지
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• 제20권4호
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• pp.503-509
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• 2019

더욱 작고 얇고 빠르며, 많은 기능을 가진 모바일 기기에 대한 요구가 그 어느 때보다 높다. 이에 대한 기술적 대응의 하나로 여러 개의 칩을 적층하는 Stacked Chip Scale Package(SCSP)가 어셈블리 업계에서 사용되고 있다. 다수의 칩을 접착하는 유기접착제로는 필름형 접착제인 die attach film(DAF)가 사용된다. 칩과 유기기판의 접착의 경우, DAF가 기판의 단차를 채우기 위해서는 고온에서 높은 유동성이 요구된다. 또한 와이어 사이를 채우면서 고용량 메모리와 같이 동일한 크기의 칩을 접착하는 DAF의 경우에도, 본딩 온도에서 높은 유동성이 요구된다. 본 연구에서는 DAF의 주요 원재료 3성분에 대한 혼합물 설계 실험계획법을 통하여 고온에서 낮은 탄성계수를 갖도록 최적화하고, 이에 따른 점착 특성 및 경화 특성을 평가하였다. 3성분은 아크릴 고분자(SG-P3)와 연화점이 다른 두 개의 고상에폭시 수지(YD011과 YDCN500-1P)이다. 실험계획법 평가 결과에 따르면, 고온에서는 아크릴 고분자 SG-P3의 함량이 작을수록 탄성계수가 작은 값을 나타내었다. $100^{\circ}C$에서의 탄성계수는 SG-P3의 함량이 20% 감소한 경우, 1.0 MPa에서 0.2 MPa 수준으로 감소하였다. 반면, 상온에서의 탄성계수는 연화점이 높은 에폭시 YD011에 의해 크게 좌우되었다. 최적 처방은 UV 다이싱 테이프를 적용시 98.4% 수준의 비교적 양호한 다이픽업 성능을 나타냈다. 유리칩을 실리콘 기판에 부착하고 에폭시를 1단계 경화시킨 경우, 크랙이 발생하였으나, 아민 경화 촉진제의 함량 증가와 2단계 경화를 통하여 크랙의 발생을 최소화할 수 있었다. 이미다졸계 촉진제가 아민계 촉진제에 비해 효과가 우수하였다.

• 한국전기전자재료학회논문지
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• 제26권11호
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• pp.816-820
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• 2013

We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying $NH_3/N_2O$ mixing ratio and a fixed $SiH_4$ flow rate. The deposition temperature was held at $150^{\circ}C$ which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher $NH_3$ fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from $8{\times}10^{-9}$ to $9{\times}10^{-11}(A/cm^2$ at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable $NH_3/N_2O$ mixing ratio.

• 한국진공학회지
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• 제7권2호
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• pp.150-154
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• 1998

실리콘산화막에 실리콘이온주입을 $5\times1016/\textrm{cm}^2, 1\times10^{17}/\textrm{cm}^2, 3\times10^{17}/\textrm{cm}^2$으로 하여 열처리온도와 열처리시간을 변화시키면서 광루미니센스, XRD, TEM을 관찰하였다. 이온주 입량이 적고 열처리온도가 낮을경우에 가시광 광루미니센스를 관찰할 수 있었다. 광루미니 센스의 peak는 7420$\AA$과 8360$\AA$위치에 있었으며, 열처리시간이 길어짐에 따라 intensity는 각각 증가하였다. 이온주입량이 많고 열처리온도가 높을경우에는 광루미니센스가 관찰되지 않았다. 이온주입량이 적고 열처리 온도가 높을경우에는 열처리시간이 짧으면 가시광 광루 미니센스가 있으나 열처리시간이 1시간 이상으로 길어지면 광루미니센스가 사라졌다. XRD 와 TEM결과로부터 실리콘 cluster는 nonradiative defect와 관련있으며, 실리콘이온주입된 실리콘산화막에서 관찰되는 광루미니센스의 origin은 nanocrystal이 아니라 defect임을 알 수 있었다. 이온주입되는 실리콘이온의 량, 열처리온도와 시간의 변화는 광루미니센스를 변 화시키는데 이 현상들을 Si-O-O결합인 O위주의 결함과 Si-Si-O결합인 Si위주의 결함과 연 관지어 설명할 수 있었다.

• 대한치과교정학회지
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• 제22권1호
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• pp.43-65
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• 1992

Bonding orthodontic adhesive resins to glazed porcelain surface is not attainable. The aim of this investigation was to examine, in vitro, the effect of three methods of porcelain surface pretreatment on the shear bond strength of orthodontic adhesives, and to compare the shear strength of orthodontic bracket bonding to porcelain surface by the best results that to human enamel. Porcelain disks ($Ceramco^{(TM)}$ and $Vita^{(TM)}$) baked in the laboratory were roughened by sandpapers, #320, #600, #800, #1000 and #1200, and were pretreated with silane and dried at the various temperatures, room temperature, $50^{\circ}C$, $70^{\circ}C$ and $90^{\circ}C$, and were etched by 3% hydrofluoric acid solution for 1, 3, 5, 7, and 9 minutes, orthodontic adhesives (System $1+^{(TM)}$ and $Unite^{(TM)}$) were applied on them, and shear bond strengths were measured by Instron. The best results of pretreatment of each method were determined by the shear bond strengths. Again, porcelain disks were pretreated by the determined best results and human enamel were etched by 37% hydrofluoric acid solution, orthodontic brackets were bonded on them by the orthodontic adhesives, and the shear bond strengths were measured and compared between them. 1. Roughening porcelain surfaces with coarse sandpaper (#300) showed higher shear bond strength than that with finer sandpapers, but it $(22.44Kgf/cm^2)$ was distinguishably low compared to that from etched human enamel $(144.11Kgf/cm^2)$. 2. There were disparities in shear bond strengths upon the orthodontic resins, which was presumably related to the contents of fillers in orthodontic adhesive resins. Also there were disparities in shear bond strength upon the porcelains which had different composition. 3. Silane enhanced the shear bond strength of orthodontic resins to porcelain surfaces ($25.20Kgf/cm^2$ at $50^{\circ}C$), which was markedly low compared to that from etched human enamel. 4. Etched porcelain surface with 3% hydrofluoric acid solution for 1 to 9 minutes showed no difference in shear bonding strength of orthodontic adhesive resins. Shear bond strength from etched porcelain $(97.43-120.72Kgf/cm^2)$ were as high as clinically available, but low compared to that from etched human enamel. 5. Roughening with #300 sandpaper and etching by 3% hydrofluoric acid followed silane application on porcelain surface showed lower shear bond strength than etched human enamel, but were as high as clinically useful. 6. The results suggest that etching porcelain surface by 3% hydrofluoric acid solution might provide comparatively high shear bond strength as much as clinically favorable.