• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.99-100
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• 2007

ZnO films on $Al_2O_3$ substrates were grown using a pulsed laser deposition method. Through photoluminescence (PL) and X-ray diffraction (XRD) measurements, the optimum growth conditions for the ZnO growth were established. The results of the XRD measurements indicate that ZnO films were strongly oriented to the c-axis of the hexagonal structure and epitaxially crystallized under constraints created by the substrate. The full width half maximum for a theta curve of the (0002) peak was $0.201^{\circ}$. Also, from the PL measurements, the grown ZnO films were observed to give free exciton behaviour, which indicates a high quality of the epilayer. The Hall mobility and carrier density of the ZnO films at 293 K were estimated to be $299\;cm^2/V\;s$ and $8.27\;{\times}\;10^{16}\;cm^{-3}$, respectively. The absorption spectra revealed that the temperature dependance of the optical band gap on the ZnO films was $E_g(T)\;=\;3.439\;eV\;-\;(5.30\;{\times}\;10^{-4}\;ev/K)T^2(367\;+\;T)$.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.388-390
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• 1994

We are familiar with the holography in these days. For making holography the coherent sources like LASER are used in many fields. But coherent holography has many problems. Coherent holography needs many instrument for practical use like 3-D TV case. In solving the problem we use the non-coherent source. Nowadays many methods like conoscopic holo graphy using anisotropic crystal, shadow casting and interferometric systems are suggested. In this paper we make the hologram using the triangular interferometric systems. [1],[2],[3],[4]. We explain the afocal and double-afocal system which consists of the triangular interferometric system. The holography made in one point and two point cases is imaged on CCD camera and we handle the image data digitally for the reconstruction efficiently. In reconstructing the hologram the Fraunhofer diffraction theory is used. We adopt the rectangular aperture for the convenience of calculation. In the future we must reconstruct the perfect 3-Dimensional object by optical method. For this, we have many problems like resolution problem. We must solve these problem for perfect reconstruction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.92-95
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• 2005

The silver photodoping effect in amorphous AsGeSeS chalcogenide thin films for holographic recording has been investigated using a HeNe laser ($\lambda$=632.8 nm). The chalcogenide films prepared in this work were thinner in comparison with the penetration depth of recording light ($d_p$=1.66 mm). The variation of the diffraction efficiency $(\eta)$ in amorphous chalcogende films exhibits a tendency, independently of the Ag photodoping. That is, n increases relatively rapidly at the beginning of the recording process, reaches the maximum $({\eta}_{max})$ and slowly decreases. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its peak among the films with d = 40, 80, 150, 300, and 633 nm is observed at d = 150 nm (approximately 1/2n), where n is refractive index of the chalcogenide (n=2.0). The ${\eta}$ is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of hmax in a bilayer of 10-nm-thick Ag/150-nm-thick AsGeSeS film is about 1.6%, which corresponds to ~20 times in comparison with that of the AsGeSeS film (without Ag).

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.333-337
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• 2020

Orthorhombic DyMnO₃ films are fabricated epitaxially on Nb-1.0 wt%-doped SrTiO₃ single crystal substrates using pulsed laser deposition technique. The structure of the deposited DyMnO₃ films is studied by X-ray diffraction, and the epitaxial relationship between the film and the substrate is determined. The electrical transport properties reveal the diodelike rectifying behaviors in the all-perovskite oxide junctions over a wide temperature range (100 ~ 340 K). The forward current is exponentially related to the forward bias voltage, and the extracted ideality factors show distinct transport mechanisms in high and low positive regions. The leakage current increases with increasing reverse bias voltage, and the breakdown voltage decreases with decrease temperature, a consequence of tunneling effects because the leakage current at low temperature is larger than that at high temperature. The determined built-in potentials are 0.37 V in the low bias region, and 0.11 V in the high bias region, respectively. The results show the importance of temperature and applied bias in determining the electrical transport characteristics of all-perovskite oxide heterostructures.

