• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.23-30
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• 2012

This paper proposes a novel adaptive header-based power gating structure to compensate for the performance loss and the increased wake-up time of the power gating structures induced by the negative bias temperature instability (NBTI) effect. The proposed structure consists of variable width footers based on the two-pass power gating and a new NBTI sensing circuit for an adaptive control. The simulation results of the proposed structure are compared to those of power gating without the adaptive control and show that both the circuit-delay and wake-up time dependence of the power gating structure on the NBTI stress is minimized with only 3% and 4% increase, respectively while keeping small leakage power and rush-current. In this paper, a 45 nm CMOS technology and predictive NBTI model have been used to implement the proposed circuits.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.354-362
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• 2017

We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of $114{\mu}A$ at -15 V, a breakdown voltage of 794 V.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.19-26
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• 2010

We found that saturated water vapor pressure is the most dominant stress factor for the degradation phenomenon in the package for high-power phosphor-converted white light emitting diode (high power LED). Also, we proved that saturated water vapor pressure is effective acceleration stress of LED package degradation from an acceleration life test. Test conditions were $121^{\circ}C$, 100% R.H., and max. 168 h storage with and without 350 mA. The accelerating tests in both conditions cause optical power loss, reduction of spectrum intensity, device leakage current, and thermal resistance in the package. Also, dark brown color and pore induced by hygro-mechanical stress partially contribute to the degradation of LED package. From these results, we have known that the saturated water vapor pressure stress is adequate as the acceleration stress for shortening life test time of LED packages.

• Journal of the Korean Society of Safety
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• v.30 no.1
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• pp.14-20
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• 2015

A Large Eddy Simulation(LES) was performed for the prediction of unsteady dispersion behavior of hydrogen fluoride (HF). The HF leakage accident occurred at the Gumi fourth industrial complex was numerically investigated using the Fire Dynamics Simulator (FDS) based on the LES. The accident area was modeled three-dimensionally and time-varying boundary conditions for wind were adopted in the simulation for considering the realistic accident conditions. The Message Passing Interface (MPI) parallel computation technique was used to reduce the computational time. As a result, it was found that the present LES simulation could predict the unsteady dispersion features of HF near the accident area effectively. The dispersion behaviors of the leaked HF was much affected by the unsteady wind direction. The LES could predict the time variation of the HF concentration reasonably and give an useful information for the risk analysis while the prediction with the time-averaging concept of HF concentration had a limitation for the amount of HF concentration at specific location point. It was identified that the LES is very useful to predict the dispersion characteristics of hazardous chemicals.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.5
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• pp.384-390
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• 2016

It is important to have a pipeline leak-detection system that determines the presence of a leak and quickly identifies its location. Current leak detection methods use a acoustic emission sensors, microphone arrays, and camera images. Recently, many researchers have been focusing on using cameras for detecting leaks. The advantage of this method is that it can survey a wide area and monitor a pipeline over a long distance. However, conventional methods using camera monitoring are unable to target an exact leak location. In this paper, we propose a method of detecting leak locations using leak-detection results combined with multi-frame analysis. The proposed method is verified by experiment.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.1
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• pp.31-36
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• 2002

Low energy boron ions were implanted into the preamorphized and crystalline silicon substrates to form 0.2${\mu}m$ $p^+-n$ junctions. The rapid thermal annealing(RTA) was used to annihilate the crystal defects due to implantation and to activate the implanted boron ions, and the furnace annealing was employed to reflow the BPSG(bolo-phosphosilicate glass). The implantation conditions for Gepreamorphization were the energy of 45keV and the dose of 3$\times$1014cm-2. BF2 ions employed as a p-type dopant were implanted with the energy of 20keV and the dose of 2$\times$1015cm-2. The thermal conditions of RTA and furnace annealing were $1000^{\circ}C$/10sec and $850^{\circ}C$/40min, respectively. The junction depths were measured by SIMS and ASR techniques, and the 4-point probe was used to measure the sheet resistances. The electrical characteristics were analyzed via the leakage currents of the fabricated diodes. The single thermal processing with RTA produced shallow junctions of good qualities, and the thermal treatment sequence of furnace anneal and RTA yielded better junction characteristics than that of RTA and furnace anneal.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Journal of Environmental Health Sciences
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• v.46 no.5
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• pp.588-598
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• 2020

Objectives: Human indices were developed to determine returning point of residents and damage restoration after the chemical accident Methods: To determine the returning point of residents after the chemical accident, a new concept, the standard man model was introduced as a human index, in which both H-code and its acute effects were main idea. To evaluate the applicability, a hydrogen fluoride leakage accident in Gumi was applied. The returning point were suggested as the conservative remission period of acute effects among relevant hazard effects and compared with actual returning point. The coverage of each age group were considered with reflecting average daily dose expected for actual residents. In addition, a relief-index as a social-scientific approach was reflected as well to apply the damage restoration Results: Actual returning point of residents in Gumi was 88 days; and that of standard man model suggested was 84 days. The expected amount of exposure at aged 12 or under was at least 2.35 times greater than that of this model, 40s, theoretically. However, their population ratio was less than 1%, so 99% of residents could be applied when the standard man model was applied. The relief-index was as an objective and quantitative methodology to apply the qualitative aspect. Conclusions: Although evaluated as a relatively positive result, there was a limitation such as the number of accident applied to the verification of standard man model. The relief index was also considered, but further research should be carried out to find threshold level for the relief.