• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.219-223
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• 2000

The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.284-289
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• 2015

This study examined carbon layer coating on silicon carbide (SiC) fibers by utilizing solid-state and wet chemistry routes to confer toughness to the fiber-reinforced ceramic matrix composites, as an alternative to the conventional pyrolytic carbon (PyC) interphase layer. Electrophoretic deposition (EPD) of carbon black nanoparticles using both AC and DC current sources, and the vacuum infiltration of phenolic resin followed by pyrolysis were tested. Because of the use of a liquid phase, the vacuum infiltration resulted in more uniform and denser carbon coating than the EPD routes with solid carbon black particles. Thereafter, vacuum infiltration with controlled variation in phenolic resin concentration, as well as the iterations of infiltration steps, was improvised to produce a homogeneous carbon coating having a thickness of several hundred nanometers on the SiC fiber. Conclusively, it was demonstrated that the carbon coating on the SiC fiber could be achieved using a simpler method than the conventional chemical vapor deposition technique.

• Journal of Korean Society for Atmospheric Environment
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• v.9 no.E
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• pp.390-396
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• 1993

An acid deposition Engineering Model was developed by parameterizing the role of organics in the photochemistry and by simplifying liquid phase processes. This Engineering Model concept was implemented onto the Sulfur Transport Eulerian Model II(STEM II). The Engineering Model version of the STEM(STEM-ENG) saves the CPU time over 50 times and produces the upper and lower limit values prodicted by the original STEM II. These limits obtained by the STEM-ENG can be used to estimate the importance of organics in acid and O3 production. The STEM-ENG with 30,000 grid points can be run on any recent PCs to give a quick assessment of air quality.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.83-86
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• 2003

YBa$_2$Cu$_3$$O_{7-x}$ thin films for coated conductor application were deposited on a MgO single crystalline substrate by a metal organic chemical vapor deposition (MOCVD) system of a vertical type using a single liquid source. The film uniformity was enhanced by controlling the gas shower head structure, the distance between the shower head and substrate, and the rotation of the substrate. The source mole ratio of Y(thd)$_3$: Ba(thd)$_2$: Cu(thd)$_2$ was changed for obtaining stoichiometric film. The phase formation, crystal orientation, surface morphology and film composition were investigated with different source mole ratios, and the critical temperature (T$_{c}$) was measured.red.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.23-23
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• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.106-110
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• 2011

A high thermal conductive AlN composite coating is attractive in thermal management applications. In this study, AlN-YAG composite coatings were manufactured by atmospheric plasma spraying from two different powders: spray-dried and plasma-treated. The mixture of both AlN and YAG was first mechanically alloyed and then spray-dried to obtain an agglomerated powder. The spray-dried powder was primarily spherical in shape and composed of an agglomerate of primary particles. The decomposition of AlN was pronounced at elevated temperatures due to the porous nature of the spray-dried powder, and was completely eliminated in nitrogen environment. A highly spherical, dense AlN-YAG composite powder was synthesized by plasma alloying and spheroidization (PAS) in an inert gas environment. The AlN-YAG coatings consisted of irregular-shaped, crystalline AlN particles embedded in amorphous YAG phase, indicating solid deposition of AlN and liquid deposition of YAG. The PAS-processed powder produced a lower-porosity and higher-hardness AlN-YAG coating due to a greater degree of melting in the plasma jet, compared to that of the spray-dried powder. The amorphization of the YAG matrix was evidence of melting degree of feedstock powder in flight because a fully molten YAG droplet formed an amorphous phase during splat quenching.

