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Laser Etching Characteristics of ITO/Ag/ITO Conductive Films on Forward/Reverse Sides of Flexible Substrates

플렉서블 기판 전/후면에서의 레이저를 이용한 ITO/Ag/ITO 전극층의 식각 특성

  • Nam, Hanyeob (Department of Electronic Engineering, Gachon University) ;
  • Kwon, Sang Jik (Department of Electronic Engineering, Gachon University) ;
  • Cho, Eou-Sik (Department of Electronic Engineering, Gachon University)
  • Received : 2016.07.08
  • Accepted : 2016.07.20
  • Published : 2016.11.01

Abstract

ITO/Ag/ITO conductive films on PET (polyethylene terephthalate) was etched by a Q-switched diode-pumped neodymiun-doped yttrium vanadate (Nd:YVO4, ${\lambda}=1064nm$) laser. During the laser direct etching, the laser beam was incident on the two different directions of PET and the etching patterns were investigated and analyzed. At a lower repetition rate of laser pulse, the larger laser etched patterns were obtained by laser beam incident on reverse side of PET substrate. On the contrary, at a higher repetition rate, it was possible to find the larger etched patterns in case of the laser beam incidence on forward side of PET substrate. For the laser beam incidence on reverse side, the laser beam is expected to be transferred and scattered through the PET substrate and the laser beam energy is thought to be dependent on the etch laser pulse beam energy.

Keywords

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