• 한국재료학회지
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• 제17권6호
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• pp.303-307
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• 2007

ZnO thin films were prepared by pulsed laser deposition on amorphous fused silica substrates at different ambient $O_2$ pressures varying from 0.5 to 500 mTorr, to observe the effect of ambient gas on their crystalline structure, morphology and optical properties. Results of X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence studies showed that crystallinity, surface features and optical properties of the films significantly depended on the oxygen background pressure during growth. A low oxygen pressure (0.5 mTorr) seems to be suitable for the growth of highly c-axis oriented and smoother films possessing a superior luminescent property. The films grown at the higher $O_2$ pressures (50-500 mTorr) were found to have many defects probably due to an excessive incorporation of oxygen into ZnO lattice. We speculate that the film crystallinity could be affected by the kinetics of atomic arrangement during deposition at the higher oxygen pressures.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2000년도 KIASC Conference 2000 / 2000년도 학술대회 논문집
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• pp.104-108
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• 2000

In this study, the fatigue test at room temperature and residual resistivity measurement test at 12K were carried out, respectively, using a 0 strand Cu-Ni/NbTi/Cu composite cable, in order to investigate how the annealing treatment effects on critical properties due to fatigue damage. Through a fatigue test of a 0 strand Cu-Ni/NbTi/Cu composite cables, a conventional S-N curve was obtained even though there existed a possibility of fretting among strands. From the resistivity measurement of a NbTi strand after fatigue tests, it was found that the RRR for annealed cables was 3 times more than that for as-received one, but with increase of the repeated number the RRR decreased which was resulted from the accumulation of damage such as lattice defects dislocation within the Cu stabilizer.

• 전기학회논문지
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• 제57권7호
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• pp.1295-1297
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• 2008

Large-sized flat-panel displays are widely used for PC monitors and TV displays. In this paper, frequency domain pre-filter algorithms are presented for detection of defects in large-sized Thin Film Transistor-Liquid Crystal Display(TFT-LCD) panel surfaces. Frequency analysis with 1-D, 2-D FFT methods for extract the periodic patterns of lattice structures in TFT-LCD is performed. To remove this patterns, frequency domain band-stop filters were used for eliminating specific frequency components. In order to acquire only defected images, 2-D inverse FFT methods to inverse transform of frequency domain images were used.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.497-501
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• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• 한국표면공학회지
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• 제12권3호
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• pp.167-173
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• 1979

The structure of anodic aluminium oxide films formed in 2% oxalic asid at constant temperature was studied by the oid of the transmission and replica electron microscopy. Far the initial stage of oxidations, it is observed that pores are initiated from lattice defects as subgrain boundaries, and then spread radially. Some pores merge each other and the others cease to grow until the current density reaches to the steady state. The pore diameter and the cell size are proportional to the anodizing voltages, and it is considered that the pore initiation and growth are largely controlled by the field - assisted oxide dissolution.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.53-53
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• 1998

Four valence of Chromium ion doped Yttrium Aluminum Garnet crystals were grown by Floating Zone and Czochralski methods. Changes of valence for Chromium (3+) ion to Chromium (4+) were achieved by substitution of Yttrium ion in dodecahedral site to Calcium and by substitution of Aluminum in octahedral site to Magnesium. Growth conditions for high quality of crystals were investigated. Grown crystals were cut and polished and then observed various types of defects. Characterizations by means of measurement of density and lattice parameter as a function of solidification fraction were performed. Results of Q-switching test using grown crystals were also reported.

• 한국세라믹학회지
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• 제37권8호
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• pp.799-804
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• 2000

Coulometric titration experiments have been done for copper doped cobaltous oxide (Co1-xCux)1-$\delta$ O with various dopant concentrations. We present the obtained experimental data and compare our results to those of previous thermogravimetric investigation. The experimental data are fitted by theoretical calculations based on various defect models. For this modeling, we considered different types fo major defects like copper in substitutional and interstitial lattice sites as well as copper vacancy. We also introduced the copper evaporation effect during titration experiment into our consideration.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.475-479
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• 1996

At present studies, we are going to suggest the new type of Perovskite derived catalysts which modify the defects of transition metals impregnated. Perovskite type catalyst is a typical mixed metal oxides, and there are "defect"s (from like that oxygen, cation, crystallic structure) were made by difference from composition, preparing method and so forth. And because this, its electro-magnetic character could be much changed. By using this phenomena, it could utilize the modification of adsorption/desorption characters as well as the catalytic activities in NOx reduction. Because perovskite type catalyst can exchange the metal of the each lattice site freely and it is possible to represent the peculiar.

• 한국재료학회지
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• 제2권5호
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• pp.383-386
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• 1992

(100) 실리콘 기판에 대해 깊온 비등방성 식각을 행한 경우 식각면의 가장자리에 존재하는 욜균일성은 식각 계면의 격자결함과 기계적 응력에 의한 것임을 판찰할 수 있었다.

• 열처리공학회지
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• 제7권2호
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• pp.88-95
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• 1994

In order to compare mechanical properties of ausformed martensite with those of marformed martemsite in Fe-30%Ni-0.1%C alloy and to investigate their strengthening mechanisms, ausformed martensite and marformed martensite were prepared by ausforming treatment and marforming treatment respectively. The microstructures were observed and the quantities of retained austenite, hardness, yield strength, ultimate tensile strength and elongation were examined. The strength of ausformed martensite was mainly increased because of the lattice defects inherited from austenite. The ductility of ausformed martensite was constant at the rate of 7-8% by ductile matrix formation of the retained austenite in spite of the increase in strength. The strength of marformed martensite was increased by the increment in dislocation density, the crossing of transformation twin with deformation twin and the mutual crossing of deformation twin. The ductility of mar formed martensite was slightly lower than that of ausformed martensite, but the strength of mar formed martensite was prominently higher.