• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.28-31
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• 2000

In this paper, the effects of La addition of PLZT(x/30/70) thin films Prepared by sol-gel method are investigated for NVFRAM application. The tetragonality (c/a), the grain size, and the surface roughness of PLZT thin films decrease with an increase of La concentration. As the La concentration increases, the dielectric constants at 10 kHz increase from 450 to 600, while the loss tangent decrease from 0.075 to 0.025. Also, the leakage current density at 100kV/cm decrease from 5.83$\times$10$^{-7}$ to 1.38$\times$10$^{-7}$ 4/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$170kV/cm, the remanent polarization and the coercive field of PLZT thin films with La concentration from 0 to 10㏖％ decrease from 20.8 to 10.5 $\mu$C/cm and from 54.48 to 32.12kV/cm, respectively. After a fatigue measurement by applying 10$^{9}$ square pulses with $\pm$5V, the remanent polarizations of PLZT thin films with 0 and 10㏖％ La concentration decrease about 64 and 42 ％ from initial state. In the results of retention measurement after 10$^{5}$ s, PLZT thin films with 0 to 10mo1％ La concentration show that the remanent polarization is decreased about 43％ and 9％ from initial state, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.179-179
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• 2009

This is for the electrical characterization by IDC pattern using BST$(Ba_{0.5}Sr_{0.5}TiO_3)$ thin film. BST materials had been chosen for high frequency applications due to it's high permitivity and tunability. The BST thin films have been deposited on $Al_2O_3$ Substrates by Nd-YAG pulsed laser deposition with a 355nm wavelength at $700\;^{\circ}C$. The post deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for 1 hours. The capacitance of IDC patterns have been measured from 1 to 10 GHz as a function of electric field ($\pm40$ KV/cm) at room temperature using inter-digital Au electrodes deposited on top of BST. The IDC patterns have three type of fingers number. For the 10 pairs finger was the best capacitance onto $Al_2O_3$ substrate. The capacitance was 0.9pF. Also Dielectric constant was been 351 at 100 mTorr and annealing temperature $750^{\circ}C$ for 1 hour. The loss tangent was been 0.00531.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.35-40
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• 2007

The new PEI(poly(epoxy-imide))-nano Silica film has been synthesized via in situ CS sol process, and the chemical bonding and microstructure of nano silica dispersed in resin were examined by FT-IR, TAG and SEM. The dielectric properties of these hybrid films over a given temperature and frequency ranges have been studied in a point of view of stable chemical bonding of nano Silica filler. The results from IR spectra and SEM photograph indicated that PEI-Silica hybrid film prepared with nano CS sol process has been synthesized in uniform and chemical bonding. The decrease property of dielectric constant with CS content, tangent loss consistent of given frequency and temperature has been explained in terms of the chain movement of polymer through chemical bonging and size effect of nano silica. The new PEI-CS sol hybrid film with such stable chemical and dielectric properties was expected to be used as a high functional coating application in ET, IT and electric power products.

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.100-102
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• 2014

$Ag(Ta,Nb)O_3$ materials have a perovskite structure with a low loss tangent. These materials have been widely researched for their applications as high-frequency, passive components. Also, $Ag(Ta,Nb)O_3$ materials have weak frequency dispersion with high dielectric permittivity which gives them enormous potential for use in electronic components, including the filters, and embedded capacitors. Therefore, our research will discuss the structural and electrical relaxation properties of $Ag(Ta_{0.8}Nb_{0.2})O_3$ ceramics for device applications. We will investigate using X-ray diffraction to understand their structural properties and will analyze voltage dependent leakage current and timedependent relaxation behavior to understand their material properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.251-254
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• 1998

The ($0.8BaTiO_3-0.1SrTiO_3-0.1MgTiO_3$)+$0.006Nb_2O_5$ ceramics were fabricated by conventional ceramic process. The dielectric property of specimen was investigated that the specimen was sintering temperature at 1,300C for 3hours and then annealed at $1,100^{\circ}C$ for 3hours in a atmosphere (air) to be painted on the surface with CuO paste. The results of the temperature and frequency are varied, the dielectric constant and loss tangent are unsuitable for BL capacitor. The dielectric constants were varied to be negative temperature coefficient(2.000-3,000) in the temperature range between -10 and $140^{\circ}C$, the dissipation factors (tan $\delta$) were some high(0.1-0.3). It was not grain insulation, in cause of the some difficult to be annealed temperature with CuO paste and fired atmosphere. But, we have some different annealing temperature and fired atmosphere, it will be suitable BL(Boundary Layer)capacitor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.331-336
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• 2004

