• Title/Summary/Keyword: Light Metal

Search Result 1,254, Processing Time 0.037 seconds

Comparison of the bonding strengths of second- and third-generation light-emitting diode light-curing units

  • Lee, Hee-Min;Kim, Sang-Cheol;Kang, Kyung-Hwa;Chang, Na-Young
    • The korean journal of orthodontics
    • /
    • v.46 no.6
    • /
    • pp.364-371
    • /
    • 2016
  • Objective: With the introduction of third-generation light-emitting diodes (LEDs) in dental practice, it is necessary to compare their bracket-bonding effects, safety, and efficacy with those of the second-generation units. Methods: In this study, 80 extracted human premolars were randomly divided into eight groups of 10 samples each. Metal or polycrystalline ceramic brackets were bonded on the teeth using second- or third-generation LED light-curing units (LCUs), according to the manufacturers' instructions. The shear bond strengths were measured using the universal testing machine, and the adhesive remnant index (ARI) was scored by assessing the residual resin on the surfaces of debonded teeth using a scanning electron microscope. In addition, curing times were also measured. Results: The shear bond strengths in all experimental groups were higher than the acceptable clinical shear bond strengths, regardless of the curing unit used. In both LED LCU groups, all ceramic bracket groups showed significantly higher shear bond strengths than did the metal bracket groups except the plasma emulation group which showed no significant difference. When comparing units within the same bracket type, no differences in shear bond strength were observed between the second- and third-generation unit groups. Additionally, no significant differences were observed among the groups for the ARI. Conclusions: The bracket-bonding effects and ARIs of second- and third-generation LED LCUs showed few differences, and most were without statistical significance; however, the curing time was shorter for the second-generation unit.

In vitro Propagation of Transgenic Ginsengs Introduced with Ferritin Light Heavy Chain Gene through Single Embryo Culture (Ferritin Light Heavy Chain 유전자가 도입된 인삼형질전환체의 단일배발생을 통한 식물체의 기내증식)

  • 윤영상;김종학;김무성;양덕춘
    • Korean Journal of Plant Resources
    • /
    • v.17 no.2
    • /
    • pp.161-168
    • /
    • 2004
  • Optimal regeneration conditions of ginseng transformants were studied. It has been known that Ferritin Light Heavy Chain (FLHC) gene remove the several heavy metal by combination, store and transport. To obtain the ginseng tolerant to heavy metal, binary vector was introduced in Agrobacterium by tri-parental mating and then Agrobacterium tumefaciens MP90/FLHC was selected on the AB media and MS media containing kanamycin. Explants were co-cultured with Agrobacterium tumefaciens MP90/FLHC, which contained NPT II as a selectable marker, tadpole ferritin heavy chain (FLHC) gene and human ferritin light chain gene and then a number of embryos were induced. The induced embryo transferred to shooting media consisting of MS medium supplemented with GA 10 mg/L. As a result of examination that induced the normal growth of transfomants, transformants showed the equivalent growth in both root and shoot on the media containing the 1/3 MS.

Light Extraction Improvement of 400 nm Wavelength GaN-Based Light-Emitting Diode by Textured Structures (거친 표면구조를 이용한 400 nm 파장 GaN계 발광다이오드의 광 추출효율 개선)

  • Kim, Duck-Won;Yu, Soon-Jae;Seo, Ju-Ok;Kim, Hee-Tae;Seo, Jong-Wook
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.10 no.7
    • /
    • pp.1514-1519
    • /
    • 2009
  • We fabricated the GaNLED emitting 400 nm wavelength and improved the optical extraction efficiency by making surface patterns on n-GaN layer and ITO layer above p-GaN. In addition, the light reflection metal under the n and p pad is made and the light reflection metal is installed on the backside of the chip. The light extraction efficiency is increased by 20 % with texturing n-GaN layer and 18% with texturing ITO layer at 20 mA. Compared to planar-surface LED, the light extraction efficiency for surface texturing both n-GaN and ITO is increased by 32% at 20mA.

