• 제목/요약/키워드: Laser etching

검색결과 255건 처리시간 0.028초

엑사이머 레이져를 이용한 실리콘웨이퍼의 미세가공

  • 윤경구;이성국;황경현
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1997년도 춘계학술대회 논문집
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    • pp.1058-1062
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    • 1997
  • Development of laser induced chemical etching technologt with KrF laser are carried out in this study for micromachining of silicon wafer. The paper is devoted to experimental identification of excimer laser induced mechanism of silicon under chlorine pressures(0.02~500torr). Experimental results on pulsed KrF excimer laser etching of silicon in chorine atmosphere are presented. Etching rate dependency on laser fluence and chlorine pressure are discussed on the basis of experimental analysis, it is concluded that accurate digital micro machining process of silicon wafer can achieved by KrF laser induced chemical etching technology.

Laser CVD에 의한 Poly-Si 막의 퇴적 및 Laser etching 특성 (The Characteristics of poly-Si films Deposition by Laser CVD and Laser Etching)

  • 권경환;김영훈;신상우;김창덕;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 C
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    • pp.1550-1552
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    • 1996
  • Poly-Si films were deposited by Laser CVD using 193nm ArF Excimer Laser from disilane($Si_{2}H_{6}$) and then the films were etched by Laser Etching using the same Laser with SF6 etching gas. Dependence on various film deposition conditions and etching conditions was investigated respectively.

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Fabricating a Micro-Lens Array Using a Laser-Induced 3D Nanopattern Followed by Wet Etching and CO2 Laser Polishing

  • Seung-Sik Ham;Chang-Hwam Kim;Soo-Ho Choi;Jong-Hoon Lee;Ho Lee
    • 한국산업융합학회 논문집
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    • 제26권4_1호
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    • pp.517-527
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    • 2023
  • Many techniques have been proposed and investigated for microlens array manufacturing in three-dimensional (3D) structures. We present fabricating a microlens array using selective laser etching and a CO2 laser. The femtosecond laser was employed to produce multiple micro-cracks that comprise the predesigned 3D structure. Subsequently, the wet etching process with a KOH solution was used to produce the primary microlens array structures. To polish the nonoptical surface to the optical surface, we performed reflow postprocessing using a CO2 laser. We confirmed that the micro lens array can be manufactured in three primary shapes (cone, pyramid and hemisphere). Compared to our previous study, the processing time required for laser processing was reduced from approximately 1 hour to less than 30 seconds using the proposed processing method. Therefore, micro lens arrays can be manufactured using our processing method and can be applied to mass productionon large surface areas.

레이저습식각을 이용한 용융실리카의 미세구멍가공 (Micro-drilling of Fused Silica by Laser Induced Wet Etching)

  • 백병선;이종길;전병희
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 춘계학술대회
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    • pp.1344-1348
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    • 2003
  • It is generally known to be difficult to etch a surface of a transparent material such as fused silica by conventional laser ablation in which the surface is simply irradiated with a laser beam. A lot of studies have been done to provide a method capable of efficiently etching transparent materials without defects such as cracks. One of the promising methods or the micro-machining of optically transparent materials is laser induced etching. In this study, micro-drilling of fused silica by laser induced wet etching was conducted. KrF excimer and YAG laser were used as light sources. Acetone solution pyrene and ethanol solution of rhodamine were used as etchant.

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KrF 엑사이머 레이저 법을 이용한 다이아몬드 박막의 평탄화 (Planarization of Diamond Films Using KrF Excimer Laser Processing)

  • 이동구
    • 열처리공학회지
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    • 제13권5호
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    • pp.318-323
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    • 2000
  • The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

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식각액에 따른 용융실리카의 레이저 습식 식각 특성 비교 연구 (A Comparative Study on the Influence of Etchant upon the Etching Rate and Quality in Laser Induced Wet Etching of Fused Silica)

  • 이종호;이종길;전병희
    • 소성∙가공
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    • 제13권3호
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    • pp.268-272
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    • 2004
  • Transparent materials such as fused silica are widely utilized in optical and optoelectronics field because of its outstanding properties, such as transparency in a wide wavelength range, strong damage resistance for laser irradiation, and high thermal and chemical stability. In this study, we made a few micro patterns on the surface of fused silica plate using laser induced wet etching. KrF excimer laser was used as a light source. There were no burrs and micro cracks on the etched surface of fused silica and the flatness of the etched surface was fairly good. We investigated the influence of etchant upon the etch rate and quality in laser induced wet etching. Pyrene-acetone solution and toluene were used as etchant. In the side of etch rate, toluene solution was better than pyrene-acetone solution. But we made in wider range of energy density using pyrene-acetone solution. But pyrene-acetone solution gave us wider window of energy density for successful micro patterning.

