• Title/Summary/Keyword: Low Temperature Shift

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Enzymatic hydrolysis of insoluble silk sericin by Alcalase

  • Jung, Hye-Young;Bae, Do-Gyu
    • Journal of Sericultural and Entomological Science
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    • v.42 no.1
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    • pp.48-57
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    • 2000
  • This study was undertaken to figure out the effects of hydrolysis conditions on the solubility of insoluble sericin, molecular weight distribution and thermal characteristics of hydrolysates in enzymatic hydrolysis by Alcalase 2.5L. It was indicated that the optimum treatment temperature and pH for the insoluble sericin were 50$\^{C}$ and 11, respectively. When the insoluble sericin was hydrolyzed with a various treatment conditions, the solubility of all hydrolysates were represented above 85% at given conditions. As the enzyme concentration increased, the solubility increased roughly, but the solubility increasement ratio was less above 2% enzyme concentration. As the treatment time increased, the solubility was also increased. It was showed in the molecular weight distribution of hydrolysates treated various enzyme concentrations and treatment times that when enzyme concentrations were 0.5, 2, 3%, the peaks of the distribution curve were shifted to left side which meant low molecular weight and was distributed much quantity with shifted to be left side, but treatment time was 6 hr. the peak was shifted to right side. When enzyme concentration was 5% and treatment time was below 2 hr., the peaks were shifted to right side, but treatment time was above 4hr. the peak was shifted to left side. The number-average molecular weights were distributed from 300 to 800 and those were decreased when treatment time was up to 4 hr., but increased a little when treatment time was 6hr. It was showed in the DSC curves of hydrolysates treated with treatment time of 0.5, 1, 2, 4, 6 hr. fixed 1% o.w.s enzyme concentration and control that the endothermic peak was observed near at 200$\^{C}$. The denaturation peak of the hydrolysates depending on treatment times had a tendency to shift to higher temperature. But, when the treatment time was 6 hr., the peak was shifted to lower temperature comparing another hydrolysates.

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DSC Analysis on Water State of Salvia Hydrogels

  • Yudianti, Rike;Karina, Myrtha;Sakamoto, Masahiro;Azuma, Jun-Ichi
    • Macromolecular Research
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    • v.17 no.12
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    • pp.1015-1020
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    • 2009
  • The role of the water structure present in hydrogels from nutlets of three species of salvias, S. miltiorrhiza (SM), S. sclarea (SS) and S. viridis (SV), was analyzed by differential scanning calorimetry (DSC). The sharp endothermic peaks that appeared at $5.9^{\circ}C$ (SM), $2.8^{\circ}C$ DC (SS) and $1.8^{\circ}C$ (SV) in each 1.0% hydrogel of 10.4-15.8% were not affected by addition of 0.1 M urea and alkali-metal salts. The order-disorder portions in the network were slightly affected by the distribution of freezable and non-freezable water in the hydrogel networks. The SV hydrogel was further used to investigate the effects of additives (0.1-8.0 M urea and 0.1-5.0 M NaCl) on its melting behavior. At 0.5-4.0 M urea and 1.0-3.0 M NaCl, two endothermic peaks appeared, corresponding to unbound (high temperature) and bound (low temperature) water in the gel networks, and eventually merged into one endothermic peak at 5.0-8.0 M urea and 4.0-4.5 M NaCl. After this merger, the endothermic peak shifted to 3.7, 4.0 and $5.6^{\circ}C$ at 5.0, 6.0 and 8.0 M urea, respectively. In the case of NaCl, a combination of peaks that occurred at 4.0-4.5 M were accompanied by a shift to lower temperature (-14.4 and $15.3^{\circ}C$) and the endothermic peak finally disappeared at 5.0 M NaCl due to the strong binding of water in the gel networks.

