DOI QR코드

DOI QR Code

High Thermal Conductivity Silicon Nitride Ceramics

  • Hirao, Kiyoshi (National Institute of Advanced Industrial Science and Technology (AIST)) ;
  • Zhou, You (National Institute of Advanced Industrial Science and Technology (AIST)) ;
  • Hyuga, Hideki (National Institute of Advanced Industrial Science and Technology (AIST)) ;
  • Ohji, Tatsuki (National Institute of Advanced Industrial Science and Technology (AIST)) ;
  • Kusano, Dai (Japan Fine Ceramics Co. Ltd.)
  • Received : 2012.05.22
  • Accepted : 2012.06.21
  • Published : 2012.07.31

Abstract

This paper deals with the recent developments of high thermal conductivity silicon nitride ceramics. First, the factors that reduce the thermal conductivity of silicon nitride are clarified and the potential approaches to realize high thermal conductivity are described. Then, the recent achievements on the silicon nitride fabricated through the reaction bonding and post sintering technique are presented. Because of a smaller amount of impurity oxygen, the obtained thermal conductivity is substantially higher, compared to that of the conventional gas-pressure sintered silicon nitride, while the microstructures and bending strengths are similar to each other between these two samples. Moreover, further improvement of the thermal conductivity is possible by increasing ${\beta}/{\alpha}$ phase ratio of the nitrided sample, resulting in a very high thermal conductivity of 177 W/($m{\cdot}K$) as well as a high fracture toughness of 11.2 $MPa{\cdot}m^{1/2}$.

Keywords

References

  1. The Institute of Electrical Engineers of Japan, Power Semiconductor That Runs the World (in Japanese), Ohmsha, Ltd., Tokyo, 2009.
  2. C. R. Eddy Jr. and D. K. Gaskill, "Silicon Carbide as a Platform for Power Electronics," Science, 324 [5933] 1398-400 (2009). https://doi.org/10.1126/science.1168704
  3. M. Yamagiwa, "Packaging Technologies of Power Modules for Hybrid Electric Vehicles and Electric Vehicles (in Japanese)," Bull. Ceram. Soc. Japan, 45 [6] 432-37 (2010).
  4. K. Hirao, "Development of Ceramic Substrates with High Thermal Conductivity (in Japanese)," Bull. Ceram. Soc. Jpn, 45 [6] 444-47 (2010).
  5. M. Kitayama, K. Hirao, M. Toriyama, and S. Kanzaki, "Thermal Conductivity of Beta-Si3N4: I, Effects of Various Microstructural Factors," J. Am. Ceram. Soc., 82 [11] 3105-12 (1999).
  6. A. Okada and K. Hirao, "Conduction Mechanism and Development of High Thermal Conductive Silicon Nitride (in Japanese)," Bull. Ceram. Soc. Jpn, 39 [3] 172-76 (2004).
  7. M. Kitayama, K. Hirao, A. Tsuge, K. Watari, M. Toriyama, and S. Kanzaki, "Thermal Conductivity of Beta-$Si_3N_4$: II, Effect of Lattice Oxygen," J. Am. Ceram. Soc., 83 [8] 1985-92 (2000).
  8. K. Hirao, K. Watari, H. Hayashi, and M. Kitayama, ''High Thermal Conductivity Silicon Nitride Ceramics,'' MRS Bull., 26 [6] 451-55 (2001). https://doi.org/10.1557/mrs2001.115
  9. K. Watari, "High Thermal Conductivity Non-oxide Ceramics," J. Ceram. Soc. Jpn, 109 [1] S7-S16 (2001). https://doi.org/10.2109/jcersj.109.S7
  10. H. Hayashi, K. Hirao, M. Toriyama, S. Kanzaki, and K. Itatani, ''$MgSiN_2$ Addition as a Means of Increasing the Thermal Conductivity of b Silicon Nitride,'' J. Am. Ceram. Soc., 84 [12] 3060-62 (2001). https://doi.org/10.1111/j.1151-2916.2001.tb01141.x
  11. A. J. Moulson, ''Reaction-Bonded Silicon Nitride: Its Formation and Properties,'' J. Mater. Sci., 14 1017-51 (1979). https://doi.org/10.1007/BF00561287
  12. X. W. Zhu, Y. Zhou, K. Hirao, and Z. Lences, ''Processing and Thermal Conductivity of Sintered Reaction-Bonded Silicon Nitride. I: Effect of Si Powder Characteristics,'' J. Am. Ceram. Soc., 89 [11] 3331-39 (2006). https://doi.org/10.1111/j.1551-2916.2006.01195.x
  13. Y. Zhou, X. W. Zhu, K. Hirao, and Z. Lences, "Sintered Reaction-Bonded Silicon Nitride with High Thermal Conductivity and High Strength," Int. J. Appl. Ceram. Technol., 5 [2] 119-26 (2008). https://doi.org/10.1111/j.1744-7402.2008.02187.x
  14. Y. Zhou and H. Hyuga, "Development of High Thermal Conductivity Silicon Nitride Ceramics (in Japanese)," Bull. Ceram. Soc. Jpn, 47 [1] 12-17 (2012).
  15. Y. Zhou H. Hyuga, D. Kusano, Y. Yoshizawa, and K. Hirao, "A Tough Silicon Nitride Ceramic with High Thermal Conductivity," Adv. Mater., 23 (39) 4563-67 (2011). https://doi.org/10.1002/adma.201102462
  16. D. Kusano, S. Adachi, G. Tanabe, H. Hyuga, Y. Zhou, and K. Hirao, "Effects of Impurity Oxygen Content in Raw Si Powder on Thermal and Mechanical Properties of Sintered Reaction-Bonded Silicon Nitrides," Int. J. Appl. Ceram. Technol., 9 [2] 229-38 (2012). https://doi.org/10.1111/j.1744-7402.2011.02618.x

