• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.597-597
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• 2012

A simple solution-based method is developed to deposit crystalline ultrathin (2 nm) nickel hydroxide on vertically grown ZnO nanowires to achieve high specific capacitance and long-term life for flexible and wearable energy storage devices. Ultrathin crystalline $Ni(OH)_2$ enables fast and reversible redox reaction to improve the specific capacitance by utilizing maximum number of active sites for the redox reaction while vertically grown ZnO nanowires on wearable textile fiber effectively transport electrolytes and shorten the ion diffusion path. Under the highly flexible state $Ni(OH)_2$ coated ZnO nanowires electrode shows a high specific capacitance of 2150 F/g (based on pristine $Ni(OH)_2$ in 1 M LiOH aqueous solution with negligible decrease in specific capacitance after 1000 cycles. The synthesized energy-storage electrodes are easy-to-assemble which can provide unprecedented design ingenuity for a variety of wearable and flexible electronic devices.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.303-307
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• 2007

Transparent In-doped zinc oxide (IZO) thin films are deposited with variation of pulsed DC power at Ar atmosphere on coming 7059 glass substrate by pulsed DC magnetron sputtering. A c-axis oriented IZO thin films were grown in perpendicular to the substrate. The optical transmittance spectra showed high transmittance of over 80% in the UV-visible region and exhibited the absorption edge of about 350 nm. Also, the IZO films exhibited the resistivity of ${\sim}10^{-3}{\Omega}\;cm$ and the mobility of ${\sim}6cm/V\;s$. Organic Light-emitting diodes (OLEDs) with IZO/N,N'-diphenyl-N, N'-bis(3-methylphenl)-1, 1'-biphenyl-4,4'-diamine (TPD)/tris (8-hydroxyquinoline) aluminum ($Alq_3$)/LiF/Al configuration were fabricated. LiF layer inserted is used as an interfacial layer to increase the electron injection. Under a current density of $100\;mA/cm^2$, the OLEDs show an excellent efficiency (9.4 V turn-on voltage) and a good brightness ($12000\;cd/m^2$) of the emission light from the devices. These results indicate that IZO films hold promise for anode electrodes in the OLEDs application.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.489-493
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• 1996

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.279-282
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• 2003

For the millimeter-wave dielectrics, Forsterite-based ceramics were produced. Pure forsterite ceramics($Mg_2SiO_4$) shows porous micro-structure and very low Q*f values, which is not suitable for the dielectrics for the millimeter-wave band. Several sintering aids including $Al_2O_3$, $Li_2CO_3$, $Li_2SiO_4$, were added to the forsterite ceramics in order to produce dense low-loss dielectrics. Among these additives, $Li_2CO_3$ is the most effective sintering aids. Several sub-components including NiO, ZnO, $SnO_2$, $TiO_2$, were added to enhance the microwave dielectric properties. $TiO_2$ is the most effective additive to enhance the dielectric properties at microwave bands. The simultaneous addition of $TiO_2$ and $Li_2CO_3$ increases Q*f value over 170,000, which can be used as dielectrics in millimeter-wave bands.

• Membrane Journal
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• v.12 no.2
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• pp.75-89
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• 2002

The effect of addition of inorganic salts in polyethersulfone (PES) polymer solution on the membrane formation and ultrafiltartion performance was studied through the thermodynamic and kinetic properties of casting solution. To control the thermodynamic and kinetic properties of casting solution, various inorganic salts $[CaC1_2, LiCl, LiClO_4, ZnC1_2 $and Mg(ClO_4)_2]$ were added in the PES/NMP solution. Variation of membrane morphology and performance of the resulting membranes with change of the salt type and content added in tasting solution were discussed using viscosity, coagulation value, light transmittance measurement, overall membrane porosity, ultrafiltration experiment and cross-sectional SEM image. For all kind of inorganic salts, according as increase of the salt content in casting solution, viscosity is increased, coagulation value becomes lower, top layer thickness below the skin surface is increased, bovine serum albumin(BSA) rejection decreased and pure water flux is increased except $CaC1_2$ and LiCl. In case of $CaC1_2$ and LiCl, it is found that when the salt content is increased, the formation of macrovoids is suppressed and the precipitation rate becomes slow while instantaneous demixing of precipitation type is maintained. However, in case of $LiClO_4$ and $Mg(ClO_4)_2,$ it is found that precipitation rate becomes faster.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.47-53
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• 2005

