• Title/Summary/Keyword: Light emitting device

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The effect of fullerene on the device performance of organic light-emitting

  • Lee, Jun-Yeob
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1805-1808
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    • 2006
  • In this paper, we describe a versatile use of fullerene(C60) as a charge transporting material for organic light-emitting diodes. The use of fullerene as a buffer layer for an anode, a doping material for hole transport layer, and an electron transport layer was investigated. Fullerene improved the hole injection from an anode to a hole transport layer by lowering the interfacial energy barrier and enhanced the lifetime of the device as a doping material for a hole transport layer. In addition, it was also effective as an electron transporting material to get low driving voltage in the device.

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Efficient Blue Light Emitting Diode by Using Anthracene Derivative with 3,5-Diphenylphenyl Wings at 9- and 10-Position

  • Kim, Yun-Hi;Lee, Sung-Joong;Jung, Sang-Yun;Byeon, Ki-Nam;Kim, Jeong-Sik;Shin, Sung-Chul;Kwon, Soon-Ki
    • Bulletin of the Korean Chemical Society
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    • v.28 no.3
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    • pp.443-446
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    • 2007
  • The novel blue light emitting material, 9,10-bis(3',5'-diphenylphenyl)anthracene (BDA) was synthesized by Suzuki coupling reaction and characterized by the measurements of 1H NMR, 13C NMR and FT-IR. The new anthracene derivative, which contains anthracene as a main core unit and 3',5'-diphenylphenyl group derivative as wings, has high fluorescence yield, good thermal stability, and high glass transition temperature at 188 oC. With the newly non-doped blue emitting material in the multilayer device structure, it was possible to achieve the current efficiency of 3.0 cd/A. The EL spectrum of the ITO/CuPc/α-NPD/BDA/Alq3/LiF/Al device showed a maximum wavelength (λmax) at 440 nm. The emitting color of device showed the blue emission (x,y) = (0.18,0.19) at 10 mA/cm2 in CIE (Commission Internationale de l'Eclairage) chromaticity coordinates.

Light-emitting devices with polymer-organic heterostructure

  • Do, Lee-Mi;Hwang, Do-Hoon;Choi, Kang-Hoon;Lee, Hyang-Mok;Jung, Sang-Don;Zyung, Taehyoung
    • Journal of the Optical Society of Korea
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    • v.1 no.2
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    • pp.116-119
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    • 1997
  • Highly quantum efficient and multi-color emissible polymer light emitting devices have been realized utilizing poly (1-dodecyloxy-4-methyl-1, 3-phenylene)(2, 5"-terthienylene)(hereafter, mPTTh polymer) as an emitting layer and tris(8-hydroxyquinoline) aluminum (Alq3) as an electron transport layer. A single layer EL device of mPTTh polymer emits orange-colored light. EL efficiency increases as the thickness of Alq3 layer increases, but the emission color becomes visually broad when the Alq3 layer thickness is greater than 30nm since the relative peak intensity of green EL from Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer increases. EL efficiency of the double layer device was greatly enhanced by 3000 times compared with that of a single layer device. Alq3 layer in device acts as a hole blocking electron transporting layer and an emitting layer as a function of the thickness of Alq3 layer.ayer.

Blue Light Emitting Electroluminescence Diode (Coronene을 이용한 청색 유기전계 발광 소자의 개발)

  • Lim, Sung-Taek;Shin, Dong-Myung;Roh, Suk-Won
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1377-1378
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    • 1998
  • Blue light emitting electroluminescence(EL) diodes were fabricated utilizing Coronene and some organic materials. Coronene showed photoluminescence(PL) peak at 450nm in solution with high quantum efficiency. Multi layer system was applied to fabricate EL diode utilizing Coronene. The device showed didode-like applied voltage-current relationship. And blue light emitting was observed. The decay time of device was in a scale of some seconds. The trun-on voltage of device was about 9 V.

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Built-in Voltage in Organic Light-emitting Diodes depending on the Alg3 Layer Thickness (Alg3 두께 변화에 따른 유기 발광 소자의 내장 전압)

  • Lee, Eun-Hye;Yoon, Hee-Myoung;Kim, Tae-Wan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.3
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    • pp.255-259
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    • 2008
  • Built-in voltage in ITO/$Alq_3$/ Al organic light-emitting diodes was studied by varying a thickness of $Alq_3$ layer using modulated photocurrent technique at ambient condition. A thickness of the $Alq_3$ layer was varied from 100 to 250 nm. From the bias voltage-dependent photocurrent, built-in voltage of the device was able to be determined. The obtained built-in voltage is about 0.8 V irrespective of the $Alq_3$ layer thickness in the device. This value of built-in voltage confirms that the built-in voltage is generated due to a difference of work function of the anode and cathode. The $Alq_3$ layer thickness independent built-in voltage indicates that the built-in electric field in the device is uniform across the organic layer.

