• Economic and Environmental Geology
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• v.43 no.6
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• pp.565-571
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• 2010

An innovative application of surfactant-enhanced air sparging(SEAS) technique was developed in this study. Using a laboratory-scale physical model packed with water-saturated sand, air sparging was implemented to remove water-dissolved toluene that was introduced into a specific depth of the system with finite vertical width prior to sparging. An anionic surfactant(Sodium dodecylbenzene sulfonate) was introduced into the contaminated layer as in dissolved form in the toluene-contaminated solution for SEAS, whereas no surfactant was applied in the control experiment. Due to the suppressed surface tension of water in the surfactant(and toluene)-containing region, the toluene removal rate increased significantly compared to those without surfactant. More than 70% of the dissolved toluene was removed from the contaminated layer for SEAS application while less than 20% of toluene was removed for the experiment without surfactant. Air intrusion into the contaminated layer during sparging was found to be more effective than that without surfactant, enhancing air contact with toluene-contaminated water, which resulted in improved volatilization of contaminant. This new method is expected to open a new option for remediation of VOC(volatile organic compound)-contaminated aquifer.

• ETRI Journal
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• v.38 no.4
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• pp.675-684
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• 2016

This paper demonstrates the effect of fluoride-based plasma treatment on the performance of $Al_2O_3/AlGaN/GaN$ metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) with a T-shaped gate length of $0.20{\mu}m$. For the fabrication of the MISHFET, an $Al_2O_3$ layer as a gate dielectric was deposited using atomic layer deposition, which greatly decreases the gate leakage current, followed by the deposition of the silicon nitride layer. The silicon nitride layer on the gate foot region was then selectively removed through a reactive ion etching technique using $CF_4$ plasma. The etching process was continued for a longer period of time even after the complete removal of the silicon nitride layer to expose the $Al_2O_3$ gate dielectric layer to the plasma environment. The thickness of the $Al_2O_3$ gate dielectric layer was slowly reduced during the plasma exposure. Through this plasma treatment, the device exhibited a threshold voltage shift of 3.1 V in the positive direction, an increase of 50 mS/mm in trans conductance, a degraded off-state performance and a larger gate leakage current compared with that of the reference device without a plasma treatment.

• Archives of Plastic Surgery
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• v.38 no.5
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• pp.715-717
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• 2011

Purpose: In cases of breast reconstruction with a free transverse rectus abdominis musculocutaneous (TRAM) flap after skin-sparing mastectomy with nipple-areolar complex (NAC) removal, the flat contour of the flap's skin paddle can easily look unnatural and dissatisfying. Reconstructed NAC on the flap surface lacks the elevated contour that the normal areola possesses, resulting in an unnatural final result. Therefore, we would like to introduce a novel method to improve this problem and report the satisfactory results we obtained. Methods: Operations were conducted on 19 patients who underwent immediate breast reconstruction with a free TRAM flap and skin-sparing mastectomy from January 2009 to January 2010, with a mean follow-up of nine months. While the TRAM free flap was being inset, a purse-string suture was carried out on the dermal layer of skin flap to create a slight protrusion with Gore-$Tex^{(R)}$ sutures. Results: The elevated mound surrounding the NAC was well maintained for an average follow-up period of nine months. Nipple projection was also well maintained. There was no complaint about breast contour or nipple height reduction. In addition, there was no reported incidence of other complications. Conclusion: The purse-string suture technique presents a more natural breast silhouette around the NAC and helps to maintain nipple projection. Furthermore, it does not require any supplementary incisions or complicated skills. There has been no report of additional complications using this technique.

• Journal of Korean Society on Water Environment
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• v.23 no.5
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• pp.665-675
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• 2007

In-situ Air Sparging (IAS, AS) is a remediation technique in which organic contaminants are volatilized from saturated zone to unsaturated layer. This study focuses on the removal and interaction of Volatile Organic Compounds (VOCs) and $CO_2$, and Total Petroleum Hydrocarbon (TPH) in saturated and unsaturated, and air space zone on the unsaturated soil surface. Soil sparging temperature of hot air has risen to $34.9{\pm}2.7^{\circ}C$ from $23.0{\pm}1.9^{\circ}C$ for 36 days. At the diffusing point, fluid TPH concentrations were reduced to 78.7% of the initial concentration in saturated zone when hot air was sparged. The TPH concentrations were decreased to 66.1% for room temperature air sparging. The amount of VOCs for hot air sparging system, in air space, was approximately 26% larger than constant air sparging system. The amount of $CO_2$ was 4,555 mg (in unsaturated zone) and 4,419 mg (in air space) when hot air was sparged was 3,015 mg (in unsaturated zone) and 3,634 mg (in air space) for room air temperature in the $CO_2$ amount. The removals of VOCs and biodegradable $CO_2$ through the hot air sparging system (modified SVE) were more effective than the room temperature air sparging. The regression equation were $Y=976.4e^{-0.015{\cdot}X}$, $R^2=0.98$ (hot air sparging) and $Y=1055e^{-0.028{\cdot}X}$, $R^2=0.90$ (room temperaure air sparging). Estimated remediation time was approximately 500 days, if final saturated soil TPH concentration was set to 1.2 mg/L application of tail effect.

