• Title/Summary/Keyword: Laser Absorption Spectroscopy

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Formation of dielectric carbon nitride thin films using a pulsed laser ablation combined with high voltage discharge plasma (펄스 레이저 애블레이션이 결합된 고전압 방전 플라즈마 장치를 이용한 유전성 질화탄소 박막의 합성)

  • Kim, Jong-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.208-211
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    • 2003
  • The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

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Formation of Dielectric Carbon Nitride Thin Films using a Pulsed Laser Ablation Combined with High Voltage Discharge Plasma (펄스 레이저 애블레이션이 결합된 고전압 방전 플라즈마 장치를 이용한 유전성 질화탄소 박막의 합성)

  • 김종일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.7
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    • pp.641-646
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    • 2003
  • The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

Toward Efficacy Improvement in a PDP Discharge Cell from Structural Considerations

  • Tachibana, Kunihide
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.20-23
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    • 2009
  • The efficacy improvement issues in a unit discharge cell have been approached from the structural considerations. The tested cell designs include (a) a coplanar type with annular auxiliary electrode buried in barrier ribs, (b) a coplanar type with split auxiliary electrodes also burred in barrier ribs and (c) a coaxial type with a floating electrode stacked on the base electrode. From spatiotemporally resolved optical images of near-IR emission taken by a gated-ICCD camera and relative VUV emission intensity estimated by laser absorption spectroscopy, the differences in the discharge and light emission performances of those three cell types have been compared and discussed.

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Trace Analysis of Water Vapor by Using Diode Laser Absorption Spectroscopy (다이오드레이저 흡수분광 방법을 이용한 수증기 미량 분석)

  • 김택수;김복실;박상언;정의창;정도영
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.07a
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    • pp.176-177
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    • 2003
  • 진공 환경 및 가스에 함유된 미량의 수증기를 정량적으로 분석할 수 있는 계측기는 각종 산업 분야에서 그 필요성이 절실하다. 몇 가지 예를 들면 다음과 같다. 전구 속에 함유된 수증기로 인해 야기되는 텅스텐 필라멘트의 산화현상은 전구의 수명을 현저히 감소시킨다. 밀봉된 금속 전기소자 표면에 흡착된 수증기를 통해 누전 현상이 발생함으로써 소자가 비정상적으로 동작될 우려가 있다. 반도체 산업분야에서는 1 ppb의 수증기가 64 Mb DRAM 제조에 영향을 줄 수 있다는 것이 보고된 바 있다. (중략)

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APPLICATION OF TIME-OF-FLIGHT NEAR INFRARED SPECTROSCOPY TO WOOD

  • Tsuchikawa, Satoru;Tsutsumi, Shigeaki
    • Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
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    • 2001.06a
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    • pp.1182-1182
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    • 2001
  • In this study, the newly constructed optical measurement system, which was mainly composed of a parametric tunable laser and a near infrared photoelectric multiplier, was introduced to clarify the optical characteristics of wood as discontinuous body with anisotropic cellular structure from the viewpoint of the time-of-flight near infrared spectroscopy (TOF-NIRS). The combined effects of the cellular structure of wood sample, the wavelength of the laser beam λ, and the detection position of transmitted light on the time resolved profiles were investigated in detail. The variation of the attenuance of peak maxima At, the time delay of peak maxima Δt and the variation of full width at half maximum Δw were strongly dependent on the feature of cellular structure of a sample and the wavelength of the laser beam. The substantial optical path length became about 30 to 35 times as long as sample thickness except the absorption band of water. Δt ${\times}$ Δw representing the light scattering condition increased exponentially with the sample thickness or the distance between the irradiation point and the end of sample. Around the λ=900-950 nm, there may be considerable light scattering in the lumen of tracheid, which is multiple specular reflection and easy to propagate along the length of wood fiber. Such tendency was remarkable for soft wood with the aggregate of thin layers of cell walls. When we apply TOF-NIRS to the cellular structural materials like wood, it is very important to give attention to the difference in the light scattering within cell wall and the multiple specular-like reflections between cell walls. We tried to express the characteristics of the time resolved profile on the basis of the optical parameters for light propagation determined by the previous studies, which were absorption coefficient K and scattering coefficient S from Kubelka-Munk theory and n from nth power cosine model of radiant intensity. The wavelength dependency of the product of K/S and n, which expressed the light-absorbing and -scattering condition and the degree of anisotropy, respectively, was similar to that of the time delay of peak maxima Δt. The variation of the time resolved profile is governed by the combination of these parameters. So, we can easily find the set of parameters for light propagation synthetically from Δt.