Improved Performance of White Phosphorescent Organic Light-Emitting Diodes through a Mixed-Host Structure

  • Lee, Jong-Hee;Lee, Jeong-Ik;Chu, Hye-Yong
    • ETRI Journal
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    • v.31 no.6
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    • pp.642-646
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    • 2009
  • Highly efficient white phosphorescent organic light-emitting diodes with a mixed-host structure are developed and the device characteristics are studied. The introduction of a hole-transport-type host (N, N'-dicarbazolyl-3-3-benzen (mCP)) into an electron-transport-type host (m-bis-(triphenylsilyl)benzene (UGH3)) as a mixed-host emissive layer effectively achieves higher current density and lower driving voltage. The peak external quantum and power efficiency with the mixed-host structure improve up to 18.9% and 40.9 lm/W, respectively. Moreover, this mixed-host structure device shows over 30% enhanced performance compared with a single-host structure device at a luminance of 10,000 $cd/m^2$ without any change in the electroluminescence spectra.

Study on the ITO Pre-treatment for the Highly Efficient Solution Processed Organic Light-emitting Diodes (고효율의 용액공정용 유기 발광 다이오드 제작을 위한 ITO 전처리 연구)

  • Choi, Eun-Young;Seo, Ji-Hyun;Choi, Hak-Bum;Je, Jong-Tae;Kim, Young-Kwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.1
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    • pp.18-23
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    • 2010
  • We demonstrated that the solution processed organic light-emitting diodes (OLEDs) have the high efficiency with pre-treated indium-tin-oxide (ITO). ITO surface was pre-treated with four methods and compared each other. The pre-treatment of ITO surface improves the chemical and physical characteristics of ITO such as the surface roughness, adhesion property, and the hole injection ability. These properties were analyzed by the contact angle, atomic force microscope (AFM) image, and the current flow character in device. As a results, the device with ITO pre-treated by $O_2$ plasma shows the current efficiency of 5.93 cd/A, which is 1.5 times the device without pre-treatment.

Effect of Ancillary Ligand, Phenyl group, on the Emission Spectrum of Pt(II) Complex Useful for Organic Light-Emitting Device (유기전기발광소자에 사용될 수 있는 백금 착물에 대해 보조리간드 phenyl 기가 발광스펙트럼에 미치는 영향)

  • Lee, Seung-Hee;Lee, Ho-Joon
    • Journal of the Korean Applied Science and Technology
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    • v.25 no.2
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    • pp.265-268
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    • 2008
  • Among the efforts to increase the efficiency of organic light-emitting device (OLED), there is a way: doping phosphorescent materials. As a phosphorescent material, complexes of heavy transition metal, platinum, were synthesized. $Cl^-$ ion and phenyl group were used as ancillary ligands with 2-(2-pyridyl)benzimidazole (pbi) as a chromophore. The complexes were analysed by FAB-mass spectrometer and absorption and emission spectra were obtained. A phenyl group was able to shift the emission band of the complex even if it's not a chromorphore.

Bipolar Transport Model of Single Layer OLED for Embedded System

  • Lee, Jung-Ho;Han, Dae-Mun;Kim, Yeong-Real
    • Proceedings of the Korea Society of Information Technology Applications Conference
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    • 2005.11a
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    • pp.237-241
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    • 2005
  • We present a device model for organic light emitting diodes(OLEDs) which includes charge injection, transport, recombination, and space charge effects in the organic materials. The model can describe both injection limited and space charge limited current flow and the transition between them. Calculated device current, light output, and quantum and power efficiency are presented for different cases of material and device parameters and demonstrate the improvements in device performance in bilayer devices. These results are interpreted using the calculated spatial variation of the electric field, charge density and recombination rate density in the device. We find that efficient OLEDs are possible for a proper choice of organic materials and contact parameters.

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Effect of Thermal Annealing on Nanoscale Thickness and Roughness Control of Gravure Printed Organic Light Emitting for OLED with PVK and $Ir(ppy)_3$

  • Lee, Hye-Mi;Kim, A-Ran;Kim, Dae-Kyoung;Cho, Sung-Min;Chae, Hee-Yeop
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1511-1514
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    • 2009
  • Organic light emitting layer in OLED device was formed by gravure printing process in this work. Organic surface coated by gravure printing typically showed relatively bad uniformity. Thickness and roughness control was characterized by applying various mixed solvents in this work. Poly (N-vinyl carbazole) (PVK) and fact-tris(2-phenylpyridine)iridium($Ir(ppy)_3$) are host dopant system materials. PVK was used as a host and Ir(ppy)3 as green-emitting dopant. To luminance efficiency of the plasma treatment on etched ITO glass and then PEDOT:PSS spin coated. The device layer structure of OLED devices is as follow Glass/ITO/PEDOT:PSS/PVK+Ir(ppy)3-Active layer /LiF/Al. It was printed by gravure printing technology for polymer light emitting diode (PLED). To control the thickness multi-printing technique was applied. As the number of the printing was increased the thickness enhancement was increased. To control the roughness of organic layer film, thermal annealing process was applied. The annealing temperature was varied from room temperature, $40^{\circ}C$, $80^{\circ}C$, to $120^{\circ}C$.

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