• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.7-16
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• 2022

Recently, the automobile industry is rapidly changing due to technological development. Next-generation cars with high technology and new functions are on the market. It is essential to develop electronic devices to meet the condition of next-generation cars. In this study, the authors have reviewed recent trends of automotive electronics and packaging technology. Automotive electronics are used in harsh environments compared with other industries. Thus, it is important to improve the reliability of device junctions that directly affect electronics performance. Soldering, TLP (transient liquid phase bonding), and sintering are introduced for the bonding methods in car electronics.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.783-787
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• 2004

Microwave dielectric properties and the microstructure of $Ba_5Nb_4O_{15}$ ceramics with $PbO-B_2O_3-SiO_2$ glass frit were investigated to reduce the sintering temperature of $Ba_5Nb_4O_{15}$ ceramics as a function of the amount of glass frit from $0.5wt\%$ to $10wt\%$ and the sintering condition. The sintered density and the microwave dielectric properties of $Ba_5Nb_4O_{15}$ ceramics were remarkably changed with the amount of glass fit which existed as a liquid phase and assisted the densification. $Ba_5Nb_4O_{15}$ with $3wt\%$ $PbO-B_2O_3-SiO_2$ glass frit sintered at $900^{\circ}C$ for 2 h showed dielectric constant (K) of 41.4, a quality factor (Q $\times$f) of 13,485 GHz, and a Temperature Coefficient of resonant Frequency (TCF) of 9 ppm/$^{\circ}C$. Due to no trace of physical and chemical reaction between this composition and Ag electrode cofired at $900^{\circ}C$ for 2 h, this ceramics can be a good candidate for the multilayer dielectric filter.

• Resources Recycling
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• v.20 no.1
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• pp.54-60
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• 2011

The spherical artificial aggregates (AAs) with a diameter of 8 mm, which contains fly ashes discharged from the fluidized bed combustion in a thermal power plant and clay were manufactured by direct sintering method at $1050{\sim}1250^{\circ}C$ for 10 minutes. The effect of fly ash contents on the bloating phenomenon in the AAs was analyzed. The AAs containing fly ash of the amount under 50 wt% showed the black-coring and bloating phenomena. The AAs containing fly ash of the amount over 5Owt%, however, the specific gravity was increased and the color of specimens fully changed to black. These color change phenomena were caused from the formation of FeO by the reduction reaction of almost $Fe_2O_3$ component by the excessive reducing atmosphere formed simultaneously with the rapid emission of the gases generated from the high contents of unburned carbon of with increasing the added fly ash amount. Specific gravity was decreased as fly ash contents increased in the case of sintering at the same temperature condition. Water absorption of all specimens except of the specimens containing 10 wt% fly ashes decreased with increasing sintering temperature. These were because a liquid phase was formed as the increasing the sintering temperature. In the case of the specimens manufactured in this study containing fly ashes discharged from the fluidized bed combustor in a the thermal power plant and 10~90 wt% of clay, the specific gravity was 0.9~1.8 and the water absorptivity was 8~60%, therefore it is considered that those results can be applied to the light or heavy aggregates.

• Korean Journal of Crystallography
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• v.12 no.2
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• pp.70-75
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• 2001

The purpose of this study is to investigate the effect of V₂O/sub 5/ addition on physical and magnetic properties of NiCuZn ferrite for multi-layer chip inductors. NiCuZn ferrite pastes doped with 0, 0.1, 0.3 and 0.5 wt% V₂O/sub 5/ were prepared and samples of ferrite sheets were prepared by the screen printing method. They were sintered at 870, 880, 890 and 900℃, and then their physical and magnetic properties were analyzed. After sintering at 870℃, the sintered density of the ferrite sheet doped with 0.5wt% V₂O/sub 5/ showed the highest value to 5.08g/cm³due to the best densification by the liquid phase sintering, while the microstructures of ferrite sheets doped with 0.1 and 0.3 wt% V₂O/sub 5/ showed and inhibited grain growth. Irrespective of the sintering temperature, the initial permeability of ferrite sheet doped with 0.5 wt% V₂O/sub 5/ was highest and after sintering beyond 880℃, the quality factor of 0.3 wt% V₂O/sub 5/-doped sample appeared to be highest.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.4
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• pp.341-345
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• 2003

ZnWO$_4$shows excellent frequency selectivity due to its high quality factor(Q${\times}$f) at microwave frequencies. However, in order to use ZnWO$_4$as multilayered wireless communication components, its other properties such as sintering temperature(105$0^{\circ}C$). $$\tau$_f$(-70ppm/$^{\circ}C$) and $$\varepsilon$_r$(15.5) should be modified. In present study, TiO$_2$and LiF were used to improve the microwave dielectric and sintering properties of ZnWO$_4$. TiO$_2$ additions to ZnWO$_4$changed $\tau$$_{f}$ from negative to positive value, and also increased $$\varepsilon$_r$, due to its high $$\tau$_f$(＋400ppm$^{\circ}C$) and $$\varepsilon$_r$(100). At 20 mol% TiO$_2$ addition, $$\tau$_f$was controlled to near zero ppm/$^{\circ}C$ with $$\varepsilon$_r$=19.4 and Q${\times}$ f=50000GHz. However, the sintering temperature was 110$0^{\circ}C$. LiF addition to the ZnWO$_4$＋TiO$_2$ mixture greatly reduced the sintering temperature from 110$0^{\circ}C$ to 85$0^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the $$\tau$_f$value due to its high negative $$\tau$_f$ value. Therefore, by controlling the TiO$_2$and LiF amount. temperature stable LTCC(Low Temperature Cofired Ceramics) material with low loss in the ZnWO$_4$-TiO$_2$-LiF system could be fabricated.d.d.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.1-33
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• 2000

