• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.13-21
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• 1999

Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.10
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• pp.88-95
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• 2006

Cold gas dynamic spray is a relatively new coating process by which coatings can be produced without significant heating during the process. Cold-spray uses supersonic gas flow to carry metallic powders to the substrate. Its low process temperature can minimize thermal stress and also reduce the deformation of the substrate. Most researches on cold-spray have focused on micro scale coating, but in this study macro scale deposition was conducted. Properties of aluminum layer by cold-spray deposition such as coefficient of thermal expansion (CTE), modulus of elasticity. hardness, and electric conductivity were measured. The results showed that properties of aluminum layer by cold-spray deposition were different from properties of pure aluminum and aluminum alloy.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.23-29
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• 2014

Less power consumption, lower cost, smaller size and more functionality are the increasing demands for consumer electronic devices. The three dimensional(3-D) TSV packaging technology is the potential solution to meet this requirement because it can supply short vertical interconnects and high input/output(I/O) counts. Cu(Copper) has usually been chosen to fill the TSV because of its high conductivity, low cost and good compatibility with the multilayer interconnects process. However, the CTE mismatch and Cu ion drift under thermal stress can raise reliability issues. This study discribe the thermal stress reliability trend for successful implementation of 3-D packaging.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.31-36
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• 2003

Recently, composite materials are widely used for nozzle, pressure vessel, skins of satellite and many structures under condition of high temperature due to good thermal characteristics such as low CTE, heat-resistance, etc. Fiber optic sensors, especially FBG(fiber Bragg grating) sensors, can be a good counterproposal of strain gages for the measurement of material properties of composites under high temperature. In this research, T700/Epoxy specimens with embedded FBG sensors were fabricated and tested at the Instron with thermal chamber from room temperature to $400^{\circ}C$. The effects of embedding optical fiber on material properties were also verified. And, the experimental results were discussed and analyzed by microphotographs of the composite specimen.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.795-798
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• 2002

Replacing Pb-free glass composition for the dielectric materials is expected in PDP industry. In this study, phosphate glasses, $P_2O_5$- ZnO- SnO (PZS), $P_2O_5$-ZnO-BaO (PZB) were selected for a new transparent dielectric. Thermal properties (Tg, CTE) were measured with differential thermal analyzer and thermal mechanical analyzer. The glass transition of the glasses was ranged at $365{\sim}405^{\circ}C$ for the PZS system and $5.9{\sim}9.5{\times}\;10^{-6}$ of thermal expansion were found. The PZB system showed $445{\sim}470^{\circ}C$ of glass transition. Thus, the glass compositions would be a potential candidate for a transparent dielectric layer in plasma display panel.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.04a
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• pp.250-253
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• 2004

Emphasis has been placed on thin plate fabrication of plain woven carbon fabric reinforced Al matrix composites using liquid pressing process. The composite has potential applications for PDP rear plate. The process is to use the low pressure for infiltration of Al melt into plain woven carbon fabric as the Al melt is pressurized directly. The minimum pressure required for the infiltration was calculated from force balance equation, permeability measurements and compaction behavior of carbon fiber. Also, the melting temperature and the holding time have been optimized. In order to measure coefficient of thermal expansion (CTE) of the composites, the thermal strain measurement using strain gage was performed and the thermal conductivity of the composites was measured using laser flash method. The constituent materials of the composite are PAN type carbon fibers as reinforcements and 6061 Al alloys as matrices.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.6
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• pp.159-162
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• 2007

Recently, Pb-free solder ball technology, which is getting more significant in miniaturization of electronic equipment, and resolution of recent environmental problems, is necessary to be developed. A plastic-core solder ball is much promising in those considerations. Plastic-core solder balls have the tendency to replace the usual metal-core solder ball from low material cost and superior mechanical properties. The thermal effects, however, are important in manufacturing process, such as deposing micro-sized metal thin film on the spherical polymer surface. Furthermore plastic-core solder balls are easy to be broken due to CTE and elastic coefficient of material property from heat transfer. We propose technical computational investigations for the manufacturing design and the reliability of plastic-core solder ball from thermal stress analysis.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.370-371
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• 2006

The particulate strengthened $Cu-MoSi_2$ composites were prepared by a PM process to develop novel copper based composites with reasonable strength, high thermal conductivity and low thermal expansion coefficient. Microstructure of the composites was investigated by SEM; the tensile strength, elongation, thermal conductivity and thermal expansion coefficient (CTE) of the composites were examined. A comparative analysis of mechanical and thermal properties of various Cu-matrix composites currently in use was given and the strengthening mechanisms for the $Cu-MoSi_2$ composites were discussed.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.4
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• pp.41-47
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• 2019

The advent of highly integrated, high-power electronics requires low a coefficient of thermal expansion performance to prevent delamination between the heat dissipation material and substrate. This paper reports a preliminary study on the manufacturing technology of gas reaction control composite material, focusing on the prediction of the thermal expansion coefficients of Al-AlN composite materials. We obtained numerical equivalent property values by using finite element analysis and compared the values with theoretical formulas. Al-AlN should become the optimal composite material when the proportion of the reinforcing phase is approximately 0.45.