• 제목/요약/키워드: Lithography optical system

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패턴 분해능 및 초점심도 향상에 대한 사입사 조명 (Off-Axis Illumination)

  • 박정보;이성묵
    • 한국광학회지
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    • 제10권6호
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    • pp.453-461
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    • 1999
  • 본 연구에서는 파장 0.248$\mu$m의 KrF Eximer Laser를 광원으로 하고 NA가 0.65인 광학계를 사용하는 리소그래피 시스템에서, 환형(annular)조명과 4구(quadrupole)조명의 조건들을 바꾸어 가며 구현하고자 하는 패턴의 분해능과 초점심도 향상에 어떠한 영향을 주는지 알아보았다. 그 결과, 환형 조명에서는 원형 마스크와 광학적 근접효과를 보정하기 위해 보조 패턴을 삽입한 마스크의 경우, 최적의 분해능과 초점심도를 보이는 조명조건이 다름을 알 수 있었다. 또한, 사구 조명의 경우에는 일반적으로 사용되는 45$^{\circ}$위치의 X자형 배치를 주요 패턴의 방향에 따라 적절히 바꾸어 주면 분해능과 초점심도를 향상시킬 수 있음을 확인하였다.

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정밀장비의 진동허용규제치에 미치는 인자에 관한 연구 (A Study on the Effected Factor for Vibration Criteria of Sensitive Equipment)

  • 이홍기;장강석;김두훈;김사수
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 1998년도 춘계학술대회논문집; 용평리조트 타워콘도, 21-22 May 1998
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    • pp.302-307
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    • 1998
  • In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga and tera class semiconductor wafers. This high technology equipments require very strict environmental vibration standard, vibration criteria, in proportion to the accuracy of the manufacturing, inspecting devices. The vibration criteria of high sensitive equipment should be represented in the form of exactness and accuracy, because this is used as basic data for the design of building structure and structural dynamics of equipment. The study on the evaluation of the factors affecting the permissible vibration criteria is required to design the efficient isolation system of the semiconductor manufacturing of equipment. This paper deals with the properties of the effected factor for vibration criteria of high sensitive equipment.

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ArF 포토리소그라피공정을 위한 실리콘이 함유된 반사방지막코팅 (Silicon Containing Bottom Anti-Reflective Coating for ArF Photolithography)

  • 이준호;김형기;김명웅;임영택;박주현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.66-66
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    • 2006
  • Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).

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극소 광 조형기술을 이용한 3차원 구조물의 제작 (Fabrication of 3D structures using micro-stereolithography technology)

  • 이인환;조동우
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1997년도 추계학술대회 논문집
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    • pp.1080-1083
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    • 1997
  • Micro-stereolithography is a newly proposed technology as a means that can fabricate 3D micro-structures of free form. It makes a 3D structure by dividing the shape into many slices of relevant thickness along honzontal surfaces, hardening each layer of slice with a laser, and stacking them up to a des~red shape. Scale effect becomes important in this micro-fabrication process, d~fferently from the conventional stereolithography. To realize this micro-stereolithography technology, we developed an equipment using Ar+ laser, xyz stages, controllers and all the optic devices. Using the equipment, a number of micro-structures were successfully fabricated including a winecup of several tens of micrometers.

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Micro-imaging techniques for evaluation of plastic microfluidic chip

  • Kim, Jung-Kyung;Hyunwoo Bang;Lee, Yongku;Chanil Chung;Yoo, Jung-Yul;Yang, Sang-Sik;Kim, Jin-Seung;Park, Sekwang;Chang, Jun-Keun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권4호
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    • pp.239-247
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    • 2001
  • The Fluorescence-Activated Cell Sorter (FACS) is a well-established instrument used for identifying, enumerating, classifying and sorting cells by their physical and optical characteristics. For a miniaturized FACS device, a disposable plastic microchip has been developed which has a hydrodynamic focusing chamber using soft lithography. As the characteristics of the spatially confined sample stream have an effect on sample throughput, detection efficiency, and the accuracy of cell sorting, systematic fluid dynamic studies are required. Flow visualization is conducted with a laser scanning confocal microscopy (LSCM), and three-dimensional flow structure of the focused sample stream is reconstructed from 2D slices acquired at $1\mutextrm{m}$ intervals in depth. It was observed that the flow structure in the focusing chamber is skewed by unsymmetrical velocity profile arising from trapezoidal cross section of the microchannel. For a quantitative analysis of a microscopic flow structure, Confocal Micro-PIV system has been developed to evaluate the accelerated flow field in the focusing chamber. This study proposes a method which defines the depth of the measurement volume using a detection pinhole. The trajectories of red blood cells (RBCs) and their interactions with surrounding flow field in the squeezed sample stream are evaluated to find optimal shape of the focusing chamber and fluid manipulation scheme for stable cell transporting, efficient detection, and sorting

