• JSTS:Journal of Semiconductor Technology and Science
• /
• 제2권2호
• /
• pp.93-101
• /
• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• 대한의용생체공학회:의공학회지
• /
• 제21권4호
• /
• pp.403-409
• /
• 2000

본 연구는 3차원 유한요소 몸통 모델을 이용한 제세동 시뮬레이션 연구로서, 제세동 자극인가시 임상에서 사용되는 세가지 전극의 위치와 크기가 심장에서의 전류밀도 분포특성에서 미치는 영향과 시뮬레이션에 사용되는 조직의 비저항 값이 시뮬레이션 결과에 미치는 영향에 대하여 시뮬레이션 하였다. 몸통 모델은 타원형 실린더를 사용하여 흉곽을 모델링하였고, 나머지 부분은 Visible Human의 2차원 영상들을 통하여 3차원 모델링을 하였다. 그리고, ANSYS 5.4를 통하여 유한요소의 전류밀도 해를 구하였다. AP(anterior-posterior) 전극 위치의 경우, 몸통 표면에서 인가한 전류가 가장 효과적으로 심장으로 흘러들어 갔으며, LL(Lateral-lateral) 전극 AP(anterior-posterior) 전극 위치의 경우, 몸통 표면에서 인가한 전류가 가장 효과적으로 심장으로 흘러들어갔으며, LL(lateral-lateral) 전극위치는 가장 균일한 전류밀도 분포특성을 나타내었다. 그러나, 전극의 크기변화는 전류밀도 분포특성에 거의 영향을 주지 않았다. 조직의 비저항 값의 변화에 대한 전류밀도 분포 실험결과는 심근의 비저항 값의 변화가 최소·평균·최대 전류밀도 해에 가장 큰 영향을 주었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권2호
• /
• pp.73-77
• /
• 2000

A dual-gate SOI SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) which eliminates the snapback effectively is proposed and verified by numerical simulation. The elimination of the snapback in I-V characteristics is obtained by initiating the hole injection at low anode voltage by employing a dual gate and a floating electrode in the proposed device. For the proposed device, the snapback phenomenon is completely eliminate, while snapback of conventional SA-LIGBT occurs at anode voltage of 11 V. Also, the drive signals of two gates have same polarity by employing the floating electrode, thereby requiring no additional power supply.

• 한국재료학회지
• /
• 제22권1호
• /
• pp.1-7
• /
• 2012

Thin film electrode consisting purely of porous anodic tin oxide with well-defined nano-channeled structure was fabricated for the first time and its electrochemical properties were investigated for application to an anode in a rechargeable lithium battery. To prepare the thin film electrode, first, a bi-layer of porous anodic tin oxides with well-defined nano-channels and discrete nano-channels with lots of lateral micro-cracks was prepared by pulsed and continuous anodization processes, respectively. Subsequent to the Cu coating on the layer, well-defined nano-channeled tin oxide was mechanically separated from the specimen, leading to an electrode comprised of porous tin oxide and a Cu current collector. The porous tin oxide nearly maintained its initial nano-structured character in spite of there being a series of fabrication steps. The resulting tin oxide film electrode reacted reversibly with lithium as an anode in a rechargeable lithium battery. Moreover, the tin oxide showed far more enhanced cycling stability than that of powders obtained from anodic tin oxides, strongly indicating that this thin film electrode is mechanically more stable against cycling-induced internal stress. In spite of the enhanced cycling stability, however, the reduction in the initial irreversible capacity and additional improvement of cycling stability are still needed to allow for practical use.

• Clinical Psychopharmacology and Neuroscience
• /
• 제16권4호
• /
• pp.494-496
• /
• 2018

No previous reports have described a case in which deep brain stimulation elicited an acute mood swing from a depressive to manic state simply by switching one side of the bilateral deep brain stimulation electrode on and off. The patient was a 68-year-old woman with a 10-year history of Parkinson's disease. She underwent bilateral subthalamic deep brain stimulation surgery. After undergoing surgery, the patient exhibited hyperthymia. She was scheduled for admission. On the first day of admission, it was clear that resting tremors in the right limbs had relapsed and her hyperthymia had reverted to depression. It was discovered that the left-side electrode of the deep brain stimulation device was found to be accidentally turned off. As soon as the electrode was turned on, motor impairment improved and her mood switched from depression to mania. The authors speculate that the lateral balance of stimulation plays an important role in mood regulation. The current report provides an intriguing insight into possible mechanisms of mood swing in mood disorders.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 V
• /
• pp.2887-2890
• /
• 2003

