• Title/Summary/Keyword: Laser Diffraction

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Growth and Optical Properties for ZnO Thin Film by Pulesd Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 광학적 특성)

  • 홍광준;김재열
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2004.10a
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    • pp.233-244
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    • 2004
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

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Characteristic of ferroelectric properties of $(Bi,Ce)_4Ti_3O_{12}$ thin films deposited by pulsed laser deposition (Pulsed laser deposition 방법으로 증착된 $(Bi,Ce)_4Ti_3O_{12}$ 박막의 강유전 특성)

  • Oh, Young-Nam;Seong, Nak-Jin;Yoon, Soon-Gil;Jeon, Min-Gu;Woo, Seong-Ihl;Kim, Chang-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.168-171
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    • 2003
  • Bismuth layered structure, Cerium-substituted $Bi_4Ti_3O_{12}$ ($(Bi,Ce)_4Ti_3O_{12}$) thin films were prepared on the $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition method. We investigated the Ce-subsitituted effect on the grain orientation and ferroelectric properties. $Ce^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of BTO decreased the deeree of c-axis orientation and increased the remanent polariation (2Pr). The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The $(Bi,Ce)_4Ti_3O_{12}$ (BCT) thin films, which were annealed $700^{\circ}C\;and\;800^{\circ}C$ for 10min and 30min, showed a perovskite phase and dense microstructure. As the thickness of the BCT film was decresed that the ferroelectric properties of the BCT thin films were good.

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Growth and Effect of Thermal Annealing for ZnO Thin Film by Pulsed Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 열처리 효과)

  • 홍광준
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.5
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    • pp.467-475
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    • 2004
  • ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T+463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

Growth and dielectric Properties or $BaTiO_3/SrTiO_3$ oxide artificial superlattice deposited by pulsed laser deposition (PLD) (Pulsed laser depostion (PLD)법으로 증착된 $BaTiO_3/SrTiO_3$ 산화물 초격자의 성장 및 유전특성)

  • 김주호;김이준;정동근;김용성;이재찬
    • Journal of the Korean Vacuum Society
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    • v.11 no.3
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    • pp.166-170
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    • 2002
  • Artificial $BaTiO_3$(BTO)/$SrTiO_3$(STO) oxide superlattice have been deposited on MgO (100) single crystal substrate by pulsed laser deposition(PLD) method. The stacking periodicity of BTO/STO superlattice structure was varied from $BTO_{1\;unit\; cell}/STO_{1\;unit\; cell}$ to $BTO_{125\;unit\; cell}/STO_{125 \;unit \;cell}$ thickness with the total thickness of 100 nm. The result of X-ray diffraction showed the characteristics of superlattice in the BTO/STO multilayer structure. we have also confirmed that there was no interdiffusion at the interface between BTO and STO layers by high resolution transmission electron microscopy(HRTEM). The dielectric constant of superlattice increased with decreasing stacking periodicity of the BTO/STO superlattice within the critical thickness. The dielectric constant of the BTO/STO superlattice reached a maximum i.e., 1230 at a stacking perioicity of $BTO_{2\;unit\; cell}/STO_{2\;unit\; cell}$ .

Design and fabrication of a holographic scanner using the ray tracing method (광선 추적을 이용한 홀로그래픽 스캐너의 설계 및 제작)

  • 김종재;정만호
    • Korean Journal of Optics and Photonics
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    • v.10 no.2
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    • pp.107-113
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    • 1999
  • Low-aberration holographic scanners that eliminate the need for lenses and mirrors promise to greatly reduce the cost of laser printers and image scanners. In this study, a holographic optical element that can simultaneously scan and focus a laser beam is designed with analytic ray tracing method. An analytic and experimental work is conducted in which we investigated the hologram structure and hologon configuration for linear aberration-free scanning. For a prototype scanner, a He-Ne laser is used to manufacture and reconstruct the hologram, and the measured bow is about $\pm$133$\mu\textrm{m}$ and spot size(half-intensity beamwidth) in under 100$\mu\textrm{m}$ for a 300 mm scan length without using a correcting lens or mirror. The diffraction efficiency is about 55$\pm$5%, which is acceptably flat. The experimentally measured results agrees with the computed values. From this fact, we can conclude that the computed results using ray tracing method are practical and useful values, and have a potential for use in high resolution laser printers.

