• 한국지반공학회논문집
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• 제24권10호
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• pp.5-15
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• 2008

본 연구의 목적은 연약지반개량을 위한 수평배수층 재료로 순환골재의 적용가능성을 검증함에 있다. 최근 모래의 수급불균형이 초래되고 있으며, 이는 단순히 가격 상승의 문제에서 그치는 것이 아닌 전체 공정의 지연을 초래하게되어 문제의 심각성이 크다. 이러한 상황에서 순환골재는 그 수요를 충족시킬 수 있는 적절한 대체재료로 인식되고 있으며, 이를 검증하기 위해 우선 이미 제정된 각종기준과 규정을 찾아 비교 정리하였고, 다음으로 기존의 수평배수층 재료인 모래와의 공학적 특성에 대한 비교 및 검토를 시행하였다. 결과로써 순환골재는 모래에 비해 큰 투수계수 및 단위중량으로 인해 수평배수층으로써의 대부분 기준을 만족하였으며, 클로깅에 대한 문제는 수평배수층 상부에 필터층을 추가 설치하는 방안으로 해결할 수 있어, 현장적용이 가능한 것으로 판단되었다. 또한 모래에 비해 순환골재의 구입단가가 상대적으로 낮아 공사비 절감이 가능하여, 수평배수층 재료로 순환골재는 매우 경쟁력있는 대체재료라 할 수 있다.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2006년도 추계학술대회 논문집
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• pp.1380-1384
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• 2006

Sediments deposited on lateral drain pipes in a tunnel make lateral porous pipes clogged. Since the safety of the tunnel can be affected by this phenomenon, it requires a regular maintenance of the lateral drain pipes. In this study, a series of centrifugal tests were conducted in order to find out the method which can reduce the clogging effect considerably. Four different types of tunnel drain configurations were selected in the experiments. By analysis of sediments for each configuration, the optimum drain configuration that can minimize sedimentation of cement constituents was investigated. As a results, the existing drain configuration which uses filter concrete appear to produce much sediments. In contrast, the new drain configuration appears to be able to reduce sedimentation ratio up to almost 50% comparing with the existing one. From these observations, it may be concluded that the new drain configuration, in which the lateral porous pipes of a tunnel are surrounded by gravel layer and non-woven geotextile, has high efficiency in maintenance.

• 한국지반공학회지:지반
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• 제1권2호
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• pp.27-40
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• 1985

본고는 기약지반변형해석에 이용될 범용 program을 개발하고 이를 이용하여 성토부끝에 sheet pile을 타설하거나 혹은 성토부아래의 연약정토지반을 개취하였을 때의 변형억제효과를 연구한 것이다. 본고에 적용된 압밀리론으로서 Biot의 압밀방정식과 구성방정식으로서 탄소성리론에 근거한 modified Cam-clay 이론을 적용하였고 유한요소해석으로서는 Christian-Boehmer계를 도입하여 program화한 것이다. 그 주요한 결론은 다음과 같다. 1. 속변지반의 침하효과에 관해서는 sheet pile이나 심우혼합처새깊이를 자지층까지 관입하여 시공하고 그 자신의 침하가 없을 경우에만 유효하다. 2. 흔히 사용되는 sheet pile대책공법은 통상의 steel sheet pile의 각성으로서는 성토직후의 봉기, 측방변위의 억제효과는 기대할 수 없다. 3. Sheet pile에 대한 예상론인 사용방법은 성토하부에 세밀을 촉진하기 위해 vertical drain을 설치하고 점증재하 방법만이 확실한 효과가 있다. 4. 체층혼합처리공법은 예상한 바와 같이 그 자종가 강성이 클수록 침하억제핵과가 있다. 특히 grouting을 통한 지반강화가 곧장 주변지반의 변형억제효과가 있다고 단정하는 것은 그 강성 까 관련하여 신중히 고려하여 결정해야 한다.

• 한국지반공학회지:지반
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• 제3권1호
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• pp.7-24
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• 1987

울산만 북서측 임해지역체 발달된 연약해성점토를 개양하기 위하려 선행대중과 Wick Drain공법의 병용공법이 적용되었다. 상기 공법의 적용에 따른 연약해성점토의 거동 및 강침특성을 요명하여, 안전하고 신속하게 시공을 실시하기 위하여 현장계측에 의한 공학적인 시공관리를 실시하였다. 본 고는 연약해성점토를 개량하기 위하여 적용한 선행하중과 Wick Drain공법의 설계, 시공 및 안전관리방법을 수록하고 있다.

• 전자공학회논문지A
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• 제29A권2호
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• pp.77-79
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• 1992

We propose a self-aligned and double recessed technique for GaAs power MESFETs application. The gate length and the wide recess width are defined by a selective removal of the SiN layer using reactive ion etching(RIE) while the depth of the channel is defined by chemical etching of GaAs layers. The threshold voltages and the saturation drain voltage could be sucessfully controlled using this technique. The lateral-etched distance increases with the dry etching time and the source-drain breakdown voltage of MESFET increases up to about 30V at a pinch-off condition. The electrical characteristics of a MESFET with a gate length of 2 x10S0-6Tm and a source-gate spacing of 33 x10S0-6Tm show maximum transconductance of 120 mS/mm and saturation drain current density of 170-190mA/mm at a gate voltage of 0.8V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.305-308
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• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권2호
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• pp.111-120
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• 2011

A two-dimensional analytical model for deriving the threshold voltage of a short channel fully depleted (FD) cylindrical/surrounding gate MOSFET (CGT/SGT) is suggested. By taking into account the lateral variation of the surface potential, introducing the natural length expression, and using the Bessel functions of the first and the second kinds of order zero, we can derive potentials in the gate oxide layer and the silicon core fully two-dimensionally. Making use of these potentials, the minimum surface potential can be obtained to derive the threshold voltage as a closed-form expression in terms of various device parameters and applied voltages. Obtained results can be used to explain the drain-induced threshold voltage roll-off of a CGT/SGT in a unified manner.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.148-152
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• 2004

The direct lateral profile and retention characteristics of locally trapped-charges in the nitride layer of the two-bit polysilicon-oxide-nitride-oxide-silicon (SONOS) memory are investigated by using the charge pumping method. After charges injection at the drain junction region, the lateral diffusion of trapped charges as a function of retention time is directly shown by the results of the local threshold voltage and the trapped-charges quantities.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1515-1517
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• 2001

In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces have been interested. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-6}$ Torr and at a deposition rate of 0.3$\AA$/sec. Aluminium and gold were used for gate and source/drain electrodes. before pentacene is deposited on the insulator, the gate dielectric surfaces of two samples were rubbed with lateral and perpendicular to direction of the channel length respectively.