• 제목/요약/키워드: Light-Emitting Diodes (LEDs)

검색결과 365건 처리시간 0.025초

다파장 IR과 NIR 모듈의 평균 수명 예측에 관한 연구 (Study on the MTTF of Multi Wave Lengths IR and NIR LEDs Module)

  • 김동표;김경섭
    • 한국전기전자재료학회논문지
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    • 제34권1호
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    • pp.44-49
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    • 2021
  • Recently, infrared (IR) and near-infrared (NIR) light-emitting diodes (LEDs) were widely used for home medical applications owing to its low output power and wide exposed area for curing. For deep penetration of the light under the skin, multiple LEDs with wavelengths of 700~10,000 nm were located on a flexible printed circuit board. When multiple wavelengths of LEDs were soldered on a circuit board, the lifetime of LED module highly depends on LEDs with a short lifetime. The mean time to failure (MTTF) was able to calculate with the experimental results under high temperature and the Arrhenius model. The results of this study could help companies to approve the warranty of LED modules and its product.

LED를 광원으로 사용한 해양미세조류 Isochrysis galbana 상관관계 조건 도출 연구 (Correlation Conditions for Marine Microalgae Isochrysis galbana under Illumination of Light Emitting Diodes)

  • 최보람;김동수;이태윤
    • 한국지반환경공학회 논문집
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    • 제13권10호
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    • pp.63-68
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    • 2012
  • 본 연구는 해양미세조류의 일종인 Isochrysis galbana를 다양한 파장의 발광다이오드를 이용하여 배양한 후 최적 파장을 찾아내고, 최적파장을 광원으로 하여 회분식 실험에서의 대량 배양 조건을 찾기 위해 수행되었다. I. galbana 배양에 가장 효율적인 파장은 백색 LED였으며, 백색 LED의 광도에 따른 실험을 통해 3,000Lux의 광도가 본 미세조류의 성장에 최적임을 알 수 있었다. 형광등과의 비교 실험 시 같은 광도에서 백색 LED가 미세조류의 배양에 있어 10% 정도 높은 효율을 나타내었다. 배양이 진행되어 셀 농도가 증가하면서 발생하는 그림자 효과를 상쇄시키기 위해 공기 공급을 하였으며, 4가지 조건의 공기 공급 속도에서 모두 비슷한 성장특성을 보여주었다. 공기를 주입한 경우 주입하지 않은 경우보다 최대 3배 이상 균체 농도가 증가하였다.

Synthesis and Color Tuning of Poly(p-phenylenevinylene) Containing Terphenyl Units for Light Emitting Diodes

  • Jin, Young-Eup;Kim, Jin-Woo;Park, Sung-Heum;Kim, Hee-Joo;Lee, Kwang-Hee;Suh, Hong-Suk
    • Bulletin of the Korean Chemical Society
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    • 제26권11호
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    • pp.1807-1818
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    • 2005
  • New PPV based conjugated polymers, containing terphenyl units, were prepared as the electroluminescent (EL) layer in light-emitting diodes (LEDs). The prepared polymers, poly[2,5-bis(4-(2-etylhexyloxy)phenyl)-1,4-phenylenevinylene] (BEHP-PPV), poly[2-(2-ethylhexyloxy)-5-(4-(4-(2-etylhexyloxy)phenyl)phenyl)-1,4-phenylenevinylene] (EEPP-PPV) and poly[2-(2-ethylhexyloxy)-5-(9,9-bis(2-etylhexyl)fluorenyl)-1,4 phenylenevinylene] (EHF-PPV), were soluble in common organic solvents and used as the EL layer in double layer light-emitting diodes (LEDs) (ITO/PEDOT/polymer/Al). The polymers were prepared by the Gilch reaction. The number-average molecular weight $(M_n)$, weight-average molecular weight $(M_w)$, and the polydispersities (PDI) of these polymers were in the range of 9000-58000, 27000-231000, 2.9-3.9, respectively. These polymers have quite good thermal stability with decomposition starting above 320-350. The polymers show photoluminescence (PL) with maximum peaks at around 526-562 nm (exciting wavelength, 410 nm) and blue EL with maximum peaks at around $\lambda_{max}$ = 526-552 nm. The current-voltageluminance (I-V-L) characteristics of polymers show turn-on voltages of 5 V. Even though both of EEPP-PPV and BEHP-PPV have the same terphenyl group in the repeating unit, EEPP-PPV with directly substituted alkoxy group in the back bone has longer effective conjugation length than BEHP-PPV, and exhibits red shift in the PL spectra. Both of EEPP-PPV and EHF-PPV have ter-phenyl units and directly substituted alkoxy group in back bone. EHF-PPV with fluorenyl unit attached to the PPV backbone has shorter effective conjugation length than EEPP-PPV with biphenyl unit, and exhibits blue shift in the PL spectra.

