• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.384-389
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• 2009

ZnO, a wurtzite lattice structure, has attracted much attention as a promising material for light-emitting diodes (LEDs) due to highly efficient UV emission resulting from its large band gap of 3.37 eV, large exciton binding energy of 60 meV, and low power threshold for optical pumping at room temperature. For the realization of LEDs, both n-type ZnO and p-type ZnO are required. Now, n-type ZnO for practical applications is available; however, p-type ZnO still has many drawbacks. In this study, ZnO films were grown on glass substrates by using atomic layer deposition (ALD) and the ZnO films were irradiated by nitrogen ion beams (20 keV, $10^{13}{\sim}10^{15}ions/cm^2$). The effects of nitrogen-beam irradiation on the ZnO structure as well as the electrical property were investigated by using fieldemission scanning electron microscopy (FESEM) and Hall-effect measurement.

• Korean Journal of Metals and Materials
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• v.46 no.10
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• pp.683-690
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• 2008

In order to develop transparent electrodes for high efficiency GaN-based light emitting diodes (LEDs), the electrical and optical properties of the electron beam evaporated ITO contacts have been investigated as a function of the deposition temperature and flow rate of oxygen during the deposition. As the deposition temperature increases from $140^{\circ}C$ to $220^{\circ}C$, the resistivity of the ITO films decreases slightly from $4.0{\times}10^{-4}{\Omega}cm$ to $3.3{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films significantly increases from 67% to 88% at the wavelength of 470 nm. When the flow rate of oxygen during the deposition increases from 2 sccm to 4 sccm, the resistivity of the ITO films increases from $3.6{\times}10^{-4}{\Omega}cm$ to $7.4{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films increases from 86% to 99% at 470 nm. Blue LEDs fabricated with the electron beam evaporated ITO electrode show that the ITO films deposited at $200^{\circ}C$ and 3 sccm of the oxygen flow rate give a low forward-bias voltage of 3.55 V at injection current of 20 mA with a highest output power.

• Journal of Surface Science and Engineering
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• v.47 no.5
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• pp.233-238
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• 2014

In this paper, in order to achieve slim and light liquid crystal display, we examine the optical conditions that can obtain uniform light with higher optical efficiency over whole light guide plate (LGP) through simulation. Furthermore, to overcome the issues of hot spot in front of red, green, and blue light emitting diodes (RGB LEDs) source and non-uniform color mixing, we propose four shaped color mixing bars tied up with the LGP and check the optical characteristics of the LGP with them by simulation. Consequently, we could know the optical conditions of improving optical efficiency and optical uniformity in the LGP through the optical design. Also we confirmed that the issues of the hot spot and non-uniform color mixing in edge type LED could be solved by using the ${\bigwedge}$-shaped window color mixing bar.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1268-1274
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• 2018

Aircraft-warning lights are lights that are used to inform pilots in flight about the presence of buildings or dangerous objects. Currently, the light sources of most aircraft-warning lights have been replaced by light-emitting diodes (LEDs). However, the aircraft-warning lights that are installed do not meet the optical performance standards and may cause airplane collisions. Therefore, the use of such light poses a risk to aviation safety. In order to solve this problem, we designed a Fresnel lens with the same luminous intensity distribution ovef $360^{\circ}$ direction; thus, we collimated the light beam from the LED light source with a narrow beam divergence angle in the form of an array of aspheric pieces. After that, we designed and simulated an aircraft-warning-light optical system with a center luminous intensity of 20,000 cd and a vertical divergence angle of $3^{\circ}$ or more by optimizing the lens' tilt and the distance between the LED and the Fresnel lens.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.12-17
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• 2011

In this paper, we report on the improved electrical and optical characteristics for decreasing current crowding effect and uniform current distribution by designing octagonal finger type electrode pattern in large-scale lateral GaN (Gallium Nitride) LED (Light-emitting diode) with numerical 3-D simulator. Compared with the conventional electrode pattern, proposed electrode pattern was investigated to confirm the improvement of characteristics. From the simulation results of 3-D SpeCLED/RATRO simulator, we found that the forward voltage was decreased by 0.34 V and the light output power was improved by 7.72 mW at the same injection current condition in the LED with proposed octagonal finger type electrode.

