• ETRI Journal
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• v.26 no.4
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

• Journal of Environmental Science International
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• v.25 no.6
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• pp.889-895
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• 2016

In Danseong-myeon (myeon is a subdivision of), Sancheong-gun, and Sugok-myeon, Jinju City, pot seedling culture was used at the rates of 100% and 62%, respectively. Root restriction seedling culture was used relatively more frequently than pot seedling culture in Yangchon-myeon, Nonsan City, Guryong-myeon, Buyeo-gun, and Wolsan-myeon, Damyang-gun. Open-field seedling culture was used at the rates of 80% and 54% in Samnangjin-eup (eup is a subdivision of a gun), Miryang City and Ssangnim-myeon, Goryeong-gun, respectively. In Danseong, Sancheong, and Sugok, Jinju, granite soil was used as the medium for pot seedling culture at the rates of 90% and 80%, respectively. In Yangchon, Nonsan, Wolsan, Damyang, and Ssangnim, Goryeong, commercial bed soil and coir dust were used for seedling culture at the rates of 73%, 64%, and 60%, respectively. At the main production sites, the use of granite soil for seedling culture, highest rate in 2000-2005, continued to decrease; in 2011-2013, granite soil was used at the rate of 37%, while commercial bed soil and coir dust were used at the rates of 32% and 14%, respectively. The bulk density of commercial bed soil, expanded rice hulls, and coir dust was $0.11-0.16g/cm^{-3}$. Coir dust was the lightest material but had the highest and, 36.7% and 21.8%, respectively. In sandy loam soil and granite soil was low. The pH of all growth media was between 5.4 and 7.0, and the values were in the range of $0.15-0.66dS{\cdot}m^{-1}$. However it was necessary, to adjust the pH levels and enhance the of expanded rice hulls, sandy loam soil, and granite soil. Similarly, the fertilizer concentration and air permeability of coir dust need to be adjusted.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1303-1305
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• 1998

In order to reduce or avoid oxidation problem at operation the interconnects in SOFCs have so far mostly been made of ceramic material. It has high chemical stability both under cathode and anode condition, relatively thermal expansion coefficient that matchs that of electrolyte material YSZ. But this material shown rather weak in the low oxygen atmosphere and thermal shock, and it has lower mechanical strength than alloys. To avoid these problems one may consider to use metals or alloys as materials for interconnects. Metallic interconnects are advantageous because of their high thermal and electronic conductivities. But it has some problems, Those are high thermal expansion and oxidation at high temperature in air. To solve these problems in the interconnection material in this study, $LaCrO_3$-dispersed Cr alloys for metallic interconnector of SOFC have been investigated as a fuction of $LaCrO_3$ content in the range of 5 to 25 vol.%. The Cr alloy were prepared by mixing Cr and $LaCrO_3$ powders in high-energy ball mill for 48h and by sintering under Ar atmosphere with 5vol.% $H_2$ for 10h at $1500^{\circ}C$. The alloys had a relative density of 95% and above. The Cr alloys in composed of two kind of small $LaCrO_3$ and large Cr particles. As the $LaCrO_3$ content increased, the Cr particle size decreased but the $LaCrO_3$ particle size remained contant. Also the oxidation tests show that the $LaCrO_3$-dispersed Cr is very resistant to oxidation in air. These results means that $LaCrO_3$-dispersed Cr is a useful material for metallic interconnect of planar SOFC.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.63-68
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• 2011

The investigation is directed to lead free (Pb-free) frits that can be used for organic light emitting diode, plasma display screen devices and other sealing materials. $P_2O_5$-SnO system glasses have been prepared for Pb-free low temperature glass frit. Structure and properties of the glasses with the composition SnO-$xB_2O_3-(60-x)P_2O_5$ (x=0, 5, 10, 15, 20, 25, 30, 35, 40 mol%) were characterized by infrared spectra (IR), X-ray diffraction(XRD), Density, Molar volume, Thermo mechanical analysis(TMA) and weight loss after immersion test. Glass transition temperature($T_g$), dilatometric softening temperature($T_d$) and chemical durability increased, and coefficient of thermal expansion($\alpha$) decrease with the substitution of $B_2O_3$ for $P_2O_5$ in the range of 0~25 mol%.