인쇄 롤의 간접식 레이저 가공을 위한 코팅과 에칭 기술 (Coating and Etching Technologies for Indirect Laser processing of Printing Roll)

  • 이승우;김정오;강희신
    • 한국레이저가공학회지
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    • 제16권4호
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    • pp.12-16
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    • 2013
  • For mass production of electronic devices, the processing of the printing roll is one of the most important key technologies for printed electronics technology. A roll of printing process, the gravure printing that is used to print the electronic device is most often used. The indirect laser processing has been used in order to produce printing roll for gravure printing. It consists of the following processing that is coating of photo polymer or black lacquer on the surface of printing roll, pattering using a laser beam and etching process. In this study, we have carried out study on the coating and etching for $25{\mu}m$ line width on the printing roll. To do this goals, a $4{\mu}m$ coating thickness and 20% average coating thickness of the coating homogeneity of variance is performed. The factors to determine the thickness and homogeneity are a viscosity of coating solution, the liquid injection, the number of injection, feed rate, rotational speed, and the like. After the laser patterning, a line width of $25{\mu}m$ or less was confirmed to be processed through etching and the chromium plating process.

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레이저를 이용한 미세에칭에 관한 연구 (A Study on the Argon Laser Assisted Thermochemical Micro Etching)

  • 박준민;정해도
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2001년도 춘계학술대회 논문집
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    • pp.844-847
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    • 2001
  • The application of laser direct etching has been discussed, and believed that the process is a very powerful method for micro machining. This study is focused on the micro patterning technology using laser direct etching process with no chemical damage of the material surface. A new introduced concept of energy synergy effect for surface micro machining is the combination of chemically ion reaction and laser thermal process. The etchant can't etch the material in room temperature, and used Ar laser has not power enough to machine. But, the machining is occurred in local area of the material by the combined energy. Using this process, the material is especially prevented from chemical damage for electric property. We have tested this new concept, and achieved a line with $1{mu}m$ width. The Ar laser with 488nm wavelength was used. The material was Si(100) wafer, and etchant is KOH solution. The application and flexibility of this process is in great hopes for MEMS structures and fabrication of the micro electric device parts.

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브라켓 부착을 위한 변형된 레이저 부식법 (Modified laser etching technique of enamel for bracket bonding)

  • 윤민성;이상민;양병호
    • 대한치과교정학회지
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    • 제40권2호
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    • pp.87-94
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    • 2010
  • 전단결합강도를 강화하기 위해 레이저를 이용한 부식과 산을 이용한 부식의 비교 연구가 많이 진행되어왔다. 본 연구에서는 Er,Cr:YSGG laser와 전통적인 산부식법을 혼합한 방법의 전단결합강도의 변화에 대한 평가를 하고자 한다. 교정적인 목적으로 발치된 64개의 건전한 소구치를 이용하여 16개씩 4개의 군으로 나누었다. 첫 번째 군은 37% 인산을 15초 적용시키는 전통적인 부식 방법을 택하였고, 두 번째 군은 물방울레이저로 1.5 W로 10초간 부식시킨 후 전통적인 산부식 방법을 시행하였다. 세 번째 군은 두 번째 군과 같지만 산부식을 먼저 시행한 후 물방울레이저로 부식시켰다. 네 번째 군은 물방울레이저를 이용하여 1.5 W로 15초간 부식시켰다. 이후 전단결합강도의 측정 및 치아 표면의 특징 관찰, 그리고 접착제잔류지수를 평가하였다. 두 번째, 세 번째 군은 첫 번째, 네 번째 군에 대하여 전단결합강도가 높게 측정되었다. 하지만 두 가지 기법의 복합사용 순서를 달리한 두 번째, 세 번째 군 사이에는 통계적으로 유의한 차이가 나지 않았다. 기존 산부식을 이용한 브라켓 접착법보다 산부식과 Er,Cr:YSGG laser를 복합적으로 사용 시, 향상된 전단결합강도를 얻을 수 있다.

플렉서블 기판 전/후면에서의 레이저를 이용한 ITO/Ag/ITO 전극층의 식각 특성 (Laser Etching Characteristics of ITO/Ag/ITO Conductive Films on Forward/Reverse Sides of Flexible Substrates)

  • 남한엽;권상직;조의식
    • 한국전기전자재료학회논문지
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    • 제29권11호
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    • pp.707-711
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    • 2016
  • ITO/Ag/ITO conductive films on PET (polyethylene terephthalate) was etched by a Q-switched diode-pumped neodymiun-doped yttrium vanadate (Nd:YVO4, ${\lambda}=1064nm$) laser. During the laser direct etching, the laser beam was incident on the two different directions of PET and the etching patterns were investigated and analyzed. At a lower repetition rate of laser pulse, the larger laser etched patterns were obtained by laser beam incident on reverse side of PET substrate. On the contrary, at a higher repetition rate, it was possible to find the larger etched patterns in case of the laser beam incidence on forward side of PET substrate. For the laser beam incidence on reverse side, the laser beam is expected to be transferred and scattered through the PET substrate and the laser beam energy is thought to be dependent on the etch laser pulse beam energy.