• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.380-384
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• 2012

This paper deals with the recent developments of high thermal conductivity silicon nitride ceramics. First, the factors that reduce the thermal conductivity of silicon nitride are clarified and the potential approaches to realize high thermal conductivity are described. Then, the recent achievements on the silicon nitride fabricated through the reaction bonding and post sintering technique are presented. Because of a smaller amount of impurity oxygen, the obtained thermal conductivity is substantially higher, compared to that of the conventional gas-pressure sintered silicon nitride, while the microstructures and bending strengths are similar to each other between these two samples. Moreover, further improvement of the thermal conductivity is possible by increasing ${\beta}/{\alpha}$ phase ratio of the nitrided sample, resulting in a very high thermal conductivity of 177 W/($m{\cdot}K$) as well as a high fracture toughness of 11.2 $MPa{\cdot}m^{1/2}$.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.2
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• pp.322-329
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• 2009

Machinability of LAM(Laser Assisted Machining) has been studied for ceramics such as $Al_2O_3$, $Si_3_N4$ and $ZrO_2$ by $CO_2$ laser. It was possible to remove ceramics by PCBN tool because material became softening and deterioration by local laser beam irradiation. The advantage of LAM is the ability to produce larger material removal rates and tool life. But, for cutting of $Al_2O_3$ and $ZrO_2$, stage of laser power control was needed owing to thermal shock with high temperature of workpiece by laser power. And when $Si_3N_4$ was machined by LAM, $N_2$ gas spouted from surface of one cause of high temperature. Characteristics of LAM were analyzed using pyrometer, dynamometer, SEM and EDS to measure temperature of workpiece surface, cutting force, variation of machining surface and structure of lattice respectively. As the result of this study, it was found that machinability of LAM for ceramics in $CO_2$ laser and mechanism of LAM was different according to the kind of ceramics because of properties of materials.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.3
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• pp.125-129
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• 2009

The preparation and characterization of niobium carbide crystallites were investigated in this study, and in particular, the effect of preparation conditions were studied on the synthesis of niobium carbides crystallites. For this purpose, various characterization techniques including x-ray diffraction, BET surface area, and oxygen uptake measurements were employed to characterize the synthesized niobium carbide crystallites. The niobium carbide crystallites were prepared using niobium oxide and methane gas or methane-hydrogen mixture. Using x-ray diffraction a lattice parameter of $4.45{\AA}$ and a crystallite size ranging from $52{\AA}$ to $580{\AA}$ was found. BET surface areas ranged from $3.2\;m^2/g$ to $16.6\;m^2/g$ and oxygen uptake values varied from $0.5{\mu}mol/g$ to $6.1{\mu}mol/g$. It was observed that niobium carbide crystallites were active for ammonia decomposition reaction. While the BET surface area increased with increasing the oxygen uptake, the conversion of ammonia decomposition reaction decreased. These results indicated that the ammonia decomposition over these materials was considered to be structure-sensitive.

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.997-1000
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• 2001

Conducting perovskite oxide, $(Ba,Sr)RuO_3(BSR)$, which has many advantages for $(Ba,Sr)TiO_3(BST)$ due to their similarity in crystal structure, lattice constant and chemical composition, was prepared on n-type Si (100) by liquid delivery metalorganic chemical vapor deposition(LDMOCVD). The deposition characteristics of BSR were controlled by gas-phase mass-transfer in the experiment. The BSR films deposited at 50$0^{\circ}C$ and oxygen flow rate of 100 sccm(standard cc/min) showed an average roughness of 22 $\AA$and resistivity of 810 $\mu$$\Omega$-cm. The roughness of BSR films with oxygen flow rate showed a close relationship with the resistivity of films. BSR (110) peak shifted toward lower Bragg angle with increase of x in the$(Ba_x,Sr_{1-x})TiO_3$. The resistivity of BSR films increased from 810 to 924 $\mu$$\Omega$-cm with increase of Ba content(x).

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.765-768
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• 2009

In this work, we prepared the activated multi-walled carbon nanotubes (Acti-MWNTs) with well developed physical surface structures, high specific surface area, and higher adsorption capacity by a physical activation process, in order to enhance the hydrogen storage capacity. The Acti-MWNTs' changes in the crystalline phase and in their lattice distortions were characterized by X-ray diffraction (XRD). The textural properties of the Acti-MWNTs were investigated by a nitrogen adsorption isotherms by Brunauer-Emmett-Teller (BET) equation and Harvath-Kawazoe (H-K) calculation, respectively. The hydrogen storage capacity of the Acti-MWNTs was investigated by BEL-HP at 298 K/100 bar. The hydrogen storage capacity of the Acti-MWNTs was improved with the physical activation, resulted from the formation of new hydrogen-favorable sites on the Acti-MWNT surfaces. In conclusion, the physical activation was one of the effective method to enhance the hydrogen storage capacity of the MWNTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.618-618
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• 2013