Synthesis and Properties of PCPP-Based Conjugated Polymers Containing Pendant Carbazole Units for LEDs

  • Jin, Young-Eup;Kim, Sun-Hee;Lee, Hyo-Jin;Song, Su-Hee;Kim, Yun-Na;Woo, Han-Young;Lee, Kwang-Hee;Suh, Hong-Suk
    • Bulletin of the Korean Chemical Society
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    • 제28권12호
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    • pp.2419-2425
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    • 2007
  • New poly(cyclopenta[def]phenanthrene) (PCPP)-based conjugated copolymers, containing carbazole units as pendants, were prepared as the electroluminescent (EL) layer in light-emitting diodes (LEDs) to show that most of them have higher maximum brightness and EL efficiency. The prepared polymers, Poly(2,6-(4-(6-(Ncarbazolyl)- hexyl)-4-octyl-4H-cyclopenta[def]phenanthrene)) (CzPCPP10) and Poly(2,6-(4-(6-(N-carbazolyl)- hexyl)-4-octyl-4H-cyclopenta[def]phenanthrene))-co-(2,6-(4,4-dioctyl-4H-cyclopenta[def]phenanthrene)) (CzPCPP7 and CzPCPP5), were soluble in common organic solvents and used as the EL layer in light-emitting diodes (LEDs) of configuration with ITO/PEDOT/polymer/Ca/Al device. The polymers are thermally stable with glass transition temperature (Tg) at 77-100 °C and decomposition temperature (Td) at 423-457 °C. The studies of cyclic voltammetry indicated same HOME levels in all polymers, although the ratios of carbazole units are different. In case of PLEDs with configuration of ITO/PEDOT/CzPCPPs/Ca/Al device, The EL maximum peaks were around 450 nm, which the turn-on voltages were about 6.0-6.5 V. The maximum luminescence of PLEDs using CzPCPP10 was over 4400 cd/m2 at 6.5 V, which all of the maximum EL efficiency were 0.12 cd/A. The CIE coordinates of the EL spectrum of PLEDs using CzPCPP10 was (0.18, 0.08), which are quite close to that of the standard blue (0.14, 0.08) of NTSC.

CaxSr2-xSiO4:Eu2+ Green-emitting Nano Phosphor for Ultraviolet Light Emitting Diodes

  • Kim, Jong Min;Choi, Hyung Wook
    • Transactions on Electrical and Electronic Materials
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    • 제15권5호
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    • pp.249-252
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    • 2014
  • The aim of this work is to investigate the effect of $Ca_xSr_{2-x}$ and activator on the structural and luminescent properties of green-emitting $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ nano phosphor. Using urea as fuel and ammonium nitrate as oxidizer, $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ has been successfully synthesized, using a combustion method. The particles were found to be small, spherical and of round surface. SEM imagery showed that the phosphors particles are of nanosize. The $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ emission spectrum for 360 nm excitation showed a single band, with a peak at 490 nm, which is a green emission. The highest luminous intensity was at $1,000^{\circ}C$, which was obtained when the $Eu^{2+}$ content (y) was 0.05. The results support the application of $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ phosphor as a fluorescent material for ultraviolet light-emitting diodes (UV-LEDs). Characteristics of the synthesized $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ phosphor were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and photoluminescence (PL) detection.

ZnO 나노로드 배열에 의한 GaN기반 광다이오드의 광추출율 향상 (Improved Light Output of GaN-Based Light-Emitting Diodes with ZnO Nanorod Arrays)

  • 이삼동;김경국;박재철;김상우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.59-60
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    • 2008
  • GaN-based light-emitting diodes (LEDs) with ZnO nanorod arrays on a planar indium tin oxide (ITO) transparent electrode were demonstrated. ZnO nanorods were grown into aqueous solution at low temperature of $90^{\circ}C$. Under 20 mA current injection, the light output efficiency of the LED with ZnO nanorod arrays on ITO was remarkably increased by about 40 % of magnitude compared to the conventional LED with only planar ITO. The enhancement of light output by the ZnO nanorod arrays is due to the formation of side walls and a rough surface resulting in multiple photon scattering at the LED surface.

