• 한국기계가공학회지
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• 제18권10호
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• pp.93-98
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• 2019

Recently, with the development of the aerospace and automotive industries, the demand for high-melting-point materials has increased. However, high-melting-point materials are difficult to cut through conventional machining methods. Thermally assisted machining (TAM) is a method for improving the machinability by preheating the materials. A laser, the most commonly used device for TAM, has high efficiency through local preheating but is not sufficient for maintaining a high preheating temperature due to rapid cooling. However, the use of multi-heat sources can supplement the disadvantage of a single heat source. The high preheating temperature can be maintained with a wide and deep heat-affected zone (HAZ) by multi-heat sources. The purpose of this study is to analyze the preheating effects of multi-heat sources using laser plasma. Thermal analysis and preheating experiments were carried out. As a result, the high preheating effect of multi-heat sources compared with a single heat source was verified.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.652-655
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• 2001

In this paper, I have studied minimization of the kerf-width and surface burning which are occurred after the singulation process of multi layer $\mu$-BGA( thickness 1.1 mm, 0.9 mm) with a pulsed Nd:YAG( = 532 nm, repetition rate = 10 Hz) laser. The thermal energy of a pulsed Nd:YAG laser is used to cut the copper layer. I have studied are minimization of the surface burning and kerf-width using a photo resist, $N_2$blowing and polyester double sided tape as a cutting parameter. The $N_2$blowing reduces a laser energy loss by debris and suppresses a surface carbonization. Also, I have studied characters of cutting with a choice of side of laser beam incidence. The SEM(Scanning Electron Microscope), non-contact 3D inspector and high-resolution microscope are used to measure kerf width and surface state. The optimum value of 1.1 mm $\mu$-BGA singulation is 524 $\mu$m that is reduced kerf width of 60 % with $N_2$blowing. And I obtained reduction of carbonization of 68 % with a polyester double side tape in 0.9 mm $\mu$-BGA. I used laser intensity of 1.91$\times$10$^{6}$ / $\textrm{cm}^2$ in this study.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.627-631
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• 2005

In this study, low fatigue behavior of laser welded sheet metal were investigated. Before welding, the cross section of butt joint was prepared only by fine shearing without milling process. Specimens were same sheet metal and welding condition that using automobile manufacturing company at present. Butt joint of cold rolled sheet metal was welded by $CO_2$ laser. It is used that welding condition such as laser welding speed was 5.5m/sec and laser output power was 5kW for 0.8mm and 1.2mm sheet metal. The laser weldments were machined same or different thickness and same or different material. In order to mechanical properties of around welding zone, hardness test was performed. Hardness of welding bead is about 2 times greater than base material. We performed the low cycle fatigue tests for obtaining fatigue properties about thickness and the weld line direction of specimen. The results of strain controlled low cycle fatigue test indicate that all specimens occur cyclic softening, as indicated by the decrease in stress to reach a prescribed strain.

• Journal of Welding and Joining
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• 제15권3호
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• pp.99-108
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• 1997

For the conventional welding method, the high heat transfer makes the crystallization of the work material unavoidable. Whereas the laser is able to weld the amorphous metal without a crystallized zone, because heat transfer is limited withn a very small restricted volume. In this paper, the possibilities and the limits of the laser welding in a deep frozen environment by liquid nitrogen were studied to utilize the advantageous properties of amorphous metal foils. The author investigated, after laser welding in a deep frozen environment with a solid state laser (Nd:YAG-laser), the achievable strengths and the influences of the laser beam parameters on the strengths.

• 소성∙가공
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• 제20권8호
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• pp.575-580
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• 2011

Direct laser melting(DLM) is promising as a joining method for producing parts for automobiles, aerospace, marine and medical applications. An advantageous characteristic of DLM is that it affects the parent metal very little. The mechanical properties of parts made by DLM are strongly affected by the porosity and surface roughness of the laser melted beads. This is a systematic study of the effects of the porosity and surface roughness of laser melted beads using various processing parameters, such as laser power, scan rate and overlapping ratio of the fill spacing. The specimens were fabricated with 316L and 304L austenitic stainless steel powder. Dense parts with low porosity were obtained at low laser scan speed, as it increased the aspect ratio of the parental material and the depth of penetration. The variations of surface roughness were examined at various processing parameters such as overlapping ratio and laser power.