Impact of Change in Monsoonal Circulation Due to SST Warming on the North East Asian Monsoon: A Model Analysis Using Satellite Based Sub-Grid Hydrometeors

  • Bhattacharya, Anwesa;Park, Rae Seol;Kwon, Young Cheol
    • Asia-Pacific Journal of Atmospheric Sciences
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    • v.54 no.4
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    • pp.545-561
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    • 2018
  • Over the North East Asia, extreme anomalous precipitation were observed in 2013 and 2014. During 2013 summer the precipitation was found to be higher (two standard deviation) than the climatological mean of the region; whereas during 2014, which was a borderline El Ni?o year, precipitation was found to be lower (one standard deviation). To understand the differences of these two anomalous years the Global/Regional Integrated Model system (GRIMs) has been used. The study found that low landsurface temperature and high sea-surface temperature over ocean caused a smaller land-sea contrast of surface temperature between East Asia and North West Pacific Ocean in 2014, which could have caused an eastward shift of mean monsoon circulation in that year compared to the circulation in 2013. Due to a change in the lower level circulation and wind field over East Asia the evaporation and moisture transport patterns became very different in those two years. In 2013, this study found high latent heat flux over Eastern China, which implies an increased surface evaporation over that region, and the moisture transported to the north by the mean monsoon circulation; whereas, there was no correlated transport of moisture to the North East Asia during 2014. The precipitable water over North East Asia has a stronger correlation with the latent heat flux over southern land region than that from Ocean region in the eastern side in both the years. A new approach is proposed to estimate the sub-grid scale hydrometeors from GRIMs, overestimated in the existing model.

p-type CuI Thin-Film Transistors through Chemical Vapor Deposition Process (Chemical Vapor Deposition 공정으로 제작한 CuI p-type 박막 트랜지스터)

  • Seungmin Lee;Seong Cheol Jang;Ji-Min Park;Soon-Gil Yoon;Hyun-Suk Kim
    • Korean Journal of Materials Research
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    • v.33 no.11
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    • pp.491-496
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    • 2023
  • As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

Properties of CaO added MgO Sintering at High Pressure and Low Temperatures (CaO 첨가된 MgO의 고압 저온 소결 조건에 따른 물성연구)

  • Song, Jeongho;Song, Ohsung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.9
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    • pp.4185-4190
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    • 2013
  • We executed the property changes of the sintered MgO (99.9% purity, 300nm size) specimens with addition to CaO content of 0.00wt%, 0.25wt%, and 0.50wt%, processed at 7GPa, for 5min, 600~$800^{\circ}C$. To investigate the micro-structure and physical property changes of the sintered MgO(-CaO), we employed a scanning electron microscopy(SEM), X-ray diffractomerty(XRD), Vickers hardness, and density. The SEM result showed that MgO powder of 300nm size was changed into sintered structure of 520nm by high pressure and low temperature sintering, regardless of the CaO contents. According to the XRD analysis, no CaO phase observed, while MgO peaks shift indicated the existence of CaO in the MgO matrix. The Vickers hardness result showed that hardness of sintered MgO-CaO increased by 12% compared pure MgO under the same temperature conditions. It implied that we can obtain the same hardness with $100^{\circ}C$ lowered sintering temperatures by addition of CaO. The density results showed that it was possible to obtain density of 98%, which is 5% greater than that of pure MgO at low temperature of $600^{\circ}C$.

Balanced RF Duplexer with Low Interference Using Hybrid BAW Resonators for LTE Application

  • Shin, Jea-Shik;Song, Insang;Kim, Chul-Soo;Lee, Moon-Chul;Son, Sang Uk;Kim, Duck-Hwan;Park, Ho-Soo;Hwang, Sungwoo;Rieh, Jae-Sung
    • ETRI Journal
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    • v.36 no.2
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    • pp.317-320
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    • 2014
  • A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long-Term Evolution band-7 duplexer should be designed to prevent the co-existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice- and ladder-type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance-tounbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as $2.0mm{\times}1.6mm$. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to $-16.9ppm/^{\circ}C$.

