Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 27 Issue 1
- /
- Pages.68-73
- /
- 1990
- /
- 1016-135X(pISSN)
Hydrogenation on Defect Levels of GaAs Epilayer on Si
Si 위에 성장시킨 GaAs 에피층의 Defect Level에 대한 수소화
- Bae, In-Ho (Dept. of Phys., Yeungnam Univ.) ;
-
Kang, Tae-Won
(Dept. of Phys., Dongguk Univ.)
;
- Hong, Chi-Yhou (Dept. of Phys., Dongguk Univ.) ;
-
Leem, Jae-Young
(Dept. of Phys., Dongguk Univ.)
;
- Cho, Sung-Hwan (Dept. of Phys., Dongguk Univ.) ;
-
Jang, Jin
(Dept. of Phys., Kyunghee Univ.)
;
- Lee, Wan-Ho (Dept. of Phys., Chungang Univ.)
- 배인호 (영남대학교 물리학과) ;
-
강태원
(동국대학교 물리학과)
;
- 홍치유 (동국대학교 물리학과) ;
-
임재영
(동국대학교 물리학과)
;
- 조성환 (동국대학교 물리학과) ;
-
장진
(경희대학교 물리학과)
;
- 이완호 (중앙대학교 물리학과)
- Published : 1990.01.01
Abstract
GaAs epilayer was grown on Si(100) substrate using the two-step growth method by MBE. The crystal growth mode have been investigated by RHEED. The hydrogenation effects of GaAs epilayer were studied by DLTS and Raman spectroscopy. The four electron traps in GaAs/Si layer were observed and their activation energy ranged from 0.47 eV to 0.81 eV below the conduction band. After hydrogenation at 250\ulcorner for 3 hours, new trap not observed and electron traps at Ec-0.68, 0.54 and 0.47 eV were almost passivated. Whereas the Ec-0.81 eV level showed no significant change in concentration. From Raman measurement, GaAs epilayer is found to be influenced by the tensile stress.
Keywords