• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.17-24
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• 2012

Recently, flip chip interconnection has been increasingly used in microelectronic assemblies. The common Flip chip interconnection is formed by reflow of the solder bumps. Lead-Tin solders and Tin-based solders are most widely used for the solder bump materials. However, the flip chip interconnection using these solder materials cannot be applied to temperature-sensitive components since solder reflow is performed at relatively high temperature. Therefore the development of low temperature bonding technologies is required in these applications. A few bonding techniques at low temperature of $150^{\circ}C$ or below have been reported. They include the reflow soldering using low melting point solder bumps, the transient liquid phase bonding by inter-diffusion between two solders, and the bonding using low temperature curable adhesive. This paper reviews various low temperature bonding methods.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.253-257
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• 2003

The low temperature flip chip technique is applied to the package of the temperature-sensitive devices for LCD systems and image sensors since the high temperature process degrades the polymer materials in their devices. We will introduce the various low temperature flip chip bonding techniques; a conventional flip chip technique using eutectic Bi-Sn (mp: $138^{\circ}C$) or eutectic In-Ag (mp: $141^{\circ}C$) solders, a direct bump-to-bump bonding technique using solder bumps, and a low temperature bonding technique using low temperature solder pads.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.29-33
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• 2010

As the demands for the higher data transmission speed and capacity as well as integration density grow throughout the network, much works have being done in order to integrate the Electrical PCB with Optical PCB. However, one of the most troublesome problems in the commercial bonding process is to need the high temperature for the bonding. Due to the high temperature bonding process, lots of side problems are followed such as warpage and crack, etc. In this paper, we tried to develop the new bonding technology with low temperature around $100^{\circ}C$. As a result of this study, the PCB bonding technology with high bonding strength is demonstrated with the value of bonding strength from 7 to 8 MPa at the temperature of $100^{\circ}C$.

• Journal of Welding and Joining
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• v.23 no.6
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• pp.77-86
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• 2005

Low temperature bonding of the silicon and glass using the Spin-on Glass (SOG) has been conducted experimentally to figure out the effects of the SOG solution composition and process variables on bond strength using the Design of Experiment method. In order to achieve the high quality bond interface without rack, sufficient reaction time of the optimal SOG solution composition is needed along with proper pressure and annealing temperature. The shear strength under the optimal SOG solution composition and process condition was higher than that of conventional anodic bonding and similar to that of wafer direct bonding.

• Journal of Welding and Joining
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• v.18 no.4
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• pp.96-103
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• 2000

This study investigated the effects of bonding temperature and bonding atmosphere on high temperature mechanical properties of transient liquid phase(TLP) bonded joints of heat resistant alloy using MBF-50 insert metal. Specimens were bonded at 1,423~1,468K for 600s. Microconstituents of {TEX}$Cr_{7}(C,B)_{3}${/TEX}were formed in the bonded region when the bonding temperature was low. The amount of microcostituents in the bonded layer decreased with increasing the bonding temperature, and the microconstituents in the bonded layer disappeared at the bonding temperature above 1,468K. The tensile strength of the joints at elevated temperatures increased with the increase the bonding temperature and was the same level as one of the base metal in the bonding temperature over 1,453K. Microstructure and alloying element distributions of the bonded region bonded in Ar and $N_2$atmosphere were similar to those of the bonded in vacuum. The creep rupture strength and rupture lives of joints were almost identical to those of base metal.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.1-4
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• 2015

In this study, we analyzed the correlation between mechanical and electrical properties of low-temperature conductive film (LT-CF) bonded silicon solar cells by a quadrant analysis (horizontal axis (peeling strength), vertical axis (power loss)). We found that a series of points with various bonding parameters such as bonding temperature, pressure and time were distributed in the different three regimes; weak regime (Q2: weak bonding strength and high power loss), moderate regime (Q4 : strong bonding strength and low power loss) and hard regime (Q3 : weak bonding strength and low power loss). Using this analogous technique, it was possible to fabricate the LT-CF bonded silicon solar cells with the various conditions displayed in Q3 of the quadrant plots, possessing the peeling strength of ~ 1N/mm and power loss of 2~3%.