THE EFFECT OF ACID ETCHING ON GLASS IONOMER CEMENT SURFACES (Glass ionomer cement 표면의 산부식 효과에 관한 연구)

  • Han, Seung-Weon;Park, Sang-Jin;Min, Byung-Soon;Choi, Ho-Young;Choi, Gi-Woon
    • Restorative Dentistry and Endodontics
    • /
    • v.18 no.1
    • /
    • pp.1-26
    • /
    • 1993
  • The purpose of this study was to investigate the effect of acid etching on the surface appearance and fracture toughness of five glass ionomer cements. Five kinds of commercially available glass ionomer cements including chemical curing filling type, chemical curing lining type, chemical curing metal reinforced type, light curing tilling type and light curing lining type were used for this study. The specimens for SEM study were fabricated by treating each glass ionomer cement with either visible light curing or self curing after being inserted into a rubber mold (diameter 4mm, depth 1mm). Some of the specimens were etched with 37% phosphoric acid for 0, 15, 30, 60, go seconds, at 5 minutes, 1 hour and 1 day after mixing of powder and liquid. Unetched ones comprised the control group and the others were the experimental groups. The surface texture was examined by using scanning electron microscope at 20 kV. (S-2300, Hitachi Co., Japan). The specimens for fracture toughness were fabricated by curing of each glass ionomer cement previously inserted into a metal mold for the single edge notch specimen according to the ASTME399. They were subjected to a three-point bend test after etching for 0, 30, 60, and 90 seconds at 5 minutes-, 1 hour-and 1 day-lapse after the fabrication of the specimens. The plane strain fracture toughness ($K_{IC}$) was determined by three-point bend test which was conducted with cross-head speed of 0.5 mm/min using Instron universal testing machine (Model No. 1122) following seven days storage of the etched specimens under $37^{\circ}C$, 100% humidity condition. Following conclusions were drawn. 1. In unetched control group, crack was present, but the surface was generally smooth. 2. Deterioration of the surface appearance such as serious dissolving of gel matrix and loss of glass particles occured as the etching time was increased beyond 15 s following Immediate etching of chemical curing type of glass ionomer cements. 3. Etching after 1 h, and 1 d reduced surface damage, 15 s, and 30s etch gave rough surface appearance without loss of glass particle of chemical curing type of glass ionomer cements. 4. Light curing type glass ionomer cement was etched by acid, but there was no difference in surface appearances according to various waiting periods. 5. It was found that the value of plane stram fracture toughness of glass ionomer cements was highest in the light curing filling type as $1.79\;MNm^{-1.5}$ followed by the light curing lining type, chemical curing metal reinforced type, chemical curing filling type and chemical curing lining type. 6. The value of plane stram fracture toughness of the chemical curing lining type glass ionomer cement etched after 5 minutes was lower than those of the cement etched after 1 hour or day or unetched (P < 0.05). 7. Light curing glass ionomer cement showed Irregular fractured surface and chemical curing cement showed smooth fractured surface.

  • PDF

Characteristics of top emission PLED by metal anodes (금속 애노드의 종류에 따른 Top Emission 특성 평가)

  • Lee, Chan-Jae;Moon, Dae-Kyu;Kwak, Min-Gi;Kim, Young-Hoon;Han, Jeong-In
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07b
    • /
    • pp.968-971
    • /
    • 2002
  • Hole injection characteristics have been investigated with various metal anodes such as Ni, Pt, Cu, and AI for the top emission polymer light emitting diodes (PLEDs). Devices were composed of metal anode, Poly(3,4-ethylenedioxythiophene) doped with polystyrene sultponated acid (PEDT:PSS), poly [2-methoxy-5-(2-ethylhexyoxy)-1,4-phenylene-vinylene] (MEH-PPV) and Al cathode. The hole injection from ITO anode has been also investigated for the comparison. The I-V characteristics of the PLEDs with different metal anodes were measured. The work function of the anode is strongly related to the hole injection of the device. The current density of the device with Ni anode with higher work function was higher than that of the device with ITO or AI anode at the same operating voltage.

  • PDF

Singular Stress Field Analysis and Strength Evaluation in Ceramic/.Metal Joints (세라믹/금속접합재의 열사이클피로에 따른 접합계면의 잔류응력분포 특성)

  • 박영철;김현수;허선철;강재욱
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 1996.04a
    • /
    • pp.709-713
    • /
    • 1996
  • The ceramic has such high qualities as light weight, abrasion resistance, heat resistance compared with metal, but since it is breakable, it can't be used as structural material and it is desirable to joining metal which is full of toughness, but, according as the ceramic/metal joint is executed at high temperature, the joint residual stress develops near the joint sides in the process of cooling the high temperature down to the suitable temperature due to difference of the thermal expansion coefficient between ceramic and metal, and the joint residualstress lowers the fracture strength. In this study, to ensure security and improvement of bending strength, 1 studies on see distribution shape of residual stress according to high thermal cycle, and the influnence of theraml cycle and distribution shape of residual stess on joint-strength.