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비닐렌기에 플루오르기를 도입한 m-SiP-PPDFV의 합성과 색 안정성에 대한 물성 (Synthesis and Properties about Color Stability of m-SiP-PPDFV with Difluoro Groups in Vinylene Units)

  • 진영읍;서홍석
    • 대한화학회지
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    • 제54권6호
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    • pp.711-716
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    • 2010
  • 비닐렌기에 플루오르 치환기를 도입한 새로운 전자발광 (EL) 고분자인 poly(m-silylphenyl-p-phenylene-difluorovinylene) (m-SiP-PPDFV)는 GILCH polymerization 방법에 의해 합성된다. 이들 고분자는 단층 구조 (ITO/PEDOT/polymer/Ca:Al)의 light-emitting diodes (LEDs)에서 EL 발광층으로 사용되었다. m-SiP-PPDFV는 $\lambda_{max}$ = 452 nm 주위에서 PL 발광파장을 나타내었고, $\lambda_{max}$ = 497 nm 주위에서 녹색의 EL 발광을 나타내었다. 고분자의 current-voltage-luminance (I-V-L) 특성에서는 4.0 V 정도에서부터 소자가 작동되기 시작하였다. 고분자의 전자 친화도를 증가시키는 m-SiP-PPDFV을 얻기 위해 m-SiP-PPV의 모든 비닐렌기에 두개의 플루오르기를 도입하였고, 이로 인하여 소자 구동에서 비닐렌기의 색 안정도를 나타냈었다. PPV 유도체들에서 일어나는 비닐렌기의 산화반응을 보호하는 플루오르기는 전자 끄는 효과를 가지고 있어 소자의 색 안정도를 유지시킨다. 이번 연구로, 보다 안정화된 PPV 유도체를 얻기 위해, 플루오르기가 비닐렌기에 도입될 수 있음을 보여주고 있다.

Ti-Al 반사막을 이용한 405 nm LED의 광추출 효율 향상 (Enhancement in the light extraction efficiency of 405 nm light-emitting diodes by adoption of a Ti-Al reflection layer)

  • 김창연;권새롬;이두형;노승정
    • 한국진공학회지
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    • 제17권3호
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    • pp.211-214
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    • 2008
  • Metal organic chemical vapor deposition (MOCVD)를 이용하여 사파이어 기판 위에 405 nm의 파장을 갖는 GaN light-emitting diode (LED)를 제작하였다. LED의 InGaN 활성층에서 생성되어 칩의 후면으로 향하는 광자를 전면으로 반사시키기 위하여, 사파이어 기판 후면에 반사막을 증착하였다. 반사막으로는 Al을 사용하였으며, 사파이어 기판에 대한 Al 박막의 접착력을 개선하기 위하여 사파이어 기판 후면에 Ti를 먼저 증착한 후에 Al을 증착하였다. Ti-Al 반사막을 채용한 결과, 광추출 효율이 52 % 향상되었다.

Effect of Color of Light Emitting Diode on Development of Fruit Body in Hypsizygus marmoreus

  • Jang, Myoung-Jun;Lee, Yun-Hae;Ju, Young-Cheol;Kim, Seong-Min;Koo, Han-Mo
    • Mycobiology
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    • 제41권1호
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    • pp.63-66
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    • 2013
  • This study was conducted to identify a suitable color of light for development of the fruit body in Hypsizygus marmoreus. To accomplish this, samples were irradiated with blue (475 nm), green (525 nm), yellow (590 nm), or red (660 nm) light emitting diodes (LEDs) to induce the formation of fruiting bodies after mycelia growth. The diameter and thickness of the pileus and length of stipes in samples subjected to blue LED treatment were similar to those of subjected to fluorescent light (control), and the lengths of the stipes were highest in response to treatment with the red LED and darkness. The commercial yields of plants subjected to blue and green LED treatment were similar to those of the control. In conclusion, cultivation of H. marmoreus coupled with exposure to blue LED is useful for inducing high quality fruit bodies as well as higher levels of ergosterol, DPPH radical scavenging activity, total polyphenol content and reducing power.

Ohmic contacts to p-type GaN for high brightness LED applications

  • Seong, Tae-Yeon
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.23-23
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    • 2003
  • GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.

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