A Study on Formation and Thermal Decomposition Kinetics of PU Elastomers by Dynamic DSC and TGA Analysis (Dynamic DSC 및 TGA 열분석을 이용한 PU Elastomer의 중합반응 및 열분해 반응 Kinetics에 관한 연구)

  • Yoon, Soo-Koong;Ahn, Won-Sool
    • Elastomers and Composites
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    • v.42 no.1
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    • pp.47-54
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    • 2007
  • Reaction kinetics of polyurethane elastomers (PU) were studied using dynamic DSC and TGA for three PU samples of general purpose (Sample A), high temperature cross-likable CASE purpose with MOCA (Sample B), and RT cross-likable CASE purpose grade (Sample C). From DSC results, sample with MOCA(Sample B) showed lower shift of peak temperature, while showing broader thermograms than those of general purpose grade (Sample A). On the other hand, RT cross-linkable PU grade (Sample C) showed an interesting double mode reaction patterns, i.e., a lower temperature reaction at about $70\;^{\circ}C$, and a higher temperature reaction in the range of $140{\sim}170\;^{\circ}C$, indicating that it requires 2-step reaction process in order to complete the reaction. Once the cross-linking reaction completed, however, TGA results showed that all the samples would be considered to have similar chemical structures, showing similar decomposition processes. Sample C, especially, had showed decomposition properties of both Sample A and Sample B. Formation activation energies calculated from Kissinger method showed 10.39, 65.85, 36.52(Low $T_p$) and 18.21(High $T_p$) kcal/mol, while decomposition activation energies were 31.94, 30.84, 24.16 kcal/mol, respectively.

Optical and Magnetic Properties of Copper Doped Zinc Oxide Nanofilms

  • Zhao, Shifeng;Bai, Yulong;Chen, Jieyu;Bai, Alima;Gao, Wei
    • Journal of Magnetics
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    • v.19 no.1
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    • pp.68-71
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    • 2014
  • Copper doped Zinc Oxide nanofilms were prepared using a simple and low cost wet chemical method. The microstructures, phase structure, Raman shift and optical absorption spectrum as well as magnetization were investigated for the nanofilms. Room temperature ferromagnetism has been observed for the nanofilms. Structural analyses indicated that the films possess wurtzite structure and there are no segregated clusters of impurity phase appreciating. The results show that the ferromagnetism in Copper doped Zinc Oxide nanofilms is driven either by a carrier or defect-mediated mechanism. The present work provides an evidence for the origin of ferromagnetism on Copper doped Zinc Oxide nanofilms.

Effect of Phenolic Resin According to Relative Humidity on Submerged Entry Nozzle with ZrO2-C System in Fabrication Process (ZrO2-C계 침지노즐 제조시 상대습도에 따른 바인더용 페놀수지의 영향)

  • Yoon, Sang-Hyeon;Kim, Jang-Hoon;Kim, Ju-Young;Lee, Hee-Soo;Koo, Young-Seok
    • Journal of the Korean Ceramic Society
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    • v.48 no.4
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    • pp.293-297
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    • 2011
  • The thermodynamic behavior of phenolic resin was investigated to verify the relation between the properties of porous ceramics with $ZrO_2$-C system for submerged entry nozzle and the characteristics of phenolic resin with various relative humidity. The green and the sintered density were decreased between 25% and 50% relative humidity, whereas they were gradually enhanced above 50% relative humidity. The highest value of apparent porosity was 20.1% and the minimum compressive strength was 69MPa in the specimen using the powder exposed to 50% relative humidity. As a result of thermal analysis for phenolic resin, the shift of endothermic peak to low temperature and the reduction of exothermic peak were observed, and the peaks corresponded to melting and curing of phenolic resin, respectively. The melting and the curing of phenolic resin generate the change of green density, and it can affect the properties of submerged entry nozzle.

Variation of electrical properties in solution processed SiInZnO thin film transistors (용액공정을 이용하여 제작된 SiInZnO 박막 트랜지스터의 전기적 특성 변화)

  • Park, Ki-Ho;Choi, Jun-Young;Chun, Yoon-Soo;Ju, Byeong-Kwon;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1453-1454
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    • 2011
  • We have investigated the effect of silicon contents (0~0.4 molar ratios) on the performance of solution processed silicon-indium-zinc oxide (SIZO) thin-film transistors (TFTs). Despites its solution processed channel layer, low annealed temperature below $200^{\circ}C$ in air has been used for SIZO-TFTs. The $V_{th}$ is shifted from -4.04 to 5.15 V as increasing Si ratio in the SIZO-TFTs. The positive shift of $V_{th}$ as increasing Si contents in SIZO system indicates that Si suppresses the carrier generation in the active channel layer since $V_{th}$ is defined as the voltage required accumulating sufficient charge carriers to form a conductive channel path.

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