• 제목/요약/키워드: Laser via

검색결과 345건 처리시간 0.022초

UV 레이저에 의한 블라인드 비아홀 가공 (Blind via Hole manufacturing technology using UV Laser)

  • 장정원;김재구;신보성;장원석;황경현
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 추계학술대회 논문집
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    • pp.160-163
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    • 2002
  • Micro via hole Fabrication is studied by means of minimizing method to circuit size as many electric products developed to portable and minimize. Most of currently micro via hole fabrication using laser is that fabricate insulator layer using CO2 Laser after Cu layer by etching, or fabricate insulator layer using IR after trepanning Cu by UV. In this paper, it was performed that a metal layer and insulator layer were worked upon only one UV laser, and increase to processing speed by experiment.

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인쇄회로기판의 미세 신호 연결 홀 형성을 위한 레이저 드릴링 시스템 (Laser Drilling System for Fabrication of Micro via Hole of PCB)

  • 조광우;박홍진
    • 한국정밀공학회지
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    • 제27권10호
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    • pp.14-22
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    • 2010
  • The most costly and time-consuming process in the fabrication of today's multi-layer circuit board is drilling interconnection holes between adjacent layers and via holes within a layer. Decreasing size of via holes being demanded and growing number of via holes per panel increase drilling costs. Component density and electronic functionality of today's multi-layer circuit boards can be improved with the introduction of cost-effective, variable depth laser drilled blind micro via holes, and interconnection holes. Laser technology is being quickly adopted into the circuit board industry but can be accelerated with the introduction of a true production laser drilling system. In order to get optimized condition for drilling to FPCB (Flexible Printed Circuit Board), we use various drill pattern as drill step. For productivity, we investigate drill path optimization method. And for the precise drilling the thermal drift of scanner and temperature change of scan system are tested.

High -Rate Laser Ablation For Through-Wafer Via Holes in SiC Substrates and GaN/AlN/SiC Templates

  • Kim, S.;Bang, B.S.;Ren, F.;d'Entremont, J.;Blumenfeld, W.;Cordock, T.;Pearton, S.J.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권3호
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    • pp.217-221
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    • 2004
  • [ $CO_2$ ]laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 ${\mu}m.min^{-1}$ were obtained for pulse energies of 7.5-30 mJ over diameters of 50·500 ${\mu}m$ with a Q-switched pulse width of ${\sim}30$ nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 ${\mu}m/min$) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/AlN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate subsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching.

MEMS 소자의 비아 홀에 대한 레이저 공정변수의 최적화 (Optimization of Laser Process Parameters for Realizing Optimal Via Holes for MEMS Devices)

  • 박시범;이철재;권희준;전찬봉;강정호
    • 대한기계학회논문집A
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    • 제34권11호
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    • pp.1765-1771
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    • 2010
  • MEMS 소자의 공정에서 가공된 비아 홀 품질은 소자의 성능에 가장 중요한 요소의 하나이다. Nd:$YVO_4$ 레이저로 가공한 비아 홀에 대한 레이저 미세가공의 일반적인 특징을 설명하고 그것의 측정에 대한 효율적인 최적화 방법을 소개한다. 본 논문의 최적화 방법은 직교다항식, 분산분석과 반응표면최적화는 최적 레이저 공정변수를 결정하고 주요 영향을 이해하는데 사용된다. 유의한 레이저 공정변수를 확인하고 이의 비아 홀 품질에 관한 영향을 고찰하였다. 레이저 공정변수의 최적 수준을 가지는 확인 실험은 최적화 방법의 유효성을 설명하기 위해 수행하였다.

팸토초 레이저를 이용한 3차원 패키징 기술 (3D Packaging Technology Using Femto Laser)

  • 김주석;신영의;김종민;한성원
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2006년 추계학술발표대회 개요집
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    • pp.190-192
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    • 2006
  • The 3-dimensional(3D) chip stacking technology is one of the leading technologies to realize a high density and high performance system in package(SIP). It could be found that it is the advanced process of through-hole via formation with the minimum damaged on the Si-wafer. Laser ablation is very effective method to penetrate through hole on the Si-wafer because it has the advantage that formed under $100{\mu}m$ diameter through-hole via without using a mask. In this paper, we studied the optimum method for a formation of through-hole via using femto-second laser heat sources. Furthermore, the processing parameters of the specimens were several conditions such as power of output, pulse repetition rate as well as irradiation method and time. And also the through-hole via form could be investigated and analyzed by microscope and analyzer.

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DPSS UV 레이저를 이용한 블라인드 비아 홀 가공 (Blind Via Hole Drilling Using DPSS UV laser)

  • 김재구;장원석;신보성;장정원;황경현
    • 한국레이저가공학회지
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    • 제6권1호
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    • pp.9-16
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    • 2003
  • Micromachining using the DPSS 3rd Harmonic Laser (355nm) has outstanding advantages as a UV source in comparison with Excimer lasers in various aspects such as maintenance cost, maskless machining, high repetition rate and so on. It also has the greater absorptivity of many materials in contrast to other IR sources. In this paper, the process for micro-drilling of blind hole in Cu/PI/Cu substrate with the DPSS UV laser and the scanning device is investigated by the experimental methods. It is known that there is a large gap between the ablation threshold of copper and that of PI. We use the Archimedes spiral path for the blind hole with different energy densities to ablate the different material. Finally, the blind via hole of diameter 100$\mu\textrm{m}$ and 50$\mu\textrm{m}$ was drilled.

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피코초 레이저 드릴링 공정 및 플랫폼 (Picoseconds Laser Drilling and Platform)

  • 서정;신동식;손현기;송준엽
    • 한국정밀공학회지
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    • 제27권10호
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    • pp.40-44
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    • 2010
  • Laser drilling is an enabling technology for Through Silicon Via (TSV) interconnect applications. Recent advances in picoseconds laser drilling of blind, micron sized vias in silicon is presented here highlighting some of the attractive features of this approach such as excellent sidewall quality. In this study, we dealt with comparison of heat affection around drilled hole between a picosecond laser and a nanosecond laser process under the UV wavelength. Points which special attention should be paid are that picosecond laser process lowered experimentally recast layer, surface debris and micro-crack around hole in comparison with nanosecond laser process. These finding suggests that laser TSV process has possibility to drill under $10{\mu}m$ via. Finally, the laser drilling platform was constructed successfully.

평면 선해리 레이저유도 형광법과 레이래이 분산법을 이용한 연소실내의 OH 및 $O_2$의 2차원적 농도측정 (Two-dimensional $O_2$ and OH Density Measurement Using Tunable KrF Excimer Laser Light a Combustion Bomb via Planar Laser Induced Predissociative Fluorescence and Laser Rayleigh Scattering)

  • 김경수
    • 한국자동차공학회논문집
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    • 제2권4호
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    • pp.91-99
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    • 1994
  • Tunable KrF Excimer Laser is used here for measuring OH and $O_2$ density distribustion in an open $H_2$/air premixed flame and in a combustion bomb. Laser Rayleigh Scattering(LRS) and Planar Laser Induced Predissociative Fluorescence(PLIPF) methods are used to obtain two-dimensional images of total and specific densities. Laser Excitation wavelengths are calibrated via flame images and combustion bomb images show good qualitative a greement with theoretical calculation. Furthermore images in a combustion bomb can be developed to study real Spark-Ignition engine combustions. Our experimental images show that there are no more collisional quenching problem at high pressure environment(including atmospheric pressure) using predissociative fluorescence technique. Further development to obtain two-dimensional temperature dustribution is ready to use eventhough it is not reported in this paper.

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