• Design & Manufacturing
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• v.17 no.2
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• pp.22-26
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• 2023

As Light-Emitting Diodes(LEDs) continue to advance in performance, their application in automotive lamps is increasing. Automotive LEDs utilize light guides not only for aesthetics but also to control light quantity and direction. Light guides employ patterns of a few hundred micrometers(㎛) to regulate the light, and the surface roughness(Ra) of these patterns can reach tens of nanometers(nm). Given that these light guides are produced through injection molding, mold processing technology with high surface quality micro-patterns is required. This study serves as a preliminary investigation into the development of high surface quality micro-pattern processing technology. It examines the surface roughness of the workpiece based on the cutting direction of the pattern and the cutting fluid type when cutting micro-patterns on STAVAX steel using cubic Boron Nitride(cBN) tools. The experiments involved machining a step-shaped micro-pattern with a height of 60 ㎛ and a pitch of 400 ㎛ in a 22×22 mm area under identical cutting conditions, with only the cutting direction and cutting fluid type being varied. The machining results of four cases were compared, encompassing two cases of cutting direction(parallel to the pattern, orthogonal to the pattern) and two cases of cutting fluid type (flood, mist). Consequently, the Ra value was found to be the highest(Ra 128.33 nm) when machining with the flood type in parallel to the pattern, while it was the lowest(Ra 95.22 nm) when machining with the mist type orthogonal to the pattern. These findings confirm that there is a difference of up to 25.8 % in the Ra value depending on the cutting direction and cutting fluid type.

• Journal of Microbiology and Biotechnology
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• v.12 no.6
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• pp.962-971
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• 2002

The current study proposes a simple monodimensional model to estimate the linear growth rate of photosynthetic microorganisms in flat-plate photobioreactors (FPPBRs) during batch cultivation. As a model microorganism, Chlorella kessleri was cultivated photoautotrophically in FPPBRs using light-emitting diodes (LEDs) as the light sources to provide unidirectional irradiation in the photobioreactors. Various conditions were simulated by adjusting both the intensity of the light and the height of the culture. The validity of the proposed model was examined by comparing the linear growth rates measured with the predicted ones obtained from the proposed model. Accordingly, the value of $\frac{K\cdot\mu m}{\alpha\cdot L}log(I_0\cdot{I_s}^{\varepsilon 1)\cdot {I_c}^{-\varepsilon})$ was proposed as an approximate index for strategies to obtain the maximal lightn yield under light-limiting conditions for high-density algal cultures and as a control parameter to improve the photosynthetic productivity and efficiency.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.8 no.4
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• pp.1276-1291
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• 2014

In the field of visible light communication (VLC), light-emitting diodes (LEDs) are used for transmitting data via visible light. In this study, we analyze pulse dual slope modulation (PDSM) as a means of delivering information in VLC. PDSM involves the modulation of symmetrical slope pulses to encode binary 0s and 1s, and owing to the moderately increasing and decreasing pulse shapes that are created, this method enables more spectral efficiency than the variable pulse position modulation (VPPM) technique currently adopted in IEEE 802.15.7. In particular, PDSM allows for the avoidance of intra-frame flicker by providing idle pulses in a spectrum-efficient way. A simple detection scheme is proposed for PDSMsignals, and its bit error rate (BER) is analyzed mathematically at varying slopes to validate the process through simulation. The BER performance of PDSM detection using dual sampling is compared to the performances of PDSM and VPPM using correlation detection. It is found that, when the probability of idle pulse transmission is less than 0.08 and higher than 0, the BER of dual sampling PDSM is lower than that of PDSM using correlation detection over the entire light intensity range.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.189-189
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• 2016

Recently, many researchers have shown an increased interest in colloidal quantum dots (QDs) due to their unique physical and optical properties of size control for energy band gap, narrow emission with small full width at half maxima (FWHM), broad spectral photo response from ultraviolet to infrared, and flexible solution processing. QDs can be widely used in the field of optoelectronic and biological applications and, in particular, colloidal QDs based light emitting diodes (QDLEDs) have attracted considerable attention as an emerging technology for next generation displays and solid state lighting. A few methods have been proposed to fabricate white color QDLEDs. However, the fabrication of white color QDLEDs using single QD is very challenging. Recently, hybrid nanocomposites consisting of CdTe/ZnO heterostructures were reported by Zhimin Yuan et al.[1] Here, we demonstrate a novel but facile technique for the synthesis of CdTe/ZnO/G.O(graphene oxide) quasi-core-shell-shell quantum dots that are applied in the white color LED devices. Our best device achieves a maximum luminance of 484.2 cd/m2 and CIE coordinates (0.35, 0.28).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.