  • PDF

Metal-Semiconductor-Metal Photodetector Fabricated on Thin Polysilicon Film (다결정 실리콘 박막으로 구성된 Metal-Semiconductor-Metal 광검출기의 제조)

  • Lee, Jae-Sung;Choi, Kyeong-Keun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.30 no.5
    • /
    • pp.276-283
    • /
    • 2017
  • A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

Enhanced Light Transmittance of Densely Packed Metal Nanoparticle Layers (밀집된 금속 나노 입자 레이어의 광학 특성)

  • Jeon, Hyunji;Choi, Jinnil
    • Korean Journal of Materials Research
    • /
    • v.30 no.12
    • /
    • pp.701-708
    • /
    • 2020
  • Irradiation of the metal nanoparticles causes local plasmon resonance in a specific wavelength band, which can improve the absorption and scattering properties of a structure. Since noble metal nanoparticles have better resonance effects than those of other metals, it is easy to identify plasmonic reactions and this is advantageous to find the optical tendency. Compared to having a particle gap or randomly arranged particle structures, densely and evenly packed structures can exhibit more uniform optical properties. Using the uniform properties, the structure can be applied to optical filtering applications. Therefore, in this paper, validation tests about metal nanoparticles and thin film structures are conducted for more accurate analysis. The optical properties of monolayer and bilayer noble metal nanoparticle structures with different diameters, packed in a uniform array, are investigated and their optical trends are analyzed. In addition, a thin film structure under identical conditions as metal nanoparticle structure is evaluated to confirm the improved optical characteristics.

A Study on Processing of Auxiliary Electrodes for OLED Lighting Devices Using a Reverse Gravure-Offset or Gravure-Offset Printing (리버스 그라비아 옵셋 또는 그라비아 옵셋 프린팅을 이용한 조명용 OLED 소자 보조전극 형성 공정 연구)

  • Bae, Sung Woo;Kwak, Sun Woo;Kim, In Young;Noh, Yong-Young
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.30 no.6
    • /
    • pp.578-583
    • /
    • 2013
  • The lighting devices using organic light emitting diodes (OLEDs) are actively researched because of the various advantages such as high power efficiency and 2-dimensitonal lighting emitting. To commercialize those OLED lighting devices, the manufacturing cost must be downed to comparable price with conventional light sources. Here, we demonstrate a reverse gravure-offset or gravure off-set printed metal electrode for the auxiliary electrode for OLED lighting devices. For the fabricated OLED's auxiliary electrode, we used Ag nano-paste and printed metal grid structure with a line width and spacing of several ten and hundred micrometer by using gravure-offset printing. In the end the printing metal grid pattern are successfully achieved by optimization of various experimental conditions such as printing pressure, printing speed and printing delay time.

Effects of the length of linkers in metal-azobenzene-metal junction on transmission and ON/OFF ratio

  • Yeo, Hyeonwoo;Kim, Han Seul;Kim, Yong-Hoon
    • Proceeding of EDISON Challenge
    • /
    • 2017.03a
    • /
    • pp.499-505
    • /
    • 2017
  • Photoisomerizing molecules which can transform their structure by the light irradiation have great deal for the application of photo-switching devices. And azobenzene is the representive type of the photoisomerizing molecules. It can transform their trans- structures into cis- structure as the light for certain wave lengths they receive. This property shows the potential of ON/OFF switching functionalization which can be used into the nano scale photo switch. Furthermore, many studies are interested in the organic linkers that connect the azobenzene and metal electrodes. We used S, $CH_2S$, $(CH_2)_4S$ as the linker to watch the influence of linkers for electronic properties. So We suggest a photoswitching device based on the vertical junction using the first-principles calculations with density functional theory and non-equilibrium Greens function (NEGF). By analyzing the electronic structure and tunneling current caused by the structural difference of the system between cis- and trans- azobenzene, the difference in switching mechanism, ON/OFF ratio and transmission will be watched as the linker changes. And finally We will suggest which linker would be the better for the optimal device architecture which can achieve high control of the ON/OFF photocurrent ratio. This result will show the potential of azobenzene-based photoswitch and provide the critical insight in constructing the optimal device architecture.

  • PDF