Graphene is only one atom thick planar sheet of sp2-bonded carbon atoms arranged in a honeycomb crystal lattice, which has flexible and transparent characteristics with extremely high mobility. These noteworthy properties of graphene have given various applicable opportunities as electrode and/or channel for various flexible devices via suitable physical and chemical modifications. In this work, for the development of all-graphene devices, we performed to synthesize alternately patterned structure of mono- and multi-layer graphene by using the patterned Ni film on Cu foil, having much different carbon solid solubilities. Depending on the process temperature, Ni film thickness, introducing occasion of methane and gas ratio of CH4/H2, the thickness and width of the multi-layer graphene were considerably changed, while the formation of monolayer graphene on just Cu foil was not seriously influenced. Based on the alternately patterned structure of mono- and multi-layer graphene as a channel and electrode, respectively, the flexible TFT (thin film transistor) on SiO2/Si substrate was fabricated by simple transfer and O2 plasma etching process, and the I-V characteristics were measured. As comparing the change of resistance for bending radius and the stability for a various number of repeated bending, we could confirm that multi-layer graphene electrode is better than Au/Ti electrode for flexible applications.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.315-323
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• 1991

The preparation of zirconium carbide powders by the halogenide process of ZrCl4-C-Mg system (1:1:2, molar ratio) was studied between 300。 and 120$0^{\circ}C$ under Ar gas flow (200 mι/min). The formation mechanism and kinetics of zirconium carbide and characteristics of the synthesized powder were examined by TG-DTA, XRD, SEM and PSA. 1) The formation mechanism of zirconium carbide were as follows, above 30$0^{\circ}C$ ZrCl4(S)+Mg(s)longrightarrowZrCl2(s)+MgCl2(s) above 40$0^{\circ}C$ ZrCl2(S)+Mg(s)longrightarrowZr(s)+MgCl2(s) above 50$0^{\circ}C$ Zr(s)+C(s)longrightarrowZrC(s) 2) The apparent activation energy of the reduction-carbonization at temperature of 800$^{\circ}$to 100$0^{\circ}C$ was 11.9 kcal/mol. 3) The lattice parameter and the crystallite size of ZrC which was produced from the mixture powder of ZrCl4, C and Mg (1:1:2, molar ratio) at 100$0^{\circ}C$ for 1 h were 4.700A and 180A, respectively. 4) The powders obtained from the mixture powder of ZrCl4, C and Mg(1:1:2, molar ratio) at 100$0^{\circ}C$ for 1 h were agglomerate with the average size of about 13${\mu}{\textrm}{m}$ in SEM micrograph.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.620-623
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• 2003

The material processing by using ultrashort pulse laser, in recently, is actively applying into the micro machining and nano-machining technology since ultrashort pulse has so faster than the time which the electrons energy absorbing photon energy is transmitted to surrounding lattice-phonon that it has many advantages in point of machining. The micro machining of metallic thin film on the plain glass is widely used in the fields such as mask repairing for semiconductor, fabrication of photonic crystal, MEMS devices and data storage devices. Therefore, it is important to secure the machining technology of the sub-micron size. In this research, we set up the machining system by using ultrashort pulse laser and conduct on the Cr 200nm thin film ablation experiments of spot and line with the variables such as energy, pulse number, speed, and so on. And we observed the characteristics of surrounding heat-affected zone and by-products appeared in critical energy density and higher energy density through SEM, and also examined the machining features between in He gas atmosphere which make pulse change minimized by nonlinear effect and in the air. Finally, the pit size of 0.8${\mu}{\textrm}{m}$ diameter and the line width of 1${\mu}{\textrm}{m}$ could be obtained.

• Journal of KSNVE
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• v.10 no.4
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• pp.610-614
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• 2000

Cellular Automata(CA)s are used as a simple mathematical model to investigate self-organization in statistical mechanics, which are originally introduced by von Neumann and S. Ulam at the end of the 1940s. CAs provide a framework for a large class of discrete models with homogeneous interactions, which are characterized by the following fundamental properties: 1) CAs are dynamical systems in which space and time are discrete. 2) The systems consist of a regular grid of cells. 3) Each cell is characterized by a state taken from a finite set of states and updated synchronously in discrete time steps according to a local, identical interaction rule. 4) The state of a cell is determined by the previous states of a surrounding neighborhood of cells. A cellular automaton has been attracted wide interest in modeling physical phenomena, which are described generally, partial differential equations such as diffusion and wave propagation. This paper describes one and two-dimensional analysis of wave propagation phenomena modeled by CA, where the local interaction rules were derived referring to the Lattice Gas Model reported by Chen et al., and also including finite difference scheme. Modeling processes by using CA are discussed and the simulation results of wave propagation with one wave source are compared with that by finite difference method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.1-4
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• 2004

Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition(CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_2$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_0$ and $c_0$ were $4.302{\AA}$ and 7.014 ${\AA}$, respectively. Its grain size was about 0.3 ${\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 200K, and by polar optical scattering at temperature range of 200K and 293K. We measured also spectral response, sensitivity$(\gamma)$, maximum allowable power dissipation and response time on these samples.