• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.45-48
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• 1997

Enhancing the electrical conductivity of the ultrathin organic films is one of the important factors for the development of molecular electronic devices. The Langmuir-Blodgett(LB) technique has recently been attracted interest as the a method of deposition ultrathin films. We have fabricated N-docosyl-N'-methyl viologen-diTCNQ(DMVT) anion radical LB film and investigated the optical and electrical conductivity. We have measured UV/visible and FT-lR spectrum. In ESR spectrum, we confirmed that a half-amplitude linewidth is clearly dependent on both temperature and incident angle, which indicates conducting species change. The in-plane electrical conductivity of 21 layers is approximately 1.37$\times$10$^{-6}$ (S/cm).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.656-661
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• 2005

The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1444-1446
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• 1998

Direct writing of copper lines has been achieved by pyrolytic decomposition of copper formate films using a focused argon ion laser beam($\lambda$ =514.5nm) on a glass. The thickness and linewidth of the deposited copper films were considered as a function of laser power and scan speed. As the result from AES, there are no other elements except for copper after decomposition in the atmospheric ambient.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.237-240
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• 2002

In this W, a NiSi technology suitable for sub-100nm CMOS sevice is proposed. It seems that capping layer has little effect on the sheet resistance and junction leakage current when there is no thermal treatment. However, there happened agglomeration and drastic increase of Junction leakage current without capping layer. In other word, capping layer especially TiN capping layer is highly effective in suppressing thermal effect. It is shown that the sheet resistance of 0.12${\mu}{\textrm}{m}$ linewidth and shallow p+/n junction with NiSi were stable up to 700 t /30 minute thermal treatment.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.260-263
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• 2003

Lasers are used as the source of the interferometers in the industrial field. These lasers need 2 requirements. The first is the narrow linewidth of laser for the long coherence length. The second is the stabilized frequency of laser for the precision measurement. Now HeNe lasers are mostly used and the frequency stability is about 10$^{-9}$ . In this paper, we construct the HeNe laser systems of frequency stabilization using typical 2 method, the beat frequency stabilization method and the intensity difference method. So, we get the frequency stabilities of 2.01$\times$10$^{-9}$ (0.1s), 3.4$\times$10$^{-9}$ (0.1s).

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.25-29
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• 2016

The semiconductor industry has been developed mainly by micronization process due to many advantages of miniaturization of devices. Mass production of semiconductors of 10 nm class has been started recently, and it is expected that the technology generation of 5 nm & 7 nm technology will come. However, excessive linewidth reduction affects physical limits and device reliability. To solve these problems, new process technology development and new concept devices are being studied. In this review, we introduce the next generation technology and introduce the advanced research for the new concept device.

• Bulletin of the Korean Chemical Society
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• v.27 no.8
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• pp.1121-1126
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• 2006

Methanol oxidation effect on carbon supported Pt was investigated as a function of Pt content in a sample which is closely correlated with Pt particle sizes. After prolonged methanol oxidation the Pt particle size did not change within the experimental error ranges. The $^{13}C$ chemical shift and linewidth of CO adsorbed on Pt show non-linear behavior simply due to the Pt particle size difference. The Pt size variation difference between this work and the previous reports of the particle growths is explained by the experimental temperature difference.

• Journal of Magnetics
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• v.9 no.2
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• pp.37-39
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• 2004

Polycrystalline Ni-Mn-Ga films have been deposited onto mica substrates held at 720 K by flash-evaporation method. At room temperature the films have a tetragonal structure with a = b = 0.598 and c = 0.576 nm typical for bulk $Ni_2MnGa$ below a martensitic transformation. Temperature measurements of ferromagnetic resonance reveal a martensitic phase transformation at 310 K. The transformation brings about a substantial decrease in the effective magnetization and a drastic increase in the ferromagnetic resonance linewidth due to a strong increase in the magnetic anisotropy in the martensitic phase.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.86-92
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• 2000

The spin wave absorption spectra are obtained by a simultaneous solution of the Maxwell equation and the Gilbert equation considering the boundary condition of electromagnetic wave and magnetization in the film surfaces. The physical parameters that influence the absorption energy are thickness, exchange stiffness constant, surface magnetic anisotropy, magnetization. damping factor, electric resistivity of the thin film. We investigated how these parameters affect the resonance field, the linewidth and the intensity of the spin wave spectrum.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.126-127
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• 2000

Resonance fluorescence is the manifestation of the interaction between the physical system under consideration and the vacuum-field fluctuation. The fluorescence spectrum provides such physical informations as the energy-level structure of the system, instabilities and relative populations of the energy levels, etc.. One of the typical fluorescence spectra is the Mollow triplet appearing when two-level atoms are driven by a strong coherent field in free space$^{(1)}$ . In the weak field limit, the singlet instead of the triplet is obtained with a reduced linewidth due to the squeezing of one quadrature phase of the induced atomic dipole$^{(2)}$ . On the other hand, when the atoms are put inside a cavity rather than in free space, a doublet spectrum due to the vacuum Rabi-splitting is achieved, showing clearly the coupling of atoms and the cavity in the single-quantum limit$^{(3)}$ . (omitted)