• Proceedings of the Korean Radioactive Waste Society Conference
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• 2016.05a
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• pp.235-236
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• 2016

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2016.10a
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• pp.131-132
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• 2016

• ETRI Journal
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• v.38 no.5
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• pp.972-980
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• 2016

An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial $0.25-{\mu}m$ AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange-couplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.6
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• pp.451-458
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• 2020

In this study, a trade-off analysis of a power conversion system (PCS) is performed in accordance with a power semiconductor device to establish the suitable operating frequency range for the anyplace induction heating system. A resonant network is designed under each operating frequency condition to compare and analyze the PCS losses depending on the power semiconductor device. On the basis of the simulation results, the PCS losses and frequency condition are calculated. The calculated results are then used for a trade-off analysis between Si-MOSFET and GaN-HEMT based on PCS. The suitable operating frequency range is determined, and the validity of the analysis results is verified by the experiment results.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.11a
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• pp.72-72
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• 2006

• 대한핵의학회:학술대회논문집
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• 2005.11a
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• pp.334.1-334.1
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• 2005

• The Korean Journal of Nuclear Medicine
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• v.22 no.1
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• pp.77-81
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• 1988

Tumor localizing properties of $^{67}Ga$ citrate and $^{169}Yb$ citrate were studies with sarcoma 180 bearing mice. To compare precisely the accumulation of $^{67}Ga$ citrate and $^{169}Yb$ citrate in tumor tissue itself, $^{67}Ga$ and l63yb were administered simultaneously as a mixture of same chemical form of citrate. The yield of $^{169}Yb$ labeled citrated and the of radiopharmaceuticals purity was identified more than 90% by chromatography on silica gel plates. $^{67}Ga$ and $^{169}Yb$ were injected into mice and the mice were killed at 3, 24, and 48 hours following intraperitoneal injection of the radiopharmaceuticals. The retention value of $^{67}Ga$ and $^{169}Yb$ in tumor was similar but they differ from each other markedly in normal tissue distribution. $^{169}Yb$ citrate is cleared up from blood more rapidly than $^{67}Ga$ citrate, and a high tumor to blood ratio is achieved shortly after injection.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.1
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• pp.68-73
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• 1990

GaAs epilayer was grown on Si(100) substrate using the two-step growth method by MBE. The crystal growth mode have been investigated by RHEED. The hydrogenation effects of GaAs epilayer were studied by DLTS and Raman spectroscopy. The four electron traps in GaAs/Si layer were observed and their activation energy ranged from 0.47 eV to 0.81 eV below the conduction band. After hydrogenation at 250\ulcorner for 3 hours, new trap not observed and electron traps at Ec-0.68, 0.54 and 0.47 eV were almost passivated. Whereas the Ec-0.81 eV level showed no significant change in concentration. From Raman measurement, GaAs epilayer is found to be influenced by the tensile stress.

• Corrosion Science and Technology
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• v.10 no.2
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• pp.71-75
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• 2011

Corrosion properties of Al-0.3Ga-0.3Sn, Al-0.3Mn-0.3Ga, and Al-0.3Mn-0.3Sn alloys were examined to develop an anode material for Al-air battery with alkaline aqueous or ethanol electrolyte. The results of potentiodynamic polarization tests showed that the electrode potential of the Al alloys were lower than the pure Al, implying the cell voltage can be increased by using one of these alloys for an anode in 4 M KOH aqueous solution. The corrosion rate appeared to be increased by alloying Ga but to be reduced by Sn and Mn in the aqueous solution. The ethanol solution is expected to improve the cell performance in that the electrode potential and the corrosion rate of Al were lower in ethanol solution than in aqueous solution. However the Al-(Ga, Sn, Mn) alloys are not favorable in ethanol solution because of the high potential and corrosion rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.155-155
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• 2011

반도체 양자링은 양자점과 같이 효율이 높은 광학 소자 및 전자 소자에 응용 가능할 뿐 아니라, 양자점과는 다른 흥미로운 현상 연구가 가능하기 때문에 지속적으로 연구되고 있는 양자 구조이다. 특히, 반도체 양자링은 다양한 양자 구조를 형성하기 위한 기초 구조로 사용될 수 있으므로, 반도체 양자링 구조의 형성 메카니즘을 연구하는 것 또한 중요하다. 본 연구에서는 Molecular Beam Epitaxy (MBE)를 이용하여 N-type (100) GaAs 기판 위에 GaAs 양자 구조를 형성하였다. As4 분압의 영향, 즉 3-5 ratio가 표면 양자 구조 변화에 미치는 영향을 관찰하기 위해 3족과 5족을 분리하여 성장하는 전형적인 성장 방식인, droplet epitaxy mode를 사용하였다. 성장 온도, Ga metal droplet 밀도 등의 조건을 고정하고 Arsenic 분압을 1e-5 torr부터 3e-8 torr로 감소시켰을 때 표면 이미지를 AFM과 SEM으로 관찰하였다. As4 분압이 1e-5 torr일 때 양자점의 표면 형상을 보여주다가 As4 분압을 줄여갈수록 양자점의 크기가 증가하면서 As4 분압 1e-6 torr에서는 SEM 이미지 상으로도 분명한 양자링을 관찰할 수 있었다. 특히 주목할 것은 As4 분압 1e-6 torr에서 더 줄여갈수록 양자링 중앙 부분의 낮은 부분이 점점 넓어졌다는 점이다. 이것은 As4 분압 1e-6 torr 이상의 조건이 As4와 Ga atom이 결합하여 GaAs 양자점을 형성하는데 적절한 3-5 ratio의 조건인 반면, 그보다 적은 As4 분압에서는 As4와 결합하지 못한 Ga atom의 표면 migration에 의한 driving force로 인해 양자링이 형성되었다고 추측할 수 있다. 이렇게 형성된 양자링을 열처리 후 macro-PL 측정을 통해 광학적 특성을 보고자 하였다. 그 결과 같은 조건에서 열처리되어 PL 측정한 양자점의 에너지에 비해 peak position이 blue shift한 것을 볼 수 있었다. 이것은 As4를 제외한 같은 조건에서 성장된 양자 구조에서 양자링의 경우 양자점에 비해 그 높이가 낮음을 추측해 볼 수 있다. 양자 구조의 모양과 광학 특성의 관계를 밝히기 위해 추후 추가 측정 및 분석이 필요할 것이다.