• Journal of the Korean Society of Safety
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• v.18 no.3
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• pp.60-63
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• 2003

For the increase the charge stability of teflon electrets for used at uncomfortable industrial circumstances with high temperature or humidity, We made an investigation into double layer effect of teflon electrets. Teflon AF film was spincoated on FEP film and then the charge storage property of AF/FEP dual film was investigated to be compared with FEP film. It was found that the AF/FEP dual film has higher surface potential than FEP film on the repeated charging and annealing process. It seems that AF/FEP dual film has higher thermal stability than FEP film through TSC measurement. If the investigations of the double layer effect of Teflon film carried out more closely with it's molecular structures and surface conditions, it may be effectively improved the stability of charge storage.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.156-162
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• 1995

For a stimulating neural electrode, the charge density should be as large as possible to provide adequate stimulation of the nervous system while allowing for miniaturization of the electrode. Since iridium oxide is able to produce high charge densities while preventing undesirable reactions due to charge storage, it has become a promising material for neural prostheses. Successful production of stable Ir and Ir oxide films on various substrates now limits the use of this material. Ir was deposited on two differently prepared surface of (mirror finish, passivation) surgical Ti-6AI-4V with several methods. Ion beam mixing of sputter deposited Ir films on passivated Ti-6AI-4V produced stable and good adherent Ir films. It was found that the increase in charge density of pure Ir on continuous cyclingis due to the accumulation of the oxide phase ( associated with a large surface area) in which the valence state of iridium changes and the double-layer capacitance increases. This study also showed that the double layer capacitance is equally or even more responsible for the high charge density of anodically formed Ir oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• Journal of the Mineralogical Society of Korea
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• v.3 no.2
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• pp.89-97
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• 1990

To examine how London energy controls the c-dimensions of phyllosilicates, London energy, as well as Coulomb and Pauli repulstion energy was calculated as a function of d(001) for 1M and d(002) for 2M 1 phyllosilicates. London and Pauli repulstion energy calcualtion use a direct interaction calculation method and Coulomb energy calculation adopts Fourier synthesis method. The energy calculations show that Coulmb and Pauli repulsion energy dominantly control the c-dimensions of phyllosilicates having the interlayer cationss, i.e., the layer charges. On the other hand, if phyllosilicates have no interlayer cations, London energy is solely responsible for holding the layers and maintain the c-dimensions. The significance of London energy in determining the c-dimensions of phyllosislicates de-creases as the layer charge increases. When the layer charge is lower than one equivalent on the basis of Oη(OH)2 formula, London energy plays an important role in determing the c-dimensions. however, if the layer charge is higher than one equivalent, London energy becomes insignifi-cant in determining the c-dimension.

• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.3-8
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• 1985

The layer charge densities and interlayer C. E. C(cation exchange capacity) of ten mica-type aluminosilicates from Yong-il Pohang-prefacture were determined by n-alkylammonium method which is based on the mo-nolayer-doubelelayer structural transition of ni-alkylammonium ion in interlayer space of the layered silcates. The upper and lower limits of layer charge and interlyer C, E, C estimated were about 0.25~0.36 eq/(Si, $Al)_4$ O10 and 69~99meq/100g, respectively.

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.210-214
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• 2014

We investigated emission characteristics of tandem organic light emitting devices (OLEDs) with p-type materials as charge generation layer. The tandem OLEDs were fabricated by using $MoO_x$, $WO_x$, C60 and HATCN as p-type material or not using p-type material for charge generation. When HATCN was used as p-type material, it showed high current density at low applied voltage, but increase of efficiency was small because of charge unbalance in emitting layer. In case of tandem OLED not using p-type material, applied voltage increased remarkably because of difficulty of hole injection. In case of $MoO_x$, $WO_x$ or C60 as p-type material, current emission efficiency increased greatly. In particular, current emission efficiency of tandem OLED using $MoO_x$ as p-type material increased up to 3 times than current emission efficiency of single OLED. The Commission Internationale de l'Eclairage (CIE) 1931 color coordinates were changed by overlapping of 504 nm emission wavelength. As a result, emission efficiency of tandem OLED improved compared with single OLED, but driving voltage also increased by increase of organic layer thickness.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.8 no.3
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• pp.173-179
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• 2010

In a HLW repository, the buffer is exposed to an elevated temperature due to a radioactive decay and geochemical conditions for a long time and such a hydrothermal condition may cause a significant loss of its barrier function. This study carried out hydrothermal tests with a domestic smectite clay to investigate the changes in the expandibility, layer charge, and cation exchange capacity of the smectite. When the temperature and potassium concentration in solution was increased for the hydrothermal treatments, the expandibility decreased, the layer charge negatively increased, and the CEC also decreased.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.59.2-59.2
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• 2012

Polymer solar cells utilize bulk heterojunction (BHJ) type photo-active layer in which the electron donating polymer and electron accepting $C_{60}$ derivatives are blended. We found there is significant charge recombination at the interface between the BHJ active layer and electrode. The charge recombination at the interface was effectively reduced by inserting wide band gap inorganic interfacial layer, which resulted in efficiency and stability enhancement of BHJ polymer solar cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.254.2-254.2
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• 2014

The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.92-100
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• 1985

New N+N/P HLE solar cells with N+ surface charge accumulated layer in the emitter region are fabricated on the N/P Si epiwafer by incorporating high fixed positive charge density (Qss) at the Si-AR layer interface. Solar cells are classified into two categories, i.e, OCI and NCI Cell depending on AR layer, SiOl and Si3 N4/sioxynitride layer respectively. The distribution of Qss in the Si-AR layer interface is examined by C-V plot. It shows that the surface charge accumulated layer is formed more effectively in the NCI cell (Qss=1.79-1.84$\times$1012cm-2) than in the OCI cell (Qss=3.03~4.40$\times$1011 cm-2). The efficiency characteristics are evaluated under the JCR halogen lamp of 100 mw/cm2. The average (maximum) conversion efficiency for active area is 15.18 (15.46)% in the OCI cell and 16.31 (17.07)% in the NCI cell.