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.252-259
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• 1993

A holosymmetric four-mirror system with unit magnification is designed for use in the micro-lithography using a deep ultraviolet wavelength of $0.248 {\mu}m$(KrF excimer laser line). In the holosymmetric system all orders of coma and distortion are zero. By applying this principle to the 4-spherical mirror system, we have obtained only one exact solution for the unit magnification holosymmetric four-spherical mirror system with all zero third order aberrations. For correction of the residual higher order aberrations of the system, aspherization is introduced keeping the holosymmetric properties. We have obtained near diffraction-limited performance for the wavelength of 0.248 pm within N.A. of 0.33 and image field diameter of 7.6 mm.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.143.2-143.2
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• 2013

Nanomechanical and electrical properties of vanadium dioxide (VO2) thin films across thermal-driven phase transition are investigated with ultra-high vacuum atomic force microscopy. VO2 thin films have been deposited on the n-type heavily doped silicon wafer by pulsed laser deposition. X-ray diffraction reveals that it is textured polycrystalline with preferential orientation of (100) and (120) planes in monoclinic phase. As the temperature increases, the friction decreased at the temperature below the transition temperature, and then the friction increased as increasing temperature above the transition temperature. We attribute this observation to the combined effect of the thermal lubricity and electronic contribution in friction. Furthermore, the dependence of nanoscale conductance on the local pressure was indicated at the various temperatures, and the result was discussed in the view of pressure-induced metal-insulator transition.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.615-621
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• 1999

The new process in order to fabricate of Ni catalyst with high activity by the mechanochemical(MC) method which was combined the mechanical alloying(MA) and the chemical treatment process. The microstructure and characterization of mechanically alloyed Ni-5-wt% Al powder and Ni catalyst gained by alkali leaching were investigated byt he various analysis such as XRD, SEM-EDS, HRTEM and laser particle analyzer. The steady state powder with 1~2$\mu\textrm{m}$ mean particle size was obtained after 30hr milling with the PCA of 2 wt% stearic acid under the condition of grinding stainless steel ball to powder ratio of 60:1 and rotating speed fo 300rpm. According to result of HRTEM diffraction pattern, MA powder of the steady state was nanocrystalline $Al_3$$Ni_2$ intermetallic compound. Ni catalyst was obtained after KOH leaching of the steady state powder was about 20nm nanocrystalline which contained about 8 wt % Al.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.44-47
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• 1994

High $T_{c}$ superconducting $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$ thin film was grown up for c-axis orientation by epitaxial growth method on $LaAlO_{3}$ single crystal substrate. The crystal structures of this thin film were found to be c-axis orientation by X-ray diffraction patterns. Hall effect and resistivity measurements were made by van der Pauw method. Hall resistivity was calculated from the magnetoresistivity by considering thermomagnetic effect. The relation was $pH=p_{s}tan{\alpha}_{n}-QBT\frac{S_s}{K_s}$ The measured Hall resistivity and the calculated one are in good agreement each other.

• Journal of Powder Materials
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• v.26 no.3
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• pp.214-219
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• 2019

In this study, the microstructure and characterization of an overlay welding layer using Fe-based composite powders are reported. The effects of the number of passes and composition of powders on the microstructure and mechanical properties are investigated in detail. The welding wire and powders are deposited twice on a stainless-steel rod using a laser overlay welding process. The microstructure and structural characterization are performed by scanning electron microscopy and X-ray diffraction. The mechanical properties of the first and second overlay layers are analyzed through the micro-Vickers-hardness tester and abrasion wear tester. In the second overlay layer, the hardness and specific wear are approximately 840 Hv and $2.0{\times}10^{-5}mm^3/Nm$, respectively. It is suggested that the increase of the volume fractions of $(Cr,Fe)_7C_3$ and NbC phases in the second welding layer enhances the hardness and wear resistance.

• Journal of Powder Materials
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• v.28 no.5
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• pp.417-422
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• 2021

In the present work, Inconel 718 alloy is additively manufactured on the Ti-6Al-4V alloy, and a functionally graded material is built between Inconel 718 and Ti-6Al-4V alloys. The vanadium interlayer is applied to prevent the formation of detrimental intermetallic compounds between Ti-6Al-4V and Inconel 718 by direct joining. The additive manufacturing of Inconel 718 alloy is performed by changing the laser power and scan speed. The microstructures of the joint interface are characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and micro X-ray diffraction. Additive manufacturing is successfully performed by changing the energy input. The micro Vickers hardness of the additive manufactured Inconel 718 dramatically increased owing to the presence of the Cr-oxide phase, which is formed by the difference in energy input.