Cited by

  1. Microstructure and Thermal Conductivity of Silicon Carbide with Yttria and Scandia vol.97, pp.3, 2013, https://doi.org/10.1111/jace.12737
  2. Heat conductivity, physico-mechanical properties and interrelations of them and structures of pressureless sintered composites produced of Si3N4-Al2O3-Y2O3(-ZrO2) nanodispersed system vol.36, pp.2, 2014, https://doi.org/10.3103/S106345761402004X
  3. Optimization of Binder Burnout for Reaction Bonded Si3N4 Substrate Fabrication by Tape Casting Method vol.52, pp.6, 2015, https://doi.org/10.4191/kcers.2015.52.6.435
  4. Effects of Debinding Atmosphere on Properties of Sintered Reaction-bonded Si3N4 Prepared by Tape Casting Method vol.53, pp.6, 2016, https://doi.org/10.4191/kcers.2016.53.6.622
  5. Morphology control of a silicon nitride thick film derived from polysilazane precursor using UV curing and IR heat treatment vol.116, pp.7, 2017, https://doi.org/10.1080/17436753.2017.1339490
  6. Optimization of the tape casting process for the development of high performance silicon nitride substrate vol.14, pp.4, 2017, https://doi.org/10.1111/ijac.12679
  7. and MgO as sintering additives vol.14, pp.6, 2017, https://doi.org/10.1111/ijac.12704
  8. Effect of amounts and types of silicon nitride on thermal conductivity of Si3N4/epoxy resin composite vol.123, pp.1441, 2012, https://doi.org/10.2109/jcersj2.123.908
  9. Development of high-thermal-conductivity silicon nitride ceramics vol.3, pp.3, 2012, https://doi.org/10.1016/j.jascer.2015.03.003
  10. Microstructural evolution of Si3N4 ceramics from starting powders with different α-to-β ratios vol.124, pp.8, 2012, https://doi.org/10.2109/jcersj2.16055
  11. Improvement in Thermal Conductivity of Silicon Nitride Ceramics via Microstructural Control and Their Application to Heat Dissipation Substrates vol.64, pp.8, 2012, https://doi.org/10.2497/jjspm.64.439
  12. Dielectric breakdown of silicon nitride substrates with various thicknesses vol.126, pp.9, 2012, https://doi.org/10.2109/jcersj2.18087
  13. Effect of powder characteristics on the thermal conductivity and mechanical properties of Si3N4 ceramics sintered by Spark plasma sintering vol.30, pp.8, 2019, https://doi.org/10.1007/s10854-019-01074-w
  14. High thermal conductivity silicon nitride ceramics prepared by pressureless sintering with ternary sintering additives vol.16, pp.4, 2012, https://doi.org/10.1111/ijac.13220
  15. 차세대 전력반도체 소자 및 패키지 접합 기술 vol.26, pp.3, 2012, https://doi.org/10.6117/kmeps.2019.26.3.015
  16. Preparation of α‐Si 3 N 4 by direct nitridation using polysilicon waste by diamond wire cutting vol.17, pp.1, 2012, https://doi.org/10.1111/ijac.13254
  17. Promising high-thermal-conductivity substrate material for high-power electronic device: silicon nitride ceramics vol.39, pp.5, 2012, https://doi.org/10.1007/s12598-020-01376-7
  18. Improving the thermal conductivity of epoxy composites using a combustion-synthesized aggregated β-Si 3 N 4 filler with randomly oriented grains vol.10, pp.None, 2020, https://doi.org/10.1038/s41598-020-71745-w
  19. Thickness dependence of dielectric breakdown strength for silicon nitride substrate vol.129, pp.12, 2012, https://doi.org/10.2109/jcersj2.21141