• Advances in materials Research
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• v.6 no.2
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• pp.169-184
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• 2017

Electro-Discharge machining (EDM) is a thermal process comprising a complex metal removal mechanism. This method works by forming of a plasma channel between the tool and the workpiece electrodes leading to the melting and evaporation of the material to be removed. EDM is considered especially suitable for machining complex contours with high accuracy, as well as for materials that are not amenable to conventional removal methods. However, several phenomena can arise and adversely affect the surface integrity of EDMed workpieces. These have to be taken into account and studied in order to optimize the process. Recently, artificial neural networks (ANN) have emerged as a novel modeling technique that can provide reliable results and readily, be integrated into several technological areas. In this paper, we use an ANN, namely, the multi-layer perceptron and the back propagation network (BPNN) to predict the mean surface roughness of electro-discharge machined surfaces. The comparison of the derived results with experimental findings demonstrates the promising potential of using back propagation neural networks (BPNNs) for getting a reliable and robust approximation of the Surface Roughness of Electro-discharge Machined Components.

• Restorative Dentistry and Endodontics
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• v.13 no.1
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• pp.79-89
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• 1988

The purpose of this study was to evaluate the canal preparation time, deviation of the apex (Zipping), and debridement effect of the canal of three canal preparation techniques. Thirty extracted 1st and 2nd molars were divided into 3 groups and each group was enlarged by ultrasonic, sonic or hand instrument. The specimens were examined under scanning electron microscope and light microscope. The results were as follows: 1. In the canal preparation time, ultrasonic group was the shortest, followed by sonic, hand group. All pairs of groups were significantly different at the 0.05 level. (P < 0.05) 2. In the deviation of the canal, no two groups were significantly different at the 0.05 level. (P > 0.05) 3. In the evaluation of debris scores, ultrasonic and sonic groups were better debridement effect than hand group in the fine canals. In the large canals, ultrasonic group was the best results, followed by sonic, hand group. 4. In the evaluation of smear layer scores, ultrasonic group was the best and sonic and hand group were same effect in the fine canals. In the large canals, three groups were same effect. 5. In the effect of the removal of predentin and pulpal debris, in the regardless of canal size, three groups were same and pulpal debris was not completely removed by either technique.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.8 s.179
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• pp.1958-1967
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• 2000

Rapid Prototyping( RP ) has been increasingly applied in the process of design and development of new products. RP can shrink the time and expense required to bring a new product from initial concept to production. However, the necessity of using RP for short-run manufacturing is continuously driving a development of a cost-effective technique that will produce completely-finished quality parts in a very short time. To meet these demands, the improvements in production speed, accuracy materials, and cost are crucial. Thus, a new hybrid-RP system performing both deposition and machining in a station is proposed in this paper. It incorporates both material deposition in layers and material removal from the outer surface of the layer to produce the required surface finish. The new hybrid-RP system can dramatically reduce the total build time and fabricate largo-sized and freeform objects because it uses very thick layers, i.e.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.808-809
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• 2008

22.9kV 50MVA HTS power cable has been developed and tested by Korea Electrotechnology Research Institute and LS Cable Company and it was supported by a grant from Center for Applied Superconductivity Technology of the 21st Century Frontier R&D Program. In this paper, DC Ic of 100m HTS cable which is installed at Kochang testing station was measured and analyzed. A measurement technique of DC Ic used by resistance and inductance removal method is established. The HTS power cable is composed of 2 layers for transmission and 1 layer for shield. For the analysis of AC losses in an HTS power cable, 2-dimensional numerical calculation was carried out to define the magnetic field distribution. We calculated the magnetization losses in the HTS core of that cable from these fields. These calculated results are in accordance with those of experiment.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.27.2-27.2
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• 2010

In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at $50^{\circ}C$. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of $Si_3N_4$ (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.424-432
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• 2000

The plasma surface treatment, using hydrogen gas, of the silicon wafer was investigated as a pretreatment for the application to silicon-on-insulator (SOI) wafers using the silicon direct bonding technique. The chemical reactions of hydrogen plasma with surfaces were used for both the surface activation and the removal of surface contaminants. As a result of exposure of silicon wafer to the plasma, an active oxide layer was formed on the surface, which was rendered hydrophilic. The surface roughness and morphology were estimated as functions of plasma exposing time as well as of power. The surface became smoother with decreased incident hydrogen ion flux by reducing plasma exposing time and power. This process was very effective to reduce the carbon contaminants on the silicon surface, which was responsible for a high initial surface energy. The initial surface energy measured by the crack propagation method was 506 mJ/m2, which was up to about three times higher than that of a conventional RCA cleaning method.