This paper describes the possibility of analyzing gait pattern from the variation of the lower leg electrical impedance. This impedance is measured by the four-electrode method. Two current electrodes are applied to the thigh, knee, and foot, and two potential electrodes are applied to the lateral, medial, and posterior position of lower leg. The correlation coefficients of the joint angle and the impedance change from human leg movement was obtained using electrogoniometer and 4ch impedance measurement system developed in this study. We found the optimal electrode position for ankle, knee and hipjoint movements based on high correlation coefficient, least interference, and maximum magnitude of impedance change. The correlation coefficients of the ankle, knee, and the hip movements -0.87, 0.957 and 0.80. respectively. From such features of the lower leg impedance, it has been made clear that different movement patterns exhibit different impedance patterns and impedance level. This system showed possibility that lower leg movement could be easily measured by impedance measurement system with a few skin-electrodes.

• 한국세라믹학회지
• /
• 제37권6호
• /
• pp.530-536
• /
• 2000

During the grain growth of the PZT thin films by selective nucleation method using PZT seed, it was found that the grain size was saturated with the annealing temperature. The saturation of grain size was analyzed by the interfacial energy which appeared during the crystallization. The factors affecting the saturation of grain size were found to be the interfacial energy between perovskite phase and pyrochlore phase, and PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the grain-size saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interfacial energy between the PZT thin film and the Pt bottom electrode. When Pt thickness was increased, the grain size was also increased, because the lattice parameter of Pt films was increased with the thickness of the Pt films. The incubation time of nucleation was increased with the amount of the ion damage on the Pt films.

• 한국전기전자재료학회논문지
• /
• 제20권3호
• /
• pp.250-256
• /
• 2007

We analyzed the effect of a pixel and all the inter-electrode capacitances in a unit pixel of TFT-LCDs on the gray scale capability. The pixel and all the inter-electrode parasitic capacitances were obtained from the tree dimensional profiles of potential distribution and molecular director considering lateral fields generated at the edge of the pixel. To obtain the RMS and kickback voltages of the pixel, we constructed an equivalent circuit of the panel containing all the parasitic capacitances. The calculation was performed though H-SPICE. As results, we confirmed that the pixel becomes smaller, the effect of parasitic capacitances on the gray scale capability becomes larger.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 D
• /
• pp.1462-1464
• /
• 1998

Poly-Si TFT(Thin Film Transistor) is a electronic device that can be applied to the field of large area electronics such as AMLCD. We have fabricated the poly-Si TFT with lateral body terminal that is counter-doped body electrode and investigated the electrical characteristics of it. The lateral body terminal being short with s terminal, we have measured the transfer charac (Vg-ld) and the output characteristic (Vd-ld) fabricated devices. The measured result showe only that leakage current in OFF-state was re and Kink effect in ON-state was suppressed bu that in output characteristic curve the output Id was sustained constantly with the output v Vd in the saturation region.

• 한국전기전자재료학회논문지
• /
• 제15권9호
• /
• pp.750-757
• /
• 2002

A new lateral trench LTEIGBT with p+ diverter was proposed to suppress latch-up of LTIGBT The p+ diverter was placed between the anode and cathode electrode. The latch-up of LTEICBT with a p+ diverter was effectively suppressed to sustain an anode voltage of 8.7V and a current density of 1453A/$\textrm{cm}^2$ while in the conventional LTIGBT, latch-up occured at an anode current density of 540A/$\textrm{cm}^2$. In addition, the forward blocking voltage of the proposed LTEIGBT with a p+ diverter was about 140V. The forward blocking voltage of the conventional LTIGBT of the same size was no more than 105V, We fabricated the proposed LTEIGBT with a p+ diverter after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT with a p+ diverter and the conventional LIGBT are 90㎃ and 70㎃, respectively, at the same breakdown voltage of 150V.