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The UV Laser Ablation of Cr film on Glass Substrate (UV레이저를 이용한 Cr 박막의 어블레이션)

  • Yoon, Kyung-Ku;Lee, Seong-Kuk;Kim, Jae-Gu;Choi, Doo-Sun;Whang, Kyung-Hyun;Jung, Jae-Kyoung;Jang, Won-Suk;Na, Suck-Joo
    • Journal of the Korean Society for Precision Engineering
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    • v.17 no.8
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    • pp.134-139
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    • 2000
  • In order to understand the removal mechanism and seek the optimal conditions. KrF excimer laser ablation of Cr films on glass substrates is investigated. The surface morphology of the laser-irradiated spot is examined by SEM. The measured single-shot ablation rate is found to be about two times the result of numerical analysis based on a surface vaporization model and heat conduction theory. Surface morphology examination indicates that the Cr film is removed by the sequence of melting-surface vaporization-,melt expulsion by plasma recoil and that the outmost ripple of the diffraction pattern gives a strong effect on the morphology of molten Cr during the melting and vaporization processes. To seek the optimal process parameters for micro patterning morphological investigation is carried out experimentally on samples having different chromium film thicknesses. Optimal processing conditions are determined to enhance the accuracy and quality of thin film removal for micro patterning.

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Contact Microscopy by Using Soft X-ray Radiation from Iodine Laser Produced Plasma (옥소레이저 플라즈마에서 발생된 연 X-선을 이용한 밀착현미경기술)

  • 최병일;김동환;공홍진;이상수
    • Korean Journal of Optics and Photonics
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    • v.1 no.1
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    • pp.46-51
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    • 1990
  • Laser plasma was generated by a 1GW iodine photodissociation laser ($\lambda$=1.315$\mu\textrm{m}$, E=12.7J) whose output beam was focused on a molybdenum target surface. The experiment was conducted in a vacuum chamber under 1D-sTorr and several tens of laser shooting were necessary for sufficient exposure for the PBS resist of 111m thickness. Aluminium was coated on the top of the resist by 0.1$\mu\textrm{m}$ thickness which acts as an X-ray filter to cut off the visible and the ultraviolet lights. A bio-specimen was put directly on the aluminium coated resist and located at a distance of 3 cm from the X-ray source. The replicas of a steel mesh, spider's web. and a red blood cell were obtained by this technique and were observed by Nomarski microscope and SEM. The limitation of its resolution is determined by the X-ray source size and Fresnel diffraction effect, and its theoretical prediction is well matched with the experimental results. In this experiment, a resolution better than 0.1$\mu\textrm{m}$ could be obtained. ained.

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Penetration behavior by carbon potential in laser-carburized TiZrN coatings (TiZrN 코팅의 레이저 침탄에서 탄소 포텐셜에 따른 침입 거동)

  • Lee, Byunghyun;Kim, Taewoo;Hong, Eunpyo;Kim, Seonghoon;Lee, Heesoo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.6
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    • pp.282-286
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    • 2021
  • Penetration depth and compressive residual stress of laser-carburized TiZrN coating by thickness of carbon paste were investigated in terms of carbon potential. The carbon paste was covered with a thickness of 1.1 mm using screen printing, and applied to a thickness of 0.4 mm using spin coating, and laser carburization was performed under the same conditions. As the thickness of carbon paste increased, the diffraction pattern of the laser-carburized TiZrN coating shifted to a lower angle, indicating solid solution strengthening and lattice distortion. For microstructure analysis using TEM, the defects and carbon concentration of the laser-carburized TiZrN coating increased as the carbon paste was thicker. It indicated that the variation of the carbon potential corresponds to the change in the paste thickness. In XPS depth profile analysis, high concentration of carbon and formation of carbide were observed in laser-carburized TiZrN coating with thick carbon paste. It revealed that the carbon concentration on the surface and carbon potential were changed by the thickness control of carbon paste. The compressive residual stress increased from 3.67 GPa to 4.58 GPa by the variation of carbon concentration.

Optical metrology for resonant surface acoustic wave in RF device (RF 소자의 표면탄성파 공진에 대한 광학적 측정)

  • Park, Jun-Oh;Jang, Won-Kweon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.9
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    • pp.3435-3440
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    • 2010
  • Unlike the electric method capable of checking only product defect, the real time optical metrology is suggested for measuring and visualizing vibration with respect to position of surface acoustic wave in RF device. The measuring limits and conditions for surface acoustic wave is given, and the interference and diffraction due to RF signal are analyzed by optical interpretation. A single mode laser and a 105MHz-center-frequency repeater filter were employed for experiments and theoretical analysis. In this paper, the optical metrology providing visual energy distribution and real time inspection for surface acoustic wave is proposed for development of high quality multi-service and multi-frequency RF module.

Polarization multiplexing of holography memory in photopolymer (포토폴리머에서 편광방식을 이용한 홀로그래픽 메모리의 다중화)

  • Jeong, Hyeon-Seop;Kim, Nam;Sin, Chang-Won;Kim, Eun-Gyeong
    • Proceedings of the Optical Society of Korea Conference
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    • 2007.07a
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    • pp.275-276
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    • 2007
  • A multiplex recording and reading technique in photopolymer are presented In order to record the polarization gratings, polarization-sensitive materials, in which linear birefringence is induced by irradiating the polarized light, are necessary. We checked orthogonal and independence of laser. The value of the photoinduced linear polarization had effect on diffraction properties in the holographic gratings. The grating strengths of two polarization are investigated and the relevant parameters for equal diffraction intensity readout are optimized.

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