• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.688-691
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• 1997

Good quality superconducting $YBa_2Cu_30_{7-{\delta}}$(YBCO) thin films were grown on Hastelloy (Ni-Cr-Mo alloys) with yttria-stabilized zirconia(YSZ) buffer layers by in situ pulsed laser deposition in a multi-target processing chamber. Generally, Hastelloy exhibits excellent resistance to corrosion, fatigue, thermal shock, impact, and erosion. However, it is difficult to make films on flexible metallic substrates due to interdiffusion problems between metallic substrates and superconducting overlayers. To overcome this difficulty, it is necessary to use YSZ buffer layer since it will not only limit the interdiffusion process but also minimize the surface microcrack formation due to smaller mismatch between the film and the substrate. In order to enhance the crystallinity of YBCO films on metallic substrates, YSZ buffer layers were grown at various temperatures different from the deposition temperature of YBCO films. On YSZ buffer layer grown at higher temperature than that for depositing YBCO film, the YBCO thin film was found to be textured with c-axis orientation by x-ray diffraction and had a zero-resistance critical temperature of about 85K.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.288-290
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• 1997

Pulsed laser ablation has been used to fabricate superconducting $YBa_2Cu_3O_{7-x}$(YBCO) thin films on MgO substrates. The epitaxial YBCO thin films were grown at $750^{\circ}C$ and oxygen partial pressure of 200 mTorr. The electrical property and the characteristics of the YBCO thin films have been studied by R-T measurement. scanning electron microscopy (SEM) and X-ray diffraction (XRD). A microstrip line resonator has been fabricated using YBCO superconducting thin films by photolithography and wet-etch process. The resonator has linear microstrip line separated by a gap of 0.278 mm. We observed a fundamental resonance peak at the frequency of 10.007 GHz.

• Journal of Mechanical Science and Technology
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• v.19 no.5
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• pp.1131-1137
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• 2005

Methods for measuring surface roughness based on light reflectivity have advantages over methods based on light interference or diffraction, especially in in-situ, on-the-machine and in-process applications. However, measurement inconsistencies caused by changes in the specimen are still a drawback for field applications. In this study, we propose a new feedback-based algorithm to enhance the consistency against changes in the specimen. The algorithm is deduced from simulations based on light reflectance theory with typical modeled surfaces. The proposed method is similar to a digital controller and regulates the power of reflected light. Experiments varying heights and materials, verified the improvements in robustness of the method against measurement disturbances caused by specimen changes.

• Laser Solutions
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• v.2 no.2
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• pp.27-33
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• 1999

Electron beam was applied on the low carbon steel in order to fabricate Metal/Metal GBM(Graded Boundary Material). Ni sheet was placed on the steel substrate. The electron beam was irradiated on the surface and produced a homogeous alloyed layer. Sequential repetition of electron beam treatments for 4 times resulted in 8mm thick graded layer. To determine each layers property, optical microscopy, XRD, microhardness tester and EDS were used. The residual stress was measured by the low angle x-ray diffraction method. The graded boundary layer was stepwise profile, but Ni content incresed up to 80 wt% and Fe content decreased 20 wt% near surface. Each layers microstructure and hardness varied by different Fe/Ni composition. The compressive residual stress was induced by martensite transformation in the 1st and End layers and the shrinkage cracks were formed in graded layer by rapid cooling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.184-189
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• 2002

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with/without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increased of a crystallite size int he films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. The surface morphology of the films with a deposition time of 2 hours was studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.6-6
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• 2003

Highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was grown by pulsed-laser-vaporization of BN, where synchronous reactive-plasma packets assisted the crystal growth in the vapor phase. The structure of the product crystallites (˙5 micrometers) was confirmed by using transmission electron diffraction and electron energy loss spectroscopy. This material proved to have a sharp and dominant band at 225 nm by cathode luminescence at room temperatures and corresponding monochromatic images revealed that they uniformly emitted the ultraviolet light. Considering that cubic BN has already been doped as p- and n- type semiconductors, this material may be applied to the light-emitting devices working at almost the deepest limit of the UV region that is functional without vacuum.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.94-103
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• 1995

Thin film acoustooptic beam deflector in proton-exchanged Y-cut LiNbO$_{3}$ was fabricated and measured. The planar waveguide was fabricated by using the proton-exchanged and annealing method in Y0cut LiNbO$_{3}$. Interdigital transducer for SAW(surface acoustic wave) was made by the laser lithography. Using above method, the thin film acoustooptic beam deflector was constructed. Its SAW wavelength was 20.mu.m at 174MHz center frequency. The interaction length between guided optical wave and SAW was 2.16mm. The measured 3dB bandwidth was 17MHz using He-Ne laser. And 70% diffraction efficiency was obtained at 970mW RF driving power.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.643-650
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• 1993

NdAl3(BO3)4 have been developed for miniature solid state laser material. Single crystals of NdAl3(BO3)4 were grown by TSSG technique using BaB4O7 flux. The effects of growth conditions such as cooling rate, seed orientation and rotation speed on crystal quality and the morphology were studied. At the cooling rate of 2.4$^{\circ}C$/day and the crystal rotation speed of 30~40rpm with the seed orientation in <201> or <100> directions, transparent and light violet colored crystals in size of 10$\times$15$\times$20㎣ with well developed {010}, {111}, {111}, {021}, {001}, {102}, {112}, {021} faces were obtained. By X-ray diffraction analysis, the space group was determined as C2/c, and the X-ray powder data was obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.97-103
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• 2014

Phase transition properties of the copolymer films of polyvinylidene fluoride (PVDF) and trifluoroethylene(TrFE), P(VDF-TrFE), were studied with X-ray diffraction (XRD) and polarization modulated ellipsometry (PME). XRD studies on both Langmuir-Blodgett (LB) films and spin coated films exhibit conversions from ferroelectric phase to paraelectric phase at $108{\pm}2^{\circ}C$ on heating and paraelectric phase to ferroelectric phase at $78{\pm}2^{\circ}C$ on cooling. The presence of the ferroelectric-paraelectric phase transition is also confirmed by the PME technique for the first time in this study. PME was proved to be a very sensitive tool in the measurement of the structural changes at the nano-thickness films.