• Fashion & Textile Research Journal
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• v.11 no.3
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• pp.474-480
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• 2009

The purpose of this study is to prepare the hardness of polyester(PET) fabric by thermal bonding with low melting component of bicomponent fiber and to describe the change of physical properties of thermal bonded PET fabrics. The PET fabrics were prepared with regular PET fiber as warp and bicomponent fiber as weft. The bicomponent fiber of sheath-core type were composed with a regular PET core and low melting PET sheath. The thermal bonding of PET fabric was carried out in pin tenter from 120 to $195^{\circ}C$ temperature range for 60 seconds. In this study, we investigated the physical properties and melting behavior of PET fiber and the effect of the temperature of the pin tenter on the thermal bonding, mechanical properties. Melting peak of warp showed the thermal behavior of general PET fiber. However, melting peak of weft fiber(bicomponent fiber) showed the double melting peak. The thermal bonding of the PET fabric formed at about temperature of lower melting peak. The optimum thermal bonding conditions for PET fabrics was applied at $190{\sim}195^{\circ}C$ for 60seconds by pin tenter. On the other hand, the tensile strength of the PET fabric decreased with an increasing temperature of thermal bonding.

• ETRI Journal
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• v.38 no.6
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• pp.1163-1171
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• 2016

Integration technologies involving flexible substrates are receiving significant attention owing the appearance of new products regarding wearable and Internet of Things technologies. There has been a continuous demand from the industry for a reliable bonding method applicable to a low-temperature process and flexible substrates. Up to now, however, an anisotropic conductive film (ACF) has been predominantly used in applications involving flexible substrates; we therefore suggest low-temperature lead-free soldering and bonding processes as a possible alternative for flex-on-flex applications. Test vehicles were designed on polyimide flexible substrates (FPCBs) to measure the contact resistances. Solder bumping was carried out using a solder-on-pad process with Solder Bump Maker based on Sn58Bi for low-temperature applications. In addition, thermocompression bonding of FPCBs was successfully demonstrated within the temperature of $150^{\circ}C$ using a newly developed fluxing underfill material with fluxing and curing capabilities at low temperature. The same FPCBs were bonded using commercially available ACFs in order to compare the joint properties with those of a joint formed using solder and an underfill. Both of the interconnections formed with Sn58Bi and ACF were examined through a contact resistance measurement, an $85^{\circ}C$ and 85% reliability test, and an SEM cross-sectional analysis.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.99-105
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• 2006

This paper reports an improved bonding method using the IPA (isopropyl alcohol) assisted low-temperature bonding process for the PMMA (polymethylmethacrylate) micro CE (capillary electrophoresis) chip. There is a problem about channel deformations during the conventional processes such as thermal bonding and solvent bonding methods. The bonding test using an IPA showed good results without channel deformations over 4 inch PMMA wafer at $60^{\circ}C$ and 1.3 bar for 10 minutes. The mechanism of IPA bonding was attributed to the formation of a small amount of vaporized acetone made from the oxidized IPA which allows to solvent bonding. To verify the usefulness of the IPA assisted low-temperature bonding process, the PMMA micro CE chip which had a $45{\mu}m$ channel height was fabricated by hot embossing process. A functional test of the fabricated CE chip was demonstrated by the separation of fluorescein and dichlorofluorescein. Any leakage of liquids was not observed during the test and the electropherogram result was successfully achieved. An IPA assisted low-temperature bonding process could be an easy and effective way to fabricate the PMMA micro CE chip and would help to increase the yield.

• Journal of Korea Foundry Society
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• v.8 no.4
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• pp.429-436
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• 1988

The influences of some casting conditions on bonding ratio and state at bonding zone of stainless steel-cast iron dual tube produced by centrifugal casting process were investigated to estimate fabrication technics. 1) Bonding ratio is increasing such as increasing of inner surface temperature of outer metal(stainless steel STS 304), if pouring temperature of inner metal (cast iron) is constant. 2) The more pouring temperature of inner metal (cast iron) increase, the more bonding ratio increase when inner surface temperature of outer metal (cast iron) is constant. 3) As the mold rotary speed is increase, the hatching area of bonding map (perfect bonding area) goes down to the low pouring temperature of inner metal. 4) In order to predict bonding state of two different metal, we are able to make and use the bonding map about casting conditions such as inner surface temperature of outer metal, pouring temperature of inner metal and mold rotary speed.