Due to the outstanding insulating characteristics, Laminated Polypropylene paper (LPP) and Kraft paper have been used as ac power insulation for conventional cable. Recently, both of LPP and Kraft has been studied as main insulation fur high temperature superconducting (HTS) cable. Ifowever, studies on the use of LPP/Kraft paper for HTS cables are thinly scattered. In this paper, the comparison among LPP, Kraft and LPP/Kraft Samples impregnated with liquid nitrogen $(LN_2)$ on dielectric insulation characteristics was investigated. It was found from the experimental data that the breakdown strength becomes lower in the order LPP, Lpp/Kraft and Kraft but the lifetime indices n becomes lower in the order Kraft, LPP/Kraft, LPP. Moreover, partial discharge inception and dielectric loss tangent become lower in the order Kraft, LPP, LPP/Kraft.

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.33-36
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• 1986

The $PbTiO_3$is well known materials having remarkable ferroelectric piezoelectric and pyro-electric properties. Thin films of the lead titanite has been successfully fabricated by Chemical Vapor Deposition on the borosilicate glass and titanium substrate. The $PbTiO_3$ thin film deposited on the borosilicate glass using the $PbCl_2$, $TiCl_4$ dry oxygen and wet oxygen at different temperatures (50$0^{\circ}C$-$700^{\circ}C$) grows along the (001) preferred orientation. On the other hand the $PbTiO_3$ thin film deposited on the titanium substrate using the PbO grows along the (101) preferred orientation. Growth orientation of deposited $PbTiO_3$ depends on the reaction species irrespective of substrate materials. Maximum dielectic constant and loss tangent of the $PbTiO_3$ thin film deposited on the titanium substrate are about 90 and 0.02 respectively, . Deposition rates of $PbTiO_3$ deposited on the borosilicate glass and titanium substrate are 10-15 ${\mu}{\textrm}{m}$/hr. Titanium dioxide interlayer formed be-tween $PbTiO_3$ film and titanium substrate material, It improved the adhesion of the film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.31-31
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• 2008

고주파 잡음 발생과 고집적화 문제 해결을 위해 고용량 디커플링 캐패시터를 기판에 내장하는 연구가 활발히 진행되고 있다. 본 연구에서는 초고주파 환경에서 고용량 기판 내장형 디커플링 캐패시터로의 응용을 위해 $BaTiO_3$박막을 에어로졸 데포지션 법을 이용하여 12~0.2 ${\mu}m$의 두께로 제조하였고 그 유전특성을 조사하였다. 그결과, 1 MHz에서 permittivity가 70, loss tangent은 3% 이하였으며, capacitance density는 $1{\mu}m$의 두께에서 59 nF/$cm^2$이었다. 하지만, 박막의 두께가 $1{\mu}m$ 이하에서는 XRD를 통해 결정성이 확인 되었음에도 큰 누설전류로 인해 유전특성을 확인할 수 없었다. 이 누설전류의 발생 원인을 조사하기 위해 $BaTiO_3$박막의 표면의 미세구조를 SEM으로 관찰한 결과 여러 결함들이 확인되었으며, 또한 전극 직경의 크기를 1.5 mm에서 0.33 mm로 작게 변화시킴으로서 그 유전특성을 조사하여 박막의 불균일성과 박막화의 가능성을 확인하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.87-95
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• 1996

We have studied the effects of La concentration on the optical and electrical properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the optical and electrical properties are greatly affected by the La concentration. The refreactiv eindices of the films varied from 2.23 to 1.93 with varying La concentration in the range from 15 to 33 mol%. The dielectric constants of the films vary form 340 to 870 with varying La concentration in the range form 15 to 33 mol%. Hysteresis loop becomes slimmer with the increase of La concentration form 15 to 28mol% and little fatter again with the increase of La concentration form 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film shows the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100Hz, the dielectric constant and the loss tangent of PLT(28) thin films are 940 and 0.08 respectively. Its leakage current density at 1.5${\times}10^{5}$V/cm is 1${\times}10^{-6}A/cm^{2}$. The comparision between the simulated and the experimental curves for the switching transient characteristics shows that PLT (28) thin films behaves like normal dielectrics.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.195-198
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• 1999

A Bi$_4$Ti$_3$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM. The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG analysis. The BIT thin film deposited on Pt/Ta/SiO$_2$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100㎸/cm is 4.71$mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250㎸/cm, the remanent polarization (Pr) and the coercive field (Ec) are 5.92$mutextrm{A}$/$\textrm{cm}^2$ and 86.3㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.