• Journal of the Korean Electrochemical Society
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• v.15 no.3
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• pp.149-153
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• 2012

The $Cu_2O/TiO_2$ inverse opal heterojunction arrays were developed by electrochemical deposition of $Cu_2O$ nanoparticles on $TiO_2$ inverse opal arrays. The $Cu_2O$ nanoparticles completely filled the inner pores of $TiO_2$ inverse opal film (prepared by liquid phase deposition with an average thickness of 400 nm) and covered the entire area; exhibiting high crystalline properties of anatase and cubic phase from $TiO_2$ and $Cu_2O$, respectively. From asymmetric current-voltage profile, it was noticeable that a heterojunction was well formed for charge transport from $Cu_2O$ to $TiO_2$ film resulting from the enhanced charge separation yield. In addition, increased photocurrent of 0.19 $mA/cm^2$ (versus 0.08 $mA/cm^2$ under dark condition) was obtained at -0.35 V from the heterojunction structure in the 0.5M $Na_2SO_4$ solution.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1559-1562
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• 1999

We formed $SiO_2:F$ films by low-temperature process called Liquid Phase Deposition(LPD) and investigated its electrical and physical properties. Because of the use of room-temperature and no special vacuum apparatus for forming $SiO_2:F$ films, this technique can have some advantages related with the application to dielectric interlayer for multilevel structure in ULSI devices. The growth rate 100nm/hr was obtained at the growth solution of 2.5mol/l. The P-etch rate showed a similar or better tendency compared with $SiO_2$ films formed by CVD, Sputter, E-beam evaporator etc.. The fourier transform infrared (FTIR) spectra revealed that the contained fluorine atoms exist uniform throughout the formed $SiO_2$ films. The Scanning Electron Microscope images showed that LPD-$SiO_2$ films could be stably grown on silicon substrates and the good step-coverage could also be obtained, which indicates that the LPD-$SiO_2$ films have some possibility of the application to planarization and interlayer dielectric films which are vitally necessary to achieve the multilevel interconnection in ULSI. The I-V characteristics has some distinct differences according to the concentration of growth solution.

• International Journal of Aeronautical and Space Sciences
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• v.4 no.2
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• pp.51-60
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• 2003

An experimental research program is being undertaken to develop a regeneratively-cooled experimental thrust chamber of liquid rocket engine using liquefied natural gas and liquid oxygen as propellants. Prior to firing test using a regenerative cooling with liquefied natural gas in this program, several firing tests were conducted with water as a coolant. Experimental thrust chambers with a thrust of about 10tf were developed and their firing test facility was built up. Injector used in the thrust chamber was of shear-coaxial type appropriate for propellants of gas and liquid phase and cooling channels are of milled rectangular configuration. Periodical variation of the soot deposition and discoloration was observed through an eyes' inspection on the inner wall of a combustion chamber and a nozzle after each firing test, and an intuitive concept of the periodical variation of mixture ratio near the inner wall of a combustion chamber and a nozzle at once was brought about and analyzed quantitatively. Thermal heat flux to the coolant was calculated and modified with the periodical variation model of mixture ratio, and the increment of coolant temperature at cooling channels was compared with measured one.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.345-353
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• 1998

Metal organic chemical vapor deposition (MOCVD) of copper using three Cu( I ) precursors. (hfac)Cu (VTMS) (hfac= hexafluoroacetylacetonate, VTMS= vinyltrimethylsilane), (hfac)Cu(VTMOS) (VTMOS= vinyltri¬methoxysilane) and (hfac)Cu(A TMS) (A TMS= allyltrimethylsilane) was studied. The thermal stability and the gase¬ous phase reaction mechanism of Cu( I ) precursors were identified using $^1H$-, $^I3C$-NMR and Fourier transform infra¬red spectroscopy. It was found out that thermal stability of liquid phase (hfac)Cu(VTMS) and (hfac)Cu(VTMOS) were better than that of (hfac)Cu(A TMS) using FT - NMR. From in-situ FT - IR experiments, the disproportion reaction of Cu(hfac). the decomposition reaction of Cu(hfac), and cracking of free hfac ligand were observed. Also the effect of gaseous phase reaction on the deposition rates and film properties was investigated. The minimum temperature that deposition of copper films from (hfac)Cu(A TMS) was as low as 60$^{\circ}$C and such a low deposition temperature compared with those of other Cu( I ) precursors is believed to be related with weaken Cu- A TMS bond.