• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.82-83
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• 1999

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.88-89
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.38.1-38
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• 1998

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.30-34
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• 2005

This study shows the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor (DOT) using the vertical window. The measured switching voltage and current are 3.36 V and 10 ㎂, respectively. The lasing threshold current is 131 mA at 25 ℃. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is not input signal anymore in the output port. The vertical injection depleted optical thyristor - laser diode (VIDOT-LD) using the vertical-injection structure shows very good isolation between input and output signal.

• Journal of the Korean Geophysical Society
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• v.4 no.4
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• pp.297-311
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• 2001

The gain-clamped EDFA has been developed to eliminate the output power change of WDM surving channels to occur with added or dropped channels, which degrades the performance of WDM optical network. It maintains the constant gain of surviving channels when WDM channels are added or dropped in a network amplifying node. In this paper, the bi-directionally pumped gain-clamped EDFA is implemented to compensate the change of the input power by a lasing. The results show that the lasing of a short wavelength and backward propagation is the optimal condition to minimize the transient response of surviving channels in terms of the overshoot and gain saturation due to the inhomogeneous broadening effect.

• Korean Journal of Optics and Photonics
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• v.8 no.2
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• pp.111-115
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• 1997

Vertical-cavity surface-emitting laser(VCSEL)s operating at 1.3-micron wavelength for optical communication are fabricated by using Si/SiO$_2$dielectric quater-wave pairs on both sides of the InGaAsP(${\lambda}_g$=1.3 ${\mu}{\textrm}{m}$) gain material. VCSELs are optically pumped with a Nd-YAG laser in a pulsed mode and lasing around 1.3 microns is observed. Lasing characteristics such as threshold pump intensity as a function of mirror-reflectivity, polarization, and threshold pump density with pump spot size are investigated.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.245-252
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• 1996

$\lambda$/4 phase-shifted DFB lasers with nonideal grating structure have been studied by using an effective-index transfer matrix method where material dispersion, vwaveguide dispersion and waveguide-structuredependent loss are taken into consideration. Nonideal grating structure in the center phase-shift region does not incur serous degradation of laser characteristics. Phase-shift error from the ideal shift of $\pi$ causes a decrease in the threshold gain difference and lasing wavelength shift and should be less than $\pi$/4 when residual facet reflectivity is 0.7%. also, positional error of the phase-shift should be less than 9% of the cavity length in order for the threshold gain difference to be decreased less than 10%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1094-1097
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• 2003

In this paper, the cavity-length-dependent spectral and temporal characteristics of a V-groove AlGaAs-GaAs quantum wire (QWR) laser at each subband were investigated. At short cavity lasers less than $300{\mu}m$, a discrete wavelength switching from the n=1 to the n=2 subband occurred due to the increased threshold gain, resulting from the increased cavity loss. Using the characteristic of the wavelength shift from n=1 to the n=2 subband with shortening the cavity length, ultrafast lasing behaviors under gain switching at the n=1 and the n=2 subband transition were demonstrated and compared.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1580-1584
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• 2009

We have theoretically analyzed the monolithic integration of vertical cavity lasers with depleted optical thyristor (VCL-DOT) structure and experimentally demonstrated optical logic gates such as AND-gate, OR-gate, and INVERTER implemented by VCL-DOT for an optical programmable gate array. The optical AND and OR gates have been realized by changing a input bias of the single VCL-DOTs and all kinds of optical logic functions are also implemented by adjusting an intensity of the reference input beams into the differential VCL-DOTs. To achieve the high sensitivity, high slope efficiency and low threshold current, a small active region of lasing part and a wide detecting area are simultaneously designed by using a selective oxidation process. The fabricated devices clearly show nonlinear s-shaped current-voltage characteristics and lasing characteristics of a low threshold current with 0.65 mA and output spectrum at 854 nm.

• Korean Journal of Optics and Photonics
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• v.5 no.2
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• pp.291-297
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• 1994

A feedback loop with bandpass filter is introduced in erbium-doped fiber amplifier to clamp the amplifier gain by lasing the amplifier at a selected wavelength. The gain and the ASE (amplified spontaneous emission) output spectra are found to be independent of input signal power and pump power variation so long as the amplifier is lasing. Also they are found to be dependent only on the overall loss of the feedback loop. Even in the case of slowly modulated large signal input, signal distortion due to gain saturation is not observed.served.