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대면적 UV 임프린팅 공정에서 잔류층 두께 예측 (Prediction of Residual Layer Thickness of Large-area UV Imprinting Process)

  • 김국원
    • 반도체디스플레이기술학회지
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    • 제12권2호
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    • pp.79-84
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    • 2013
  • Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Although one of the current major research trends of NIL is large-area patterning, the technical difficulties to keep the uniformity of the residual layer become severer as the imprinting area increases more and more. In this paper, with the rolling type imprinting process, a mold, placed upon the $2^{nd}$ generation TFT-LCD glass sized substrate($370{\times}470mm^2$), is rolled by a rubber roller to achieve a uniform residual layer. The prediction of residual layer thickness of the photoresist by rolling of the rubber roller is crucial to design the rolling type imprinting process, determine the rubber roller operation conditions-mpressing force & feeding speed, operate smoothly the following etching process, and so forth. First, using the elasticity theory of contact problem and the empirical equation of rubber hardness, the contact length between rubber roller and mold is calculated with consideration of the shape and hardness of rubber roller and the pressing force to rubber roller. Next, using the squeeze flow theory to photoresist flow, the residual layer thickness of the photoresist is calculated with information of the viscosity and initial layer thickness of photoresist, the shape of mold pattern, feeding speed of rubber roller, and the contact length between rubber roller and mold previously calculated. Last, the effects of rubber roller operation conditions, impressing force & feeding speed, on the residual layer thickness are analyzed with consideration of the shape and hardness of rubber roller.

Taguchi method-optimized roll nanoimprinted polarizer integration in high-brightness display

  • Lee, Dae-Young;Nam, Jung-Gun;Han, Kang-Soo;Yeo, Yun-Jong;Lee, Useung;Cho, Sang-Hwan;Ok, Jong G.
    • Advances in nano research
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    • 제13권2호
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    • pp.199-206
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    • 2022
  • We present the high-brightness large-area 10.1" in-cell polarizer display panel integrated with a wire grid polarizer (WGP) and metal reflector, from the initial design to final system development in a commercially feasible level. We have modeled and developed the WGP architecture integrated with the metal reflector in a single in-cell layer, to achieve excellent polarization efficiency as well as brightness enhancement through the light recycling effect. After the optimization of key experimental parameters via Taguchi method, the roll nanoimprint lithography employing a flexible large-area tiled mold has been utilized to create the 90 nm-pitch polymer resist pattern with the 54.1 nm linewidth and 5.1 nm residual layer thickness. The 90 nm-pitch Al gratings with the 51.4 nm linewidth and 2150 Å height have been successfully fabricated after subsequent etch process, providing the in-cell WGPs with high optical performance in the entire visible light regime. Finally we have integrated the WGP in a commercial 10.1" display device and demonstrated its actual operation, exhibiting 1.24 times enhancement of brightness compared to a conventional film polarizer-based one, with the contrast ratio of 1,004:1. Polarization efficiency and transmittance of the developed WGPs in an in-cell polarizer panel achieve 99.995 % and 42.3 %, respectively.

Immersion grating mount design of IGRINS

  • 문봉곤;;박찬;이성호;육인수;천문영
    • 천문학회보
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    • 제36권2호
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    • pp.153.2-153.2
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    • 2011
  • The IGRINS (Immersion GRating INfrared Spectrometer) is a high resolution wide-band infrared spectrograph developed by Korea Astronomy and Space Science Institute (KASI) and the University of Texas at Austin (UT). Immersion grating is a key component of IGRINS, which disperses the input ray by using a Silicon material with a lithography technology. Opto-mechanical mount for the immersion grating is important to keep the high spectral resolution and the optical alignment in a cold temperature of $130{\pm}0.06K$. The optical performance of immersion grating can maintain within the de-center tolerance of ${\pm}0.05mm$ and the tip-tilt tolerance of ${\pm}1.5arcmin$. The mount mechanism utilizes the flexure and the kinematic support design to satisfy the requirement and the operation condition. When the IGRINS system is cooled down to a cold temperature, three flexures compensate the thermal contraction stress due to the different material between the immersion grating and the mounting part(Aluminum 6061). They also support the immersion grating by an appropriate preload. Thermal stability is controlled by a copper strap with proper dimensions and a heater. Generally structural and thermal analysis was performed to confirm the mount mechanism. This talk presents the opto-mechanical mount design of the immersion grating of IGRINS.

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Characteristics of InGaAs/GaAs/AlGaAs Double Barrier Quantum Well Infrared Photodetectors

  • 박민수;김호성;양현덕;송진동;김상혁;윤예슬;최원준
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.324-325
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    • 2014
  • Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

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