• Korean Journal of Materials Research
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• v.34 no.3
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• pp.152-162
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• 2024

In this study, we introduce a novel TiN/Ag embedded TiO₂/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (V_o). The current-voltage (I-V) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1822-1824
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• 1996

Damage and upset of control and communication equipment due to transient overvoltages which occur due primarily to internal switching surge and external lightning surge are an important problems in electromagnetic compatibility(EMC). In this paper, we analyzed operation characteristic of metal oxide varistor widely used low voltage AC line using the electromagnetic transients program(EMTP) and compare it with experimental results and also, we modeled combination generator producing $1.2/50{\mu}s$ open circuit voltage and $8/20{\mu}s$ short circuit current as a source which is critical in calculating operation characteristic. Simulation results showed that most of Transient energy consumes at MOV located in service entrance side than load side, and it showed similar to experimental results. Therefore, entrance side MOV should be selected more energy capacity than that of load side MOV.

• Journal of Power Electronics
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• v.12 no.3
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• pp.458-467
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• 2012

Single phase converters suffer from ripple power pulsating at twice the line frequency. The ripple power is usually absorbed by a bulky capacitor bank and/or a dedicative LC resonant link, resulting in a low power density and a high cost. An alternative solution is using a dc link active power filter (APF) to direct the pulsating power into another energy-storage component. The main dc link filter capacitor can then be reduced substantially. Based on a mainstream dc APF topology, this paper proposed a new control strategy incorporating both dual-loop control and repetitive control. The circuit parameter design is also re-examined from a control point of view. The proposed APF scheme has better control performance, and is more suited for high power applications since it works in CCM and with a low switching frequency.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1959-1961
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• 2002

Requirements for high-efficiency equipment for energy saving are rapidly increasing recently keeping pace with development of digital and semiconductor technology. Accordingly, there are many changes and development in ballast. Ballast currently in use are Magnetic ballast (Coiled Type) and Electronic ballast. Electronic ballast produces incredible energy saving effect, but falls short of confidence instead. In addition, use at higher frequency through switching device creates Electromagnetic Interference (EMI) and high frequency. EMI creates low quality of equipment, damage in facilities and low productivity by leading miss operation of equipment, and interferes with surrounding machines. In this analysis I am going to examine characteristics of EMI on the Electronic ballast of FLR32SS one type pursuant to annex 3 of Electric Goods Technology Standard, and counter technology.

• Journal of Power Electronics
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• v.15 no.3
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• pp.806-818
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• 2015

Based on the inherent relationship between dc-bus voltage and grid feeding active power, two dc-bus voltage regulators with different references are adopted for a grid-connected PV inverter operating in both normal grid voltage mode and low grid voltage mode. In the proposed scheme, an additional dc-bus voltage regulator paralleled with maximum power point tracking controller is used to guarantee the reliability of the low voltage ride-through (LVRT) of the inverter. Unlike conventional LVRT strategies, the proposed strategy does not require detecting grid voltage sag fault in terms of realizing LVRT. Moreover, the developed method does not have switching operations. The proposed technique can also enhance the stability of a power system in case of varying environmental conditions during a low grid voltage period. The operation principle of the presented LVRT control strategy is presented in detail, together with the design guidelines for the key parameters. Finally, a 3 kW prototype is built to validate the feasibility of the proposed LVRT strategy.

• Journal of Power Electronics
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• v.15 no.5
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• pp.1207-1216
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• 2015

In order to suppress the low frequency oscillation of the neutral-point voltage for three-level inverters, this paper proposes a new discontinuous pulse width modulation (DPWM) control method. The conventional sinusoidal pulse width modulation (SPWM) control has no effect on balancing the neutral-point voltage. Based on the basic control principle of DPWM, the relationship between the reference space voltage vector and the neutral-point current is analyzed. The proposed method suppresses the low frequency oscillation of the neutral-point voltage by keeping the switches of a certain phase no switching in one carrier cycle. So the operating time of the positive and negative small vectors is equal. Comparing with the conventional SPWM control method, the proposed DPWM control method suppresses the low frequency oscillation of the neutral-point voltage, decreases the output waveform harmonics, and increases both the output waveform quality and the system efficiency. An experiment has been realized by a neutral-point clamped (NPC) three-level inverter prototype based on STM32F407-CPLD. The experimental results verify the correctness of the theoretical analysis and the effectiveness of the proposed DPWM method.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.51-56
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• 1999

This paper presents a new transient overvoltage blocking device (TOBD) for info-communication facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, thehybrid type TOBD, which consists of a gas tube, avalanche diodes and junction typefield effect transistors (JFETs), was designed and fabricated. The TOBD differs from the conventional protection devices in configuration, and JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche dilde with low energy capacity are protected fromthe high current, and the TOBD has a very small input capacitance. From the performance test using combination surge generator, which can produce $1.2/50\mus\;4.2kV_{max}\; 8/20\mus\; 2.1kA_{max}$, it is confirmed that proposed TOBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.

• Journal of Applied Reliability
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• v.16 no.1
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• pp.1-6
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• 2016

Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

• Journal of Advanced Marine Engineering and Technology
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• v.23 no.2
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• pp.159-167
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• 1999

This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.