Off-Axis Illumination

패턴 분해능 및 초점심도 향상에 대한 사입사 조명

  • 박정보 (서울대학교 물리교육과) ;
  • 이성묵 (서울대학교 물리교육과)
  • Published : 1999.12.01

Abstract

In this paper, we have studied on the effects of annular and quadrupole illuminations by changing their conditions for enhancing the pattern resolution and depth of focus (OaF) in the optical lithography system using KrF Eximer laser 0.248$\mu$m and 0.65 NA. As a result, it is revealed that each illumination condition to optimize the resolution and the OaF for the mask containing the assistance pattern is different under the annular illumination. And in case of quadrupole illumination, we could ascertain that the resolution and the OaF would be enhanced through changing the arrangement of each pole from the conventional X type (45 degrees) to some proper type according to the main pattern direction. ction.

Keywords

References

  1. Proc. SPIE v.1674 K.Tounai;H.Tanabe;H.Nozue;K.Kasama
  2. J. Vac. Sci. Technol. v.B10 no.6 S.Asai;I.Hanyu;K.Hikosaka
  3. Jpn. J. Appl. Phys. v.33 T.Horiuchi;Y.Takeuchi;E.Tamechika;Y.Mimura;S.Matsuo;K.Harada
  4. J. Vac. Sci. Technol. v.B15 no.5 Tohru Ogawa;Masaya Uematsu;Koichi Takeuchi;Tatsuji Oda
  5. J. Vac. Sci. Technol. v.B17 no.3 Xiaolan Chen;S.R.J.Brueck
  6. J. Opt. Soc. Am. v.A15 no.3 C.J.R.Sheppard;Z.Hegedus
  7. Proc. SPIE v.3334 B.W.Smith;L.Zavyalova;J.S.Petersen
  8. Jpn. J. Appl. Phys. v.33 Burn J. Lin
  9. J. Vac. Sci. Technol. v.B12 no.2 K.Ronse;M. Op de Beeck(etc.)
  10. IEEE, Trans. on Semi. Manuf. v.10 no.1 Y.C.Pati;A.A.Ghazanfarian;R.F.Pease
  11. 한국광학회지 v.9 no.3 박정보;김기호;이성묵