• Proceedings of the KIPE Conference
• /
• 2017.07a
• /
• pp.18-19
• /
• 2017

This paper shows the design of the high voltage capacitor charger which using a modified series parallel resonant converter. The used silicon carbide Metal-Oxide Semiconductor Field Effect Transistor (SiC MOSFET) is proper for the few hundred kHz of high switching frequency to overcome the bulk resonant inductor and snubber capacitors. Furthermore, to increase the amount of the charging current, three phase delta transformer is used as well as the secondary sides are connected in parallel. In this paper, the design procedure of the high voltage capacitor charger is suggested and the output power is verified by the experimental results with the rated resistor load.

• Journal of Power Electronics
• /
• v.10 no.4
• /
• pp.419-427
• /
• 2010

A parallel control strategy in capacity proportion frequency allocation mode for shunt active power filters (APFs) is proposed to overcome some of the difficulties in high power applications. To improve the compensation accuracy and overall system stability, an improved selective harmonic current control based on multiple synchronous rotating reference coordinates is presented in a single APF unit, which approximately implements zero steady-state error compensation. The combined decoupling strategy is proposed and theoretically analyzed to simplify selective harmonic current control. Improved selective harmonic current control forms the basis for multi-APF parallel operation. Therefore, a parallel control strategy is proposed to realize a proper optimization so that the APFs with a larger capacity compensate more harmonic current and the ones with a smaller capacity compensate less harmonic current, which is very practical for accurate harmonic current compensation and stable grid operation in high power applications. This is verified by experimental results. The total harmonic distortion (THD) is reduced from 29% to 2.7% for a typical uncontrolled rectifier load with a resistor and an inductor in a laboratory platform.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.7
• /
• pp.515-521
• /
• 2013

Magnetoelectric(ME) bulk composites with PZT-PNN-PZN/$Fe_2O_4$ were prepared by using a conventional ceramic methods and investigated on the ME voltage vs frequency of ac magnetic fields. We made the electric equivalent circuits by using the Maxwell-Wagner model and simulated the frequency dependence of ME voltage in low frequency region. ME devices were described by a series of two equivalent circuits of piezoelectric and magnetic, which have the relaxation time ${\tau}$ due to the interaction between ME device and load resistor. Equivalent circuit of piezoelectric material is independent of frequency. However ferrite magnetic materials have Debye absorption and dipolar dispersion, whose equivalent circuit is a function of frequency. Therefore we suggest the resistance in the equivalent circuit is proportion to $1+{\omega}^2{\tau}^2$ and the capacitance is in inverse proportion to $1+{\omega}^2{\tau}^2$ in the magnetic materials.

• The Journal of The Korea Institute of Intelligent Transport Systems
• /
• v.7 no.4
• /
• pp.86-96
• /
• 2008

In this paper, a new broadband rectenna is presented for the wireless transmission of microwave power. The new broadband rectenna element is based on a new printed monopole broadband antenna with size reduction using surface current distribution and a new broadband stub bandpass filter with suppression of second harmonics. A RF-to-DC conversion efficiency of 80% using a 270 ohm load resistor is obtain at 2.45 GHz. Also, a conversion efficiency of above 50 % is maintained from 1.8 GHz to 2.8 GHz.

• Smart Structures and Systems
• /
• v.7 no.5
• /
• pp.417-432
• /
• 2011

The present paper is devoted to vibration canceling and shape control of piezoelastic slender beams. Taking into account the presence of electric networks, an extended electromechanically coupled Bernoulli-Euler beam theory for passive piezoelectric composite structures is shortly introduced in the first part of our contribution. The second part of the paper deals with the concept of passive shape control of beams using shaped piezoelectric layers and tuned inductive networks. It is shown that an impedance matching and a shaping condition must be fulfilled in order to perfectly cancel vibrations due to an arbitrary harmonic load for a specific frequency. As a main result of the present paper, the correctness of the theory of passive shape control is demonstrated for a harmonically excited piezoelelastic cantilever by a finite element calculation based on one-dimensional Bernoulli-Euler beam elements, as well as by the commercial finite element code of ANSYS using three-dimensional solid elements. Finally, an outlook for the practical importance of the passive shape control concept is given: It is shown that harmonic vibrations of a beam with properly shaped layers according to the presented passive shape control theory, which are attached to an resistor-inductive circuit (RL-circuit), can be significantly reduced over a large frequency range compared to a beam with uniformly distributed piezoelectric layers.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.14 no.1
• /
• pp.81-86
• /
• 2019