• Journal of Environmental Science International
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• v.20 no.12
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• pp.1521-1531
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• 2011

This study was carried out to determine the characteristics of the marine environment, including nutritional content, in order to clearly understand the outbreaks of Gonyaulax polygramma in the southern coastal areas in August, 2009. Samples were collected at 13 sites and water temperature and salinity were measured using a CTD. Field surveys were twice: the first between August 5-7, the second between August 22-24. The cell density of G. polygramma was 6,500-10,000 cells $ml^{-1}$ during the $1^{st}$ survey, whereas during the $2^{nd}$ survey the range of the cells was recorded from 8,000 to 12,500 cells $ml^{-1}$. Cochlodinium polykrikoides ranged from 0 to 105 cells $l^{-1}$ during the field survey. In water environments, the majority stations during the $1^{st}$ survey showed a nearly homogeneous water column below $1^{\circ}C$ in temperature, as well as similar profiles of salinity. However, the stratification between the surface and bottom was observed in the $2^{nd}$ survey. Regarding nutrients, Dissolved Inorganic Nitrogen (DIN) in the surface ranged from 0.144 to 0.236 mg $l^{-1}$ during the $1^{st}$ survey, and 0.082-0.228 mg $l^{-1}$ during the $2^{nd}$ survey. DIP (Dissolved Inorganic Phosphorus) did not show any difference in concentration between the $1^{st}$ and $2^{nd}$ survey. During August of 2009, the wind speed in the southern waters remained at around ${\leq}2\;m\;s^{-1}$ for about 60% of time, and there was very little precipitation during the month. Irradiance of ${\geq}10$ hr was shown in the late of August. It is thought that a low level of DIN and salinity play an important role as an essential factor for rapid growth, wide distribution and longer duration of red tide in G. polygramma.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.13-20
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• 2003

Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• Parasites, Hosts and Diseases
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• v.49 no.4
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• pp.365-371
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• 2011

In Nigeria, malaria causes up to 11% of maternal mortality. Our main aim was to find out the most common mosquito control measures employed by the pregnant women in Lagos and their effects on malaria infection. The study was carried out over a period of 6 months during which trained interviewers administered questionnaires to 400 pregnant women. The prevalence of malaria was 8.4%. There was no significant association between the prevalence of malaria and age, level of education, or occupation of the participants. Pregnant women in the age range 26-30 had the mean parasite density ($409.9{\pm}196.80$). Insecticide spray (32.8%), mosquito coil (27.5%), and insecticide-treated nets (ITN) (15.5%) were the major mosquito control measures employed by the participants while the prevalence of infection among them were 2.3%, 6.2%, and 3.2%, respectively (P<0.05). Only 18.3% of the women had taken more than one dose of intermittent preventive treatment (IPT), while another 11.8% had taken a single dose. The infection rate among them was 4.1% and 6.4%, respectively. Malaria prevalence was highest among those who had not received any dose of IPT (10%). This study showed that the use of ITN and IPT among the pregnant women were still unacceptably low. It also showed that the use of insecticide spray which was the most common malaria control measure adopted by the participants was effective despite the fact that it is not a National Malaria Control Policy. We recommend that a sustained integrated mosquito man-agement and public education should be strengthened in Nigeria.

• Geomechanics and Engineering
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• v.6 no.4
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• pp.359-376
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• 2014

Thermal conductivity of ground has a great influence on the performance of Ground Heat Exchangers (GHEs). In general, the ground thermal conductivity significantly depends on the density (or porosity) and the moisture content since they are decisive factors that determine the interface area between soil particles which is available for heat transfer. In this study, a large number of thermal conductivity experiments were conducted for soils of varying porosity and moisture content, and a database of thermal properties for the weathered granite soils was set up. Based on the database, a 3D Curved Surface Model and an Artificial Neural Network Model (ANNM) were proposed for estimating the thermal conductivity. The new models were validated by comparing predictions by the models with new thermal conductivity data, which had not been used in developing the models. As for the 3D CSM, the normalized average values of training and test data were 1.079 and 1.061 with variations of 0.158 and 0.148, respectively. The predictions became somewhat unreliable in a low range of thermal conductivity values in considering the distribution pattern. As for the ANNM, the 'Logsig-Tansig' transfer function combination with nine neurons gave the most accurate estimates. The normalized average values of training data and test data were 1.006 and 0.954 with variations of 0.026 and 0.098, respectively. It can be concluded that the ANNM gives much better results than the 3D CSM.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.