• 한국진공학회지
• /
• 제7권s1호
• /
• pp.106-117
• /
• 1998

Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.

• 전기학회논문지
• /
• 제66권5호
• /
• pp.800-805
• /
• 2017

The accelerated thermal ageing of CSPE (chlorosulfonated polyethylene) was carried out for 16.82, 50.45, and 84.09 days at $110^{\circ}C$, equivalent to 20, 60, and 100 years of ageing at $50^{\circ}C$ in nuclear power plants, respectively. As the accelerated thermally aged years increase, the insulation resistance and resistivity of the CSPE decrease, and the capacitance, relative permittivity and dissipation factor of those increase at the measured frequency, respectively. As the accelerated thermally aged years and the measured frequency increase, the phase degree of response voltage vs excitation voltage of the CSPE increase but the phase degree of response current vs excitation voltage decrease, respectively. As the accelerated thermally aged years increase, the apparent density, glass transition temperature and the melting temperature of the CSPE increase but the percent elongation and % crystallinity decrease, respectively. The differential temperatures of those are $0.013-0.037^{\circ}C$ and, $0.034-0.061^{\circ}C$ after the AC and DC voltages are applied to CSPE-0y and CSPE-20y, respectively; the differential temperatures of those are $0.011-0.038^{\circ}C$ and $0.002-0.028^{\circ}C$ after the AC and DC voltages are applied to CSPE-60y and CSPE-100y, respectively. The variations in temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE. It is found that the dielectric loss owing to the dissipation factor($tan{\delta}$) is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the partial separation of the branch chain of CSPE polymer as a result of thermal stress due to accelerated thermal ageing.

• 한국세라믹학회지
• /
• 제32권3호
• /
• pp.371-377
• /
• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• 한국전기전자재료학회논문지
• /
• 제27권9호
• /
• pp.547-550
• /
• 2014

In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.197-197
• /
• 2010

Pb(Zr,Ti)O3/BiFeO3/(PZT/BFO) multilayer thin films were coated on Pt/Ti/SiO2/Si substrates by chemical solution deposition. With increasing the annealing temperature, the dielectric and leakage current density properties of multilayered PZT/BFO/PZT thin films were improved. The current density of the PZT/BFO/PZT filmannealing at $600^{\circ}C$ was about 189.39(x10-9A/cm2) at 10V. The relative dielectric constant and the dielectric loss of the PZT/BFO/PZT thin film annealing at $600^{\circ}C$ were about 318 and 0.161%, respectively.

• 반도체디스플레이기술학회지
• /
• 제18권2호
• /
• pp.98-102
• /
• 2019

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

• 전기화학회지
• /
• 제4권3호
• /
• pp.113-117
• /
• 2001

탄소계 전극을 사용하는 EDLC(Electric Double Layer Capacitor)용의 축전용량과 충방전속도는 전해질의 종류, 충방전 조건 그리고 탄소계 물질의 물리화학적 성질에 따라 크게 달라질 수 있다. 이에 본 연구에서는 dip coating method에 의해 제조된 EDLC용 활성탄소 전극에서 유기 전해질의 종류를 달리하여 충방전 실험과 전기화학적인 실험을 시행하였다. 또한 충전전류밀도와 방전전류밀도의 변화에 따른 비축전 용량의 변화를 조사하였고, 최적 유기전해질의 조건에서 leakage current 특성, 자가방전 특성 그리고 시간전압곡선을 기존의 $1M-Et_4NBF_4/PC$와 비교하였다 활성탄, 소전극으로 비표면적이 $2000m^2/g$인 MSP-20을 사용하고 유기전해질로는 $1M-LiPF_6/PC-DEC(1:1)$를 사용한 EDLC에서 130 F/g 정도의 우수한 비축전 용량을 나타내었고 저항면에서도 가장 낮은 수치를 나타내었다 $1M-LiPF_6/PCDEC(1:1)$를 사용한 EDLC는 15분동안 0.0004A의 낮은 leakage current와 100시간 경과 후 0.8V의 우수한 자가 방전 특성 그리고 IR-drop이 적은 선형의 시간-전압곡선을 보여주었다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 하계학술대회 논문집 C
• /
• pp.1582-1584
• /
• 2004

The microstructure, electrical, and clamping voltage characteristics of ZPCCY-based varistor ceramics were investigated in the sintering time range of 1${\sim}$3 h. Increasing sintering time promoted the densification, in which the average grain size and density are increased in the range of $11.4{\sim}16.0{\mu}m$ and $5.34{\sim}5.54g/cm^3$, respectively. The nonlinear exponent decresed in the range of 60${\sim}$26 and the leakage current increased in the range of $1.3{\sim}10.7{\mu}A$ with increase of sintering time. The clamping voltage ratio was less than 2 for ratio surge current of 10 A over sintering times.

• E2M - 전기 전자와 첨단 소재
• /
• 제16권9호
• /
• pp.65.2-65
• /
• 2003

Praseodymium oxid ($Pr_2$$O_3$) thin films have been deposited on Si(100) substrates by metalorganic chemical vapor deposition using praseodymium tris-2,2,6,6-tetramethyl-3,5-heptandionate as source material. Film structural, morphological, and compositional characterizations have been carried out. Dielectric properties have been studied as well by capacitance-voltage and current-voltage measurements on metal-oxide-semiconductor capacitors of several areas. The $Pr_2$$O_3$ films have shown a dielectric constant = 23-25 and a leakage current density of $8.8{\times}10$-e $A/\textrm{mm}^2$ at ＋1 V.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2008년도 추계학술대회A
• /
• pp.1210-1214
• /
• 2008

Electro-pneumatic servo valve is an electro-mechanical device which converts electric signal into pneumatic flow rate or pressure. In order to improve the overall performance of pneumatic servo systems, electro-pneumatic servo valves are required, which have fast dynamic characteristic, no air leakage at null, and can be fabricated at a low-cost. The first objective of this research is to design and fabricate a new electro-pneumatic servo valve which satisfies the above-mentioned requirements. In this paper, we has been modeled as a system consisting of coupled electro-mechanic and mechanical subsystems. The appropriateness of the model has been verified by simulation. The simulation model resolves the valve body motion and the solenoid current at high accuracy. Also, we are calculate the displacement of spool and computed results show winding currents, magnetic actuator force, flux density line, displacement, velocity, back EMF, eddy current etc.