• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2006.05a
• /
• pp.475-476
• /
• 2006

Self-assembled monolayers (SAMs) formed by the adsorption of alkanethiols, HS(CH2)nX, where X is an organic functional group, onto gold surfaces have attracted widespread interest as templates for the fabrication of molecular and biomolecular microstructures. Previously photopatterning has been thought of as being restricted to the micron scale, because of the well-known diffraction limit. So, we have explored a novel approach to nanofabrication by utilizing a femtosecond laser.

• Proceedings of the KIEE Conference
• /
• 2000.11c
• /
• pp.422-424
• /
• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.9
• /
• pp.756-759
• /
• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on $c-Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.828-830
• /
• 2000

Various substrates were compared for the investigation of the optical properties of ZnO thin films. ZnO thin films have been deposited on (100) p-type silicon substrates and (001) sapphire substrates by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. Oxygen and nitrogen gases were used as ambient gases. Substrate temperatures were varied in the range of 200$^{\circ}C$ to 600$^{\circ}C$ at a fixed ambient gas pressure of 350 mTorr. ZnO films have been deposited on various substrates, such as Si and sapphire wafers. We have investigated substrate effect on the optical and structural properties of ZnO thin films using X-ray diffraction (XRD) and photoluminescence (PL).

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.44 no.8
• /
• pp.1063-1067
• /
• 1995

The superconducting properties of YBa$_{2}$Cu$_{3}$$O_{7-x}$(YBaCuO) thin films prepared by laser ablation have been investigated. The x-ray diffraction patterns and surface morphology of the films were substantially different from one another. The compositional ratios of YBaCuO films were controlled by the conditions of the target-substrate distance. The YBaCuO films manufactured on MgO(100) substrate were indicated T$_{c}$(zero)=91.2 K, T$_{c}$(onset)=93 K, and J$_{c}$=3.5*10$^{5}$ A/cm$^{2}$(at 77.3K). The optimum conditions were found to be a substrate temperature of 710 .deg. C, a energy density of 2 J/cm$^{2}$, and a target-substrate distance of 60 mm in an oxygen partial pressure of 200 mTorr.0 mTorr.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.54-57
• /
• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266 m. During deposition, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $400^{\circ}C$ and flow rate of 350 sccm, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by diffraction (XRD), SEM and the optical of the ZnO were characterized by photoluminescence (PL).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.200-202
• /
• 2004

ZnO thin films were grown at different plume-substrate angles by pulsed laser deposition(PLD). From the X-ray diffraction(XRD) result, all ZnO thin films were found to be well c-axis oriented and c-axis lattice constant approached the value of bulk ZnO as plume-substrate(P-S) angle decreased. The grain size of ZnO thin films measured by atomic force microscopy increased and the UV intensity of ZnO thin films investigated by photoluminescence increased as P-S angle decreased. It is found that the improvement of structural and optical properties mainly comes from the reduction of the flux of ablated species arriving on a substrate per a laser shot by tilting a substrate parallel to the plume propagation direction.

• Journal of the Optical Society of Korea
• /
• v.17 no.6
• /
• pp.486-490
• /
• 2013

A portable infrared laser transmitter delivering a highly uniform detectable beam was demonstrated. It incorporates a flexible beam shaper, comprising a perforated diffuser sheet in conjunction with a pinhole. The beam shaper plays the prominent role of flexibly tailoring the incoming light via both scattering and diffraction, in order to equalize the effective beam width over a long distance. The intensity profile of a generated beam was practically observed, demonstrating that a substantially uniform beam of 70-cm width was achieved for a given threshold detection level, with an average deviation of 6% over a range of 600 m.

• Journal of the Korean Society for Heat Treatment
• /
• v.34 no.6
• /
• pp.281-286
• /
• 2021

Arc ion plating (AIP), laser cladding, and nitriding are methods that can prevent mold damage or repair and create cracks and breakages on the die surface. The dissolution and soldering behavior of coated SKD61 by using arc ion plating, laser cladding, and nitriding was investigated. The structure of the coating was investigated as a function of deposition conditions by X-ray diffraction and the crystallographic orientation was determined using the texture factor. The TiAlN film deposited with AIP showed excellent corrosion resistance in the molten aluminum alloy at 680℃. In this paper, we have detailed the corrosion and mass loss phenomena associated with these steel-cast metal interactions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.12
• /
• pp.1070-1074
• /
• 2002

We have carried out two-beam interference experiments to form holographic gratings on As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, Ag/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by the +lst order intensity. The maximum diffraction efficiency of As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ and MgF$_2$/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer were 0.8%, 1.4% and 3.1% under intensity polarization holography, respectively.