The E.M.F. of the galvanic cell with fused salt was measured to determine the activities of zinc at 720-860 K over the entire composition range of liquid Zn-In and Zn-Sn alloys. The cell used was as follows: $$(-)W{\mid}Zn(pure){\mid}Zn^{2+}(KCl-LiCl){\mid}Zn(in\;Zn-In\;or\;Zn-Sn\;alloy){\mid}W(+)$$ The activities of zinc in the alloys showed positive deviation from Raoult's law over the entire composition range. The activity of cadmium and some thermodynamic functions such as Gibbs free energy, enthalpy and entropy were derived from the results by the thermodynamic relationship. The comparison of the results and the literature data was made. The liquid Zn-In and Zn-Sn alloys are found to be close tn the regular solution. The concentration fluctuations in long wavelength limit, $S_{cc}(o)$, in the liquid alloy were calculated from the experimental results.

• Bulletin of the Korean Chemical Society
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• v.18 no.2
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• pp.213-217
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• 1997

Magnesium reduction of Mo(N-C6H3-2,6-i-Pr2)2Cl2(DME) in the presence of trimethylphosphine led to a mixture of Mo(N-C6H3-2,6-i-Pr2)(PMe3)2Cl3, 1, and Mo2(PMe3)4Cl4, 2. In solution 1 is slowly air-oxidized to Mo(N-2,6-i-Pr2-C6H3)(OPMe3)(PMe3)Cl3, 3. 1 is chemically inert to carbon nucleophiles (ZnMe2, ZnEt2, AlMe3, AlEt3, LiCp, NaCp, TlCp, NaCp*, MeMgBr, EtMgBr), oxygen nucleophiles (LiOEt, LiO-i-Pr, LiOPh, LiOSPh), and hydrides (LiBEt3H, LiBEt3D). Crystal data for 1: orthorhombic space group P212121, a=11.312(3) Å, b=11.908(3) Å, c=19.381(6) Å, Z=4, R(wR2)=0.0463 (0.1067). Crystal data for 2: monoclinic space group Cc, a=18.384(3) Å, b=9.181(2) Å, c=19.118(3) Å, b=124.98(1)°, Z=4, R(wR2)=0.0228 (0.0568). Crystal data for 3: orthorhombic space group P212121, a=11.464(1) Å, b=14.081(2) Å, c=16.614(3) Å, Z=4, R(wR2)=0.0394 (0.0923).

• Bulletin of the Korean Chemical Society
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• v.27 no.8
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• pp.1206-1210
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• 2006

Four isostructural amino-acid-based polyoxomolybdates, {$M(H_2O)_3(pro)Mo_4O_{13}$}$_2{\cdot}2H_2O$ (pro = proline, M = Co (1), Ni (2), Cu (3), Zn (4)), have been synthesized and structurally characterized by single crystal X-ray diffraction, elemental analysis, IR spectrum, TG analysis. The structures of 1-4 are layered networks built up from {$Mo_8O_{26}(pro)_2$}$^{4-}$ units and {$M(H_2O)_3O_3$} octahedra, the uncoordinated water molecules occupying the interlayer regions.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.175-178
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• 1997

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.60-63
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) and the effect of additive gases in a $Cl_2$-based inductively coupled plasma. The inert gases were argon, nitrogen, and helium. The maximum etch rates were 44.3, 39.9, and 37.9 nm/min for $Cl_2$(75%)/Ar(25%), $Cl_2$(50%)/$N_2$(50%), and $Cl_2$(75%)/He(25%) gas mixtures, 600 W radiofrequency power, 150 W bias power, and 2 Pa process pressure. We obtained the maximum etch rate by a combination of chemical reaction and physical bombardment. A volatile compound of Zn-Cl. achieved the chemical reaction on the surface of the ZnO thin films. The physical etching was performed by inert gas ion bombardment that broke the Zn-O bonds. The highly oriented (002) peak was determined on samples, and the (013) peak of $Zn_2SiO_4$ was observed in the ZnO thin film sample based on x-ray diffraction spectroscopy patterns. In addition, the sample of $Cl_2$/He chemistry showed a high full-width at half-maximum value. The root-mean-square roughness of ZnO thin films decreased to 1.33 nm from 5.88 nm at $Cl_2$(50%)/$N_2$(50%) plasma chemistry.