• Journal of the Korean Geotechnical Society
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• v.24 no.10
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• pp.5-15
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• 2008

The purpose of this study is to examine the validity of recycled aggregates (RAs) as a substitute for Sand-Mat material for soft ground improvement in the housing site development. To evaluate the possibility of RAs as a substitute for sand mat material, first of all, the criteria and regulations related with the quality of lateral drain layer were collected and checked. Secondly, both of the properties of RAs were compared with the properties of natural sand for the lateral drain layer. The material properties related to coefficient of permeability, pressure at-rest state and so on satisfied most standards. On the basis of the test results, RAs were used to the construction site as lateral drain layer. Accordingly, if the quality of RAs can be managed well, the application of these RAs as lateral drain layer to replace natural sand was highly effective. Also, based on cost analysis of two materials, RAs are proved to be very competitive.

• Proceedings of the KSR Conference
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• 2006.11b
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• pp.1380-1384
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• 2006

Sediments deposited on lateral drain pipes in a tunnel make lateral porous pipes clogged. Since the safety of the tunnel can be affected by this phenomenon, it requires a regular maintenance of the lateral drain pipes. In this study, a series of centrifugal tests were conducted in order to find out the method which can reduce the clogging effect considerably. Four different types of tunnel drain configurations were selected in the experiments. By analysis of sediments for each configuration, the optimum drain configuration that can minimize sedimentation of cement constituents was investigated. As a results, the existing drain configuration which uses filter concrete appear to produce much sediments. In contrast, the new drain configuration appears to be able to reduce sedimentation ratio up to almost 50% comparing with the existing one. From these observations, it may be concluded that the new drain configuration, in which the lateral porous pipes of a tunnel are surrounded by gravel layer and non-woven geotextile, has high efficiency in maintenance.

• Geotechnical Engineering
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• v.1 no.2
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• pp.27-40
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• 1985

This study aims at the development of computer Program for the deformation analysis of soft clay layers, and using this computer program, study the constraint effect of deformation- heaving, lateral displacement-of the soft clay layers reinforced with sheet pile at the tip of banking or improvement of soft clay layer up to hard strata, under intact state (natural) and the state of vertical drain respectively. For this study, Biot's consolidation theories and modified Cam-clay theory for constitutive equation for FEMI were selected and coupled governing equation, and christian-Boehmer's technique was applied to solve the coupled relationship. The following results are obtained. 1. Sheet pile or improvement of soft clay layer to the hard strata work well against the settlement of neighboring ground. B. In view of restriction of heaving or lateral displacement, sheet pile is not supposed to be of use. 3. Sheet pile is of effect only when vertical drain is constructed for acceleration of consolidation and load increases gradually. B. The larger the rigidity of improvement of layer to hard strata is, the less settlement occurs.

• Geotechnical Engineering
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• v.3 no.1
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• pp.7-24
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• 1987

Preloading surcharge method along with vertical drains was adopted to improve the performance of a very soft marine clay deposit. The onshore deposit, located in the Ulsan Bay area, consists of a 2 to 10m thick, very soft, highly compressible marine clay layer developed just below. the sea water level. The initial undrained shear strength of the clay layer was about 0.6 ton/m2. But, the deposit was designed after treatment to support some auxiliary facilities for a new ilo refinery plant, requiring bearing capacities of 3.6 to 5.4 ton/m2 and maximum allowablee settlement of less than 7.5cm. A total of 35, 000 wick drains Ivas installed to expedite drainage during preloading, and surcharge loads of up to 5m above the original ground level were applied in a step-by-step loading sequence to prevent ground failure by excess surcharge loads. An extensive program of field instrumentation was implemented to monitor the behavior of the clay deposit. Measurers!ends included settlements, excess pore pressure and its dissipation, ground farmer level fluctuation, and lateral movement of the so(t clay layer under the preloads. This paper describes the design concepts, construction methods and control procedures used for improvement of the clay layer. It also presents the ground behavior measured during construction, rind comparisons with theoretical predictions.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.77-79
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• 1992

We propose a self-aligned and double recessed technique for GaAs power MESFETs application. The gate length and the wide recess width are defined by a selective removal of the SiN layer using reactive ion etching(RIE) while the depth of the channel is defined by chemical etching of GaAs layers. The threshold voltages and the saturation drain voltage could be sucessfully controlled using this technique. The lateral-etched distance increases with the dry etching time and the source-drain breakdown voltage of MESFET increases up to about 30V at a pinch-off condition. The electrical characteristics of a MESFET with a gate length of 2 x10S0-6Tm and a source-gate spacing of 33 x10S0-6Tm show maximum transconductance of 120 mS/mm and saturation drain current density of 170-190mA/mm at a gate voltage of 0.8V.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.305-308
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• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.111-120
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• 2011

A two-dimensional analytical model for deriving the threshold voltage of a short channel fully depleted (FD) cylindrical/surrounding gate MOSFET (CGT/SGT) is suggested. By taking into account the lateral variation of the surface potential, introducing the natural length expression, and using the Bessel functions of the first and the second kinds of order zero, we can derive potentials in the gate oxide layer and the silicon core fully two-dimensionally. Making use of these potentials, the minimum surface potential can be obtained to derive the threshold voltage as a closed-form expression in terms of various device parameters and applied voltages. Obtained results can be used to explain the drain-induced threshold voltage roll-off of a CGT/SGT in a unified manner.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.148-152
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• 2004

The direct lateral profile and retention characteristics of locally trapped-charges in the nitride layer of the two-bit polysilicon-oxide-nitride-oxide-silicon (SONOS) memory are investigated by using the charge pumping method. After charges injection at the drain junction region, the lateral diffusion of trapped charges as a function of retention time is directly shown by the results of the local threshold voltage and the trapped-charges quantities.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1515-1517
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• 2001

In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces have been interested. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-6}$ Torr and at a deposition rate of 0.3$\AA$/sec. Aluminium and gold were used for gate and source/drain electrodes. before pentacene is deposited on the insulator, the gate dielectric surfaces of two samples were rubbed with lateral and perpendicular to direction of the channel length respectively.