Silicon carbide ceramics with sintering additives from the system AlN-Y$_2$O$_3$ can be gas-pressure sintered to theoretical density. While commonly a combination of sesquioxides is used such as Al$_2$O$_3$-Y$_2$O$_3$, the oxynitrid additives offer the advantage that only a nitrogen atmosphere is require instead of a powder. By starting form a mixture of ${\beta}$-SiC and ${\alpha}$-SiC, and by performing dedicated heat treatments after densification, anisotropic grain growth is obtained which leads to a platelet microstructure showing enhance fracture toughness. In the present work, recent improvement of the mechanical behaviour of these materials at ambient and high temperatures is reported. By means of a surface oxidation treatment in air it is possible to obtain four-point bending strengths in excess of 1 GPa, and the strength retention at high temperatures is significantly improved.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.612-618
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• 2000

The WC/WC grain boundary structure and intergranular segregation in WC-Co and WC-VC-Co cemented carbides were investigated by high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy in order to elucidate whether contiguous boundaries were present or not at the atomic level. Some grain boundaries were separated by liquid phase, while others were contiguous at the atomic level. Cobalt was found to be segregated to WC/WC grain boundaries in WC-Co. Cobalt and vanadium were co-segregated to grain boundaries in WC-VC-Co. The segregation width in both materials was about 6 nm. These results suggest that the vanadium present in contiguous boundaries acts as an effective barrier to the migration of boundaries during sintering and annealing. This could explain the grain growth inhibiting mechanism of VC added to WC-Co.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.905-908
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• 2001

The microstructure and the magnetic properties of Mn-Zn ferrite, which were power loss and saturation magnetic flux density, were investigated as the function of the process before firing. The highest initial permeability and the lowest power loss were attained to the specimen with CaO 400 ppm as a resulted from the highest solubility to SiO$_2$and the creation of liquid phase which improved sintering. The biggest grain size, the highest saturation magnetic flux density and the lowest power loss, which was resulted from that the eddy current loss increased as grain size increased but the hysteresis loss much more decreased and the hysteresis loss strongly influenced on the total power loss rather than the eddy current loss, were obtained to the Mn-Zn ferrite added 2wt% PVA. The power loss was lowest and the saturation magnetic flux density was highest in case of 1 ton/$\textrm{cm}^2$ and the grain size was not influenced.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.242-246
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• 1999

For the fabrication of fault current limiting device using HTSC thick film, YBa$_2Cu_3O_x$ superconducting thick film was formed by surface diffusion process of the Y$_2BaCUO_5$ and the mixed compound of (3BaCuO$_2$+2CuO) expected to be liquid phase above the peritectic temperature of YBa$_2Cu_3O_x$. For the surface diffusion, the compounds of 3BaCuO$_2$+2CuO mixed with binder material was patterned on Y$_2BaCUO_5$ substrate by the screen printing method. After proper sintering, the characteristics of current limit on thick film fabricated was measured. The thick film was able to limit the current from 2.8213 mA$_{rms}$nu to 4.2034 mA$_{rms}$ with 500${\omega}$ load resistance, and from 4.1831 mA$_{rms}$ to 4.2150 mA$_{rms}$ with 10${\omega}$ load resistance.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1301-1310
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• 1996

Generally it requires high sintering temperatures more than 135$0^{\circ}C$ to make semiconductive BaTiO3 ceramics. Also it is very difficult to achieve a homogeneous mixing in solid-state reaction method. Therefore the liquid phase distributed to non-uniform dilute the characteristics of PTCR. In order to improve the uniformity this study is used the sol-gel coating method. Using this method we studied the new manufacturing process that had a high reproducibility and mass production capability. Tetraethyl orthosilicate (TEOS) was used as a source of Si. The semiconductive BaTiO3 ceramics which was produced by sol-gel method for the SiO2 addition and sintered between 124$0^{\circ}C$ and 130$0^{\circ}C$ showed almost same resistivity at room temperature among 125$0^{\circ}C$ and 130$0^{\circ}C$. As the results We could be sintered the semiconducting BaTiO3 ceramics at lower temperature even at 125$0^{\circ}C$ maintaining the same specific resistivity ratio ($\rho$max/$\rho$min) at 130$0^{\circ}C$. The specific resistivity both below and above the Curie temperature were increased by slow cooling and the steepness of the plots in the reasion of transition from low to high resistance increased as the cooling rate decreased.