This paper is concerned with a system design that enables a the plurality of switching mode power supplies to be supplied with larger power through a parallel connection. For this purpose, a shunt resistor is placed in series at the output of the constant voltage regulator and the output voltage is sensed and controlled using an arduino. In this paper, two constant-voltage regulators were used for the experiment, but it is possible to generalize for more boards. By using the method that controls the system, the sum of the currents delivered by the two systems to the load was found to be 96% of the current drawn from each board. In case of efficiency, 92.4% efficiency is achieved in the unit board and the efficiency in parallel connection is about 90%.

• ETRI Journal
• /
• v.45 no.1
• /
• pp.163-170
• /
• 2023

We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBRLD using a butt-joint coupling method. The fabricated chip shows a threshold current of approximately 8 mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.

• ETRI Journal
• /
• v.46 no.4
• /
• pp.708-715
• /
• 2024

We propose a 10-GHz 2 × 2 phased-array radio frequency (RF) receiver with an 8-bit linear phase and 15-dB gain control range using 65-nm complementary metal-oxide-semiconductor technology. An 8 × 8 phased-array receiver module is implemented using 16 2 × 2 RF phased-array integrated circuits. The receiver chip has four single-to-differential low-noise amplifier and gain-controlled phase-shifter (GCPS) channels, four channel combiners, and a 50-Ω driver. Using a novel complementary bias technique in a phase-shifting core circuit and an equivalent resistance-controlled resistor-inductor-capacitor load, the GCPS based on vector-sum structure increases the phase resolution with weighting-factor controllability, enabling the vector-sum phase-shifting circuit to require a low current and small area due to its small 1.2-V supply. The 2 × 2 phased-array RF receiver chip has a power gain of 21 dB per channel and a 5.7-dB maximum single-channel noise-figure gain. The chip shows 8-bit phase states with a 2.39° root mean-square (RMS) phase error and a 0.4-dB RMS gain error with a 15-dB gain control range for a 2.5° RMS phase error over the 10 to10.5-GHz band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.24 no.11
• /
• pp.1091-1097
• /
• 2013

This paper presents a rectifier with comparator using unbalanced body biasing in $0.11{\mu}m$ RF CMOS process. It is composed of MOSFETs and two comparators. The comparator is used to reduce reverse leakage current which occurs when the load voltage is higher than input voltage. For the comparator, unbalanced body biasing is devised. By using unbalanced body biasing, reference voltage for comparator changing from high state to low state is increased, and it reduces time interval for leakage current to flow. 13.56 MHz 2 Vpp signal is used for input and $1k{\Omega}$ resistor and 1 nF capacitor are used for output load for simulation and experimental environment. In simulation environment, voltage conversion efficiency(VCE) is 87.5 % and Power conversion efficiency(PCE) is 50 %. When the rectifier is measured, VCE shows 90.203 % and PCE shows 45 %.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.5
• /
• pp.422-426
• /
• 2011

Piezoelectric materials can be used to convert mechanical energy into electrical energy. In this study, we investigated the possibility of harvesting from mechanical vibration force using a high efficient piezoelectric material-polyvinylidene fluoride (PVDF). A piezoelectric energy harvesting system consists of rectifier, filter capacitor, resistance. The experiments were carried out with impacting force to PVDF film with the thickness of 1 ${\mu}m$. The output power was measured with change in the load resistance value from 100 ${\Omega}$ to 2.2 $M{\Omega}$. The highest power was obtained under optimization by selection of suitable resistive load and capacitance. A power of 0.3082 ${\mu}W/mm^2$ was generated at the external vibration force of 5 N (10 Hz) across a 1 $M{\Omega}$ optimal resistor. Also, the maximum power of 0.345 ${\mu}W/mm^2$ was generated at 22 ${\mu}F$ and 1 $M{\Omega}$. The developed system was expected at a solution to overcome the critical problem of making up small size energy harvester.