• 한국군사과학기술학회지
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• 제18권3호
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• pp.293-299
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• 2015

We analyzed the damage effect on Glass Fibre Reinforced Plastics(GFRP) under air flow by irradiation of continuous wave near-IR laser. Damage process and temporal temperature distribution were demonstrated and material characteristics were observed with laser intensity, surface flow speed and angle. Surface temperature on GFRP rapidly increased with laser intensity, and the damaged pattern was different with flow characteristics. In case of no flow, penetration on GFRP by burning and flame generation after laser irradiation was appeared at once. GFRP was penetrated by the heat generated from resin ignition. In case of laser irradiation under flow, a flame generated after burning extinguished at once by flow and penetration pattern on GFRP were differently shown with flow angle. From the results, we presented the damage process and its mechanism.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권4호
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• pp.261-268
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• 1999

Laser-induced thermochemical etching has been recognized as a new powerful method for processing a variety of materials, including metals, semiconductors, ceramics, insulators and polymers. This study presents characteristics of direct etching for Si substrate using focused argon ion laser beam in aqueous KOH and $CCl_2F_2$ gas. In order to determine process conditions, we first theoretically investigated the temperature characteristics induced by a CW laser beam with a gaussian intensity distribution on a silicon surface. Major process parameters are laser beam power, beam scan speed and reaction material. We have achieved a very high etch rate up to $434.7\mum/sec$ and a high aspect ratio of about 6. Potential applications of this laser beam etching include prototyping of micro-structures of MEMS(micro electro mechanical systems), repair of devices, and isolation of opto-electric devices.

• 한국정밀공학회지
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• 제22권7호
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• pp.27-37
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• 2005

Direct writing technology on the silicon wafer surface is used to reduce the size of the chip as the miniature trend in electronic circuit. In order to improve the productivity and efficiency, the real time quality estimation is very important in each semiconductor process. In laser marking, marking quality is determined by readability which is dependant on the contrast of surface, the line width, and the melting depth. Many researchers have tried to find theoretical and numerical estimation models fur groove geometry. However, these models are limited to be applied to the real system. In this study, the estimation system for the line width during the laser marking was proposed by process monitoring method. The light intensity emitted by plasma which is produced when irradiating the laser to the silicon wafer was measured using the optical sensor. Because the laser marking is too fast to measure with external sensor, we build up the coaxial monitoring system. Analysis for the correlation between the acquired signals and the line width according to the change of laser power was carried out. Also, we developed the models enabling the estimation of line width of the laser marking through the statistical regression models and may see that their estimating performances were excellent.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.367-372
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• 2020

As packaging processes for atomic gyroscope vapor cells, the glass tube tip-off process, anodic bonding, and paste sealing have been widely studied. However, there are stability issues in the alkali metal which are caused by impurity elements and leakage during high-temperature processes. In this study, we investigated the applicability of a vapor cell low-temperature packaging process by depositing Au on a Pyrex cell in addition to forming an Au-Sn thin film on a cap to cover the cell, followed by laser irradiation of the Au/Au-Sn interface. The mechanism of the thin film bonding was evaluated by XRD, while the packaging reliability of an Ne gas-filled vapor cell was characterized by variation of plasma discharge behavior with time. Furthermore, we confirmed that the Rb alkaline metal inside the vapor cell showed no color change, indicating no oxidation occurred during the process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.98-101
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• 1990

In order to investigate the laser effects resulted from the behaviors of carriers for BOPP film, experiment of TSC were carried out on the specimen with 15[$\mu\textrm{m}$] thick irradiated by He-Ne laser. The TSC spectras were observed in the temperature range of -100[$^{\circ}C$] to 130[$^{\circ}C$] with the electric field of 20∼60[MV/m], had show four of the distinguished peak such as ${\alpha}$$_1$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$, which appeared at 115, 80, 17 and -30[$^{\circ}C$] respectively. Specially, ${\alpha}$$_1$ was observed and anomalous TSC flowing in the same direction as the charging current on the high-electric field such as 50∼60[MV/m]. In according on the consequences obtained from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.