• 제목/요약/키워드: Lee O-Young

검색결과 5,842건 처리시간 0.037초

AC PDP에서 $SiO_2$가 첨가된 MgO 보호막의 방전 특성 연구 (A study on discharge characteristics of protective layer MgO with $SiO_2$ doped)

  • 이영권;박미영;박차수;김동현;이호준;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 C
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    • pp.1683-1685
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    • 2003
  • MgO is making an important role not only as a protective layer but also improves the discharge characteristics at AC PDP. Until now, the substitute of protective layer, MgO has been studied in many ways, but it's too difficult to get a new substitute as stable as MgO. But some problems has been advanced at the discharge characteristics of MgO on high temperature. So we studied the discharge characteristics of impure MgO with $SiO_2$ doped.

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Bipolar pulse power를 사용하여 증착한 MgO 박막의 특성에 관한 연구 (A study on the Characteristics of MgO Thin Films Deposited by Bipolar pulse power)

  • 김영수;김성찬;송근영;최훈영;정해영;서정현;이석현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.167-169
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    • 2003
  • AC PDP(Plasma Display panel)에서 MgO 보호막은 방전공간에 직접 노출되어 있기 때문에, AC PDP의 수명과 방전 특성이 직접적인 영향을 미친다. 그동안 보다 좋은 특성의 MgO 보호막을 증착하기 위한 연구가 Magnetron-sputtering, E-beam, ion-plating 등 여러 가지 방법에 의해 진행되어 왔다. 본 논문에서는 Bipolar pulse power를 사용하여 sputtering 방법으로 MgO 보호막을 증착하여, 그 전기적, 광학적 특성을 기존의 magnetron-sputtering 방법으로 증착한 MgO 보호막과 비교하였다. 그 결과 Bipo1ar pulse power를 이용한 MgO 보호막의 결정립이 더 크게 나타났으며 그것으로부터 AC PDP의 수명향상에 효과가 있을 것으로 사료된다.

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Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress

  • Kwak, Ho-Young;Kwon, Sung-Kyu;Kwon, Hyuk-Min;Sung, Seung-Yong;Lim, Su;Kim, Choul-Young;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권5호
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    • pp.543-548
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    • 2014
  • In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.

The Outgasing characteristics of MgO film for protecting layer of plasma display panel

  • Song, Byoung-Kwan;Lee, Young-Joon;Lee, Chang-Heon;Hwang, Hyun-Ki;Yeom, Guen-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.621-624
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    • 2002
  • In this study, outgassing characteristics of MgO films, and the plasma cleaning effects of the deposited MgO films by atmospheric pressure plasma on outgassing rate were compared. The MgO layer was heated up to 350 $^{\circ}C$ and the outgassing characteristics were observed for the heated conditions. As the main impurity species $H_2,\;H_2O,\;N_2,\;CO_2,\;and\;H_2O$ were released from this panel. Impurity species of plasma treatment panel were lower than non-treated panels for the heating temperature

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PLD법으로 제조된 $CuSb_2O_6-SnO_2$ 박막의 전기.광학적 특성 (Preparation and Properties of $CuSb_2O_6$-doped $SnO_2$ Thin Films by Pulsed Laser Deposition)

  • 이채종;변승현;이희영;허영우;이준형;김정주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.262-263
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    • 2007
  • Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

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Supercapacitor용 $LiMn_2O_4$+Activated Carbon 전극의 전기화학적 특성 (Electrochemical Characteristics of $LiMn_2O_4$+Activated Carbon Electrode for Supercapacitor)

  • 전민제;이선영;김익준;문성인;임영택;이상현;이문배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.595-596
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    • 2005
  • This research which it sees adds $LiMn_2O_4$ in the activated carbon electrode the test against the effect which it follows is. Test cells, which were $LiMn_2O_4$fabricated with active mass composite consisted of (100-X)% of MSP-20 and (X)% of $LiMn_2O_4$ (X=20,40,60,80,100), exhibits the better specific capacitance than those of the cells fabricated with single active mass that is MSP-20. The enhanced properties of composite active mass could be caused by capability of $LiMn_2O_4$ powders. But the resistance was increase by proportionate in $LiMn_2O_4$ addition and when mixture ratio of the activated carbon and the $LiMn_2O_4$ being similar, to be low rather to the after where had become the maximum it came.

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