A study on discharge characteristics of protective layer MgO with $SiO_2$ doped

AC PDP에서 $SiO_2$가 첨가된 MgO 보호막의 방전 특성 연구

  • Lee, Young-Kwon (Department of Electric Engineering, Pusan National University) ;
  • Park, Mi-Young (Department of Electric Engineering, Pusan National University) ;
  • Park, Cha-Soo (Department of Electric Engineering, Pusan National University) ;
  • Kim, Dong-Hyun (Department of Electric Engineering, Pusan National University) ;
  • Lee, Ho-Jun (Department of Electric Engineering, Pusan National University) ;
  • Park, Chung-Hoo (Department of Electric Engineering, Pusan National University)
  • Published : 2003.07.21

Abstract

MgO is making an important role not only as a protective layer but also improves the discharge characteristics at AC PDP. Until now, the substitute of protective layer, MgO has been studied in many ways, but it's too difficult to get a new substitute as stable as MgO. But some problems has been advanced at the discharge characteristics of MgO on high temperature. So we studied the discharge characteristics of impure MgO with $SiO_2$ doped.

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