• 대한전자공학회논문지TC
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• 제40권12호
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• pp.136-144
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• 2003

본 논문은 Offset time을 기반으로 하는 OBS에서 하위 우선순위 클래스의 버스트 크기를 망의 트래픽 부하에 따라 동적으로 조절하여 하위 우선순위 클래스의 손실율을 제어시킬 수 있는 방안을 제안한다. 이 방안에서는 void를 활용하는 스케줄링에서는 부하가 증가함에 따라 긴 버스트의 손실율이 짧은 버스트의 손실율 보다 높아지므로, 부하가 높아 질 때에는 버스트의 길이를 짧게 함으로써, 채널의 void/gap을 보다 효율적으로 활용하여 클래스간의 버스트 충돌을 감소시킬 수 있다는 사실을 이용한다. 이 방안의 구현을 위해서 먼저 버스트의 길이와 버스트 loss율 그리고 트래픽 부하에 대한 상관관계를 구하여, 코어 라우터에서는 망의 부하에 따라 유지하고자하는 버스트 손실율에 상응하는 burst 길이를 Ingress 에지 라우터(edge router)에 주기적 혹은 필요에 따라 피드백 해준다. 에지 라우터는 피드백 받은 정보에 따라 어셈블리 때에 Burst Assembly Threshold를 조정하여 버스트 길이를 제한하게 된다. 시뮬레이션 결과를 통하여 제안한 방안이 하위 우선 순위 버스트들의 손실율을 망이 요구하는 수준으로 잘 유지 할 수 있음을 확인 할 수 있었다.

• 전력전자학회논문지
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• 제6권6호
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• pp.564-571
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• 2001

본 논문은 휴대용 기기를 위한 고효율의 저전압용 DC/DC 컨버터의 고집적회로에 관한 연구이다. 컨버터의 모든 능동 소자들은 0.65$\mu\textrm{m}$표준 CMOS 공정을 사용하여 단일 칩으로 구현하였다 수종 소자들의 크기를 줄이기 위해서 1MHz의 주파수에서 동작하며 높은 주파수에서 의스위칭 손실을 최소화하기 위하여 ZVS 방식으로 설계하였다. 시뮬레이션 결과 출력 전압이 2V일때 1W의 출력을 가지며 full 부하에서 95%의 효율을 보였다.

• 수산해양교육연구
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• 제9권2호
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• pp.209-221
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• 1997

This paper presents a soft switching unity power factor PWM rectifier, which features reduced conduction losses and soft switching with no auxiliary switches. The soft switching are achieved by using a simple commutation circuit with no auxiliary switches, and reduced conduction loses are achieved by employing a single converter, instead of a typical front end diode rectifier followed by a boost rectifier. Furthermore, thanks to good features such as simple PWM control at constant frequency, low switch stress and low VAR rating of commutation circuits, it is suitable for high power applications. The principle of operation is explained in detail, and major characteristics analysis and experimental results of the new converter also included.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2019년도 전력전자학술대회
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• pp.139-141
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• 2019

Capacitive power transfer has an advantage in the simplicity of the energy link structure. So, the conventional phase -shift full bridge sometime is not always the best choice because of its complexity and high cost. On the other hand, the link capacitance is usually very low and requires high-frequency operation, but, the series resonant converter loses zero-voltage switching feature in the light load condition, which makes the switching loss high especially in CPT system. The paper proposes a new low-cost topology based on asymmetric half-bridge to achieve simplicity as well as wide zero voltage switching range. The design procedure is presented, and circuit operations are analyzed and verified by simulation.

• ETRI Journal
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• 제39권6호
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• pp.866-873
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• 2017

We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At $175^{\circ}C$, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current ($I_{RM}$), reverse recovery time ($T_{rr}$), and reverse recovery charge ($Q_{rr}$) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to $300A/{\mu}s$.

• Journal of Power Electronics
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• 제11권2호
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• pp.188-193
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• 2011

A highly efficient AC-DC converter for small wind power generation systems using a brushless DC generator (BLDCG) is presented in this paper. The market standard AC-DC converter for a BLDCG consists of a three-phase diode rectifier and a boost DC-DC converter, which has an IGBT and a fast recovery diode (FRD). This kind of two-stage solution basically suffers from a large amount of conduction loss and the efficiency greatly decreases under a light load, or at a low current, because of the switching devices with a P-N junction. In order to overcome this low efficiency, especially at a low current, a three-phase bridgcless converter consisting of three upper side FRDs and three lower side Super Junction FETs is presented. In the overall operating speed region, including the cut-in speed, the efficiency of the proposed converter is improved by up to 99%. Such a remarkable result is validated and compared with conventional solutions by calculating the power loss based on I-V curves and the switching loss data of the adopted commercial switches and the current waveforms obtained through PSIM simulations.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2005년도 전력전자학술대회 논문집
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• pp.549-551
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• 2005

Bidirectional DC/DC converters allows transfer of power between two dc sources, in either direction. Due to their ability to reverse the direction of flow of power, they are being increasingly used in many applications such as battery charger/dischargers, dc uninterruptible power supplies, electrical vehicle motor drives, aerospace power systems, telecom power supplies, etc. This paper proposes a new bidirectional Sepic/zeta converter. It has low swicthing loss and low conduction loss due to auxiliary communicated circuit and synchronous rectifier operation, respectively. Because of positive and buck/boost-like DC voltage transfer function(M=D/1-D), the proposed converter is very desirable for use in distributed power system . The proposed converter also has both transformerless version and transformer one.

• 전력전자학회논문지
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• 제25권3호
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• pp.204-212
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• 2020

In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.

• 전기학회논문지
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• 제62권1호
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• pp.90-94
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• 2013

A low loss power dividing switch in a indoor microwave power distribution system is proposed and designed with a various power dividing ratio. Switching characteristics are analyzed by use of the S-parameter of the switch. Newly proposed switch showed a very low return loss less than -30dB at the operating frequency of 2.45GHz. Three kinds of the switch in which we take out individually 1/2, 1/3 and 1/4 of the input power were fabricated, and measured the delivered, transmitted, and return loss power ratio. Simulated results showed that the lower power ratio is, the better accurate operating performance shows. This switch can switch the input power from 4.5% to 58% with the variance of 5% output power. The experimental results are in good agreement with the simulation within the return loss of 1%.

• 전기전자학회논문지
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• 제20권4호
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• pp.373-377
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• 2016

열전 변환 에너지 하베스팅을 위한 저 전력 부스트 컨버터에 사용하는 새로운 Zero Current Sensor (ZCS)를 이 논문에서 제안한다.새로 제안하는 ZCS를 사용하는 Zero Current Switching은 기존 방식인 아날로그 비교기를 사용한 Zero Current Switching방식 보다 파워 측면에서 큰 장점을 보이고 기존의 다른 방식인 딜레이 라인을 이용하는 Zero Current Switching 방식보다 면적에서 큰 장점을 보인다. 새로운 ZCS는 기존의 아날로그 비교기에 고의적으로 offset을 발생시키고 offset의 양을 digital code로 calibration 하여 출력이 나오는 시간을 조절한다. 새로운 ZCS를 이용한 Zero Current Switching은 기존의 아날로그 비교기를 이용한 Zero Current Switching 보다 대략 10배정도 적은 파워를 사용하면서 같은 성능을 보인다.