Characteristics of (Ba,Sr)RuO$_3$Bottom Electrodes by Liquid Delivery Metalorganic Chemical Vapor Deposition

액체 운반 유기 금속 화학 기상 증착법에 의한 $(Ba,Sr)RuO_3$ 하부전극의 특성

  • Choe, Eun-Seok (Dept. of Materials Engineering, Chungnam National University) ;
  • Yun, Sun-Gil (Dept. of Materials Engineering, Chungnam National University)
  • Published : 2001.11.01

Abstract

Conducting perovskite oxide, $(Ba,Sr)RuO_3(BSR)$, which has many advantages for $(Ba,Sr)TiO_3(BST)$ due to their similarity in crystal structure, lattice constant and chemical composition, was prepared on n-type Si (100) by liquid delivery metalorganic chemical vapor deposition(LDMOCVD). The deposition characteristics of BSR were controlled by gas-phase mass-transfer in the experiment. The BSR films deposited at 50$0^{\circ}C$ and oxygen flow rate of 100 sccm(standard cc/min) showed an average roughness of 22 $\AA$and resistivity of 810 $\mu$$\Omega$-cm. The roughness of BSR films with oxygen flow rate showed a close relationship with the resistivity of films. BSR (110) peak shifted toward lower Bragg angle with increase of x in the$(Ba_x,Sr_{1-x})TiO_3$. The resistivity of BSR films increased from 810 to 924 $\mu$$\Omega$-cm with increase of Ba content(x).

Keywords

References

  1. S.G. Yoon, J.C. Lee and A. Safari, J. Appl. Phys. 76 (5), 2999 (1994) https://doi.org/10.1063/1.357547
  2. S.G. Yoon and A. Safari, Thin Solid Films, 24, 211 (1995) https://doi.org/10.1016/0040-6090(94)06235-D
  3. Q.X. Jia, X.D. Wu, S.R. Foltyn and P. Tiwari, Appl. Phys. Lett, 66 (17), 2197 (1995) https://doi.org/10.1063/1.113945
  4. N. Okuda, K. Saito and H. Funakubo, Jpn. J. Appl. Phys. 39 (2A), 572 (2000) https://doi.org/10.1143/JJAP.39.572
  5. C.M. Chu and P. Lin, Appl. Phys. Lett. 72 (10), 1241 (1998) https://doi.org/10.1063/1.121026
  6. N. Higashi, N. Okuda and H. Funakubo, Jpn. J. Appl. Phys. 39 (5A), 2780 (2000) https://doi.org/10.1143/JJAP.39.2780
  7. H.N. Al-Shareef, B.A. Tuttle, W.L. Warren, D. Dimos, M.V. Raymond and M.A. Rodriguez, Appl. Phys. Lett. 68, 272 (1996) https://doi.org/10.1063/1.115660
  8. D.K. Choi, B.S. Kim, S.Y. Son, S.H. Oh and K.W. Park, J. Appl. Phys. 86 (4), 3347 (1999) https://doi.org/10.1063/1.371212
  9. K.Y. Park, J.H. Park, S.H. Oh, B.S. Kim, Y.C. Chung, D.K. Choi, C.Y. Yoo, Y.W. Park and S.I. Lee, J. Vac. Sci. Technil. B, 19 (1), 281 (2001) https://doi.org/10.1116/1.1333079
  10. D.W. Shaw, Crystal Growth, p. 11, Plenum Press, London, (1974)
  11. W.C. Shin and S.G. Yoon, J. Electrochem. Soc. 144, 1057 (1997) https://doi.org/10.1149/1.1837530