• Progress in Superconductivity
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• v.7 no.2
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• pp.109-113
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• 2006

The Arithmetic Logic Unit (ALU) is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We have developed and tested an RSFQ multi-bit ALU constructed with half adder unit cells. To reduce the complexity of the ALU, We used half adder unit cells. The unit cells were constructed of one half adder and three de switches. The timing problem in the complex circuits has been a very important issue. We have calculated the delay time of all components in the circuit by using Josephson circuit simulation tools of XIC, $WRspice^{TM}$, and Julia. To make the circuit work faster, we used a forward clocking scheme. This required a careful design of timing between clock and data pulses in ALU. The designed ALU had limited operation functions of OR, AND, XOR, and ADD. It had a pipeline structure. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. For high-speed tests, we used an eye-diagram technique. Our 4-bit ALU operated correctly at up to 5 GHz clock frequency.

• KSCI Review
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• v.2 no.1
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• pp.121-129
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• 1995

Fault simulation of logic circuits is an important part of the test-generation process. It is used for the propose of generation fault dictionaries or for the verification of the adequacy of tests. In this paper, a backtrace fault simulation is proposed to test generation. This is consists of 3 part ; initialization phase for given circuit, backtrace fault simulation phase to find fault list and reevaluation phase to list event. The main idea of this algorithm is to retain a minimum fault list by cutting uncontrollable lines of path when a logic event occurs in backward tracing phases. And the simulator is revaluates a fault list associated with the output of an element only if logic event occurs at any of its inputs when a list event occurs at one of its primary inputs. It reguires a O(n) memory space complexity. where n is a number of signal lines for the given circuits. Several examples are given to illustrate the power of this algorithm.

• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.784-787
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• 1999

The 74LS49 and 74LS47 chips are MSI circuits and are used for decoding the BCD input and driving seven-segment displays. The logic of these chips are often used not only as component chips in the commercial digital systems, but are used as library components in fairly complicated ASIC designs. Thus, the understanding of the logic characteristics of these chips is beneficial for future applications. It was analyzed reversely that the design of these chips includes a special logic minimization technique, which neither documented nor reported. This paper is to analyze the function of the logic and the special minimization technique adapted in the design of 74LS49 and 74LS47 chips.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.206-219
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• 1996

This paper describes a data structure and evaluation algorithm to improve the perofmrances MOS logic-with-timing simulation in computation and accuracy. In order to efficiently simulate the logic and timing of driver-load networks, (1) a tree data structure to represent the mutual interconnection topology of switches and nodes in the driver-lod network, and (2) an algebraic modeling to efficiently deal with the new represetnation, (3) an evaluation algorithm to compute the linear resistive and capacitive behavior with the new modeling of driver-load networks are developed. The higher modeling presented here supports the structural and functional compatibility with the linear switch-level to simulate the logic-with-timing of digital MOS circuits at a mixed-level. This research attempts to integrate the new approach into the existing simulator RSIM, which yield a mixed-klevel logic-with-timing simulator MIXIM. The experimental results show that (1) MIXIM is a far superior to RSIM in computation speed and timing accuracy; and notably (2) th etiming simulation for driver-load netowrks produces the accuracy ranged within 17% with respect ot the analog simulator SPICE.

• Communications of the Korean Institute of Information Scientists and Engineers
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• v.5 no.2
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• pp.94-98
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• 1987

Multi-Valued(MV) sequential logic circuits are proposed which are free from HAZARD. In this paper, HAZARD is classified Function and Logic HAZARD, and MV switching function in which they are eliminated is described. Also, the basic MV memory elements which can be realized without HAZARD are presented, so that suggest the realizability in the large-scale MV logic system based on these elements.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.11
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• pp.3227-3233
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• 2009

A method for performing Boolean resubstitution is proposed. This method is efficiently implemented using division matrix. It begins by creating an algebraic division matrix from given two logic expressions. By introducing Boolean properties and adding literals into the algebraic division matrix, we make the Boolean division matrix. Using this extended division matrix, Boolean substituted expressions are found. Experimental results show the improvements in the literal counts over well-known logic synthesis tools for some benchmark circuits.

• ETRI Journal
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• v.32 no.1
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• pp.166-168
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• 2010

We investigate the possibility of using adiabatic logic as a countermeasure against differential power analysis (DPA) style attacks to make use of its energy efficiency. Like other dual-rail logics, adiabatic logic exhibits a current dependence on input data, which makes the system vulnerable to DPA. To resolve this issue, we propose a symmetric adiabatic logic in which the discharge paths are symmetric for data-independent parasitic capacitance, and the charges are shared between the output nodes and between the internal nodes, respectively, to prevent the circuit from depending on the previous input data.

• Journal of Korea Society of Industrial Information Systems
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• v.17 no.3
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• pp.27-34
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• 2012

This paper presents the impact of time dependent dielectric breakdown (TDDB, also called as gate oxide breakdown) failure on nanoscale digital CMOS Circuits. Recently, TDDB for ultra-thin gate oxides has been considered as one of the critical reliability issues which can lead to performance degradation or logic failures in nanoscale CMOS devices. Also, leakage power in the standby mode can be increased significantly. In this paper, TDDB aging effects on large CMOS digital circuits in the 45nm technology are analyzed. Simulation results show that TDDB effect on MOSFET circuits can result in more significant increase of power consumption compared to delay increase.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.423-429
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• 2013

A 6-Gb/s differential voltage mode driver is presented whose output impedance and pre-emphasis level can be controlled independently. The voltage mode driver consists of five binary-weighted slices each of which has four sub-drivers. The output impedance is controlled by the number of enabled slices while the pre-emphasis level is determined by how many sub-drivers in the enabled slices are driven by post-cursor input. A prototype transmitter with a voltage-mode driver implemented in a 65-nm CMOS logic process consumes 34.8-mW from a 1.2-V power supply and its pre-emphasized output signal shows 165-mVpp,diff and 0.56-UI eye opening at the end of a cable with 10-dB loss at 3-GHz.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.66-73
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• 1999

In this paper, the design of one-chip FED system integrated with driving circuits in reported on the basis of MOSFET controlled FEA (MCFEA). To integrate a MOSFET with a FEA efficiently, a new fabrication process is proposed. It is confirmed that the MOSFET with threshold voltage of about 2volts controls the FEA emission current up to 20 ${\mu}$A by applying driving voltage of 15 volts, which is enough current level to utilize the MCFEA as a pixel for FED. The drain breakdown voltage of the MOSFET is measured to be 70 volts, which is also high enough for 60 volt operation of FED. The circuits for row and column driver are designed stressing on saving area, reducing malfunction probability and consuming low power to maximize the merit of on-chip driving circuits. Dynamic logic concept and bootstrap capacitors are used to meet these requirements. By integrating the driving circuit with FEA, the number of external I/O lines can be less than 20, irrespectively of the number of pixels.