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Synthesis of o-Xylene-Organosilicon Hybrid Polymer and Its Optical Properties

  • Choi, Jin-Kyu;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.34 no.2
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    • pp.515-518
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    • 2013
  • We present synthesis of a new kind of organic-inorganic hybrid polymer, poly xylene-hexamethyltrisiloxane hybrid (PXS) by a new synthetic way from o-xylene and 1,1,3,3,5,5-hexamethyltrisiloxane. The merged molecular structure of the two monomeric components for the PXS polymer was confirmed by $^{13}C$- and $^1H$-NMR, and FT-IR. Its optical absorption and emission properties were investigated by UV-vis absorption and photoluminescence (PL) spectroscopy. The PXS exhibits absorption at 265 nm which is the same with the o-xylene but tailing up to nearly 400 nm, which is maybe related the polymeric structure of the PXS. For the PL investigation, the PXS shows red-shift of the peak from 288 nm (o-xylene) to 372 nm in the case of excitation at 265 nm, at which both PXS and o-xylene have sufficiently high absorption for excitation. When 325-nm laser is used for excitation, the PXS shows a broader peak at 395 nm compared to the excitation at 265 nm and the o-xylene shows no luminescence probably due to the lack of absorption at 325 nm.

Spectroscopy of acetylene (13C2H2) using a tunable erbium-doped fiber ring laser (파장가변 광섬유 링 레이저를 이용한 아세틸렌(13C2H2) 분광)

  • 유한영;오정미;이동한;문한섭;이원규;박갑동;서호성
    • Korean Journal of Optics and Photonics
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    • v.14 no.6
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    • pp.674-679
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    • 2003
  • We fabricated erbium-doped fiber ring laser with a new structure that can operate in C- & L-band wavelength region. The wave-length of the laser can be tuned continuously over 102 nm between 1510.4-1612.6 nm by insertion of the fiber Fabry-Perot tunable filter (FFP-TF) in the ring cavity. By use of the wavelength tunable characteristics of our fiber laser, we measured absorption spectra of more than fifty transition lines of the acetylene ($^{13}$ C$_2$H$_2$) molecule with high signal to noise ratio (SNR).

Preparation and Characterization of Suvarna Bhasma Parada Marit - Characterization of Suvarna Bhasma Parada Marit -

  • Thakur, Kapil;Gudi, Ramacharya;Vahalia, Mahesh;Shitut, Shekhar;Nadkarni, Shailesh
    • Journal of Pharmacopuncture
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    • v.20 no.1
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    • pp.36-44
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    • 2017
  • Objectives: The goal of this study was to characterize Suvarna Bhasma Parada Marit by using the Ayurvedic test parameters, physico-chemical tests, and various instrumentation techniques. Methods: Suvarna Bhasma, an Ayurvedic formulation manufactured as per Bharat Bhaishajya Ratnakar 5/8357 (BBR), has been studied using various instrumentation techniques: X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), laser particle size distribution (PSD) analysis, fourier transform infrared spectroscopy (FT-IR), and atomic absorption spectroscopy (AAS), and physico-chemical parameters, such as the loss on drying (LOD), loss on ignition (LOI), and acid insoluble Ash (AIA) were determined. In addition, Ayurvedic tests, such as Rekhapurnatva (enterable in the furrows of the fingers), Varitaratwa (floatable over water), Nirdhoomta (smokeless), Dantagre Kach-Kach (gritty particle feeling between the teeth), were performed. Results: The XRD study showed Suvarna Bhasma to be crystalline in nature and to contain more than 98% gold. The mean size of the gold crystallites was less than 10 microns, and the morphology was globular and irregular. Suvarna Bhasma contains gold as its single and major element, with EDAX and FT-IR spectra showing that it is more than 98% pure gold. The moisture content (LOD) is less than 0.5%, the LOI is less than 2%, and the AIA is not less than 95%. The Ayurvedic tests, as specified above, helped to confirm the quality of Suvarna bhasma prepared as per the text reference (BBR). Conclusion: This chemical characterization of Suvarna Bhasma performed in this study by using modern instrumentation techniques will be helpful in understanding its pharmacological actions and will help in establishing quality protocols and specifications to substantiate the safety, efficacy & quality of Suvarna Bhasma.

Measurement of excited Xe atoms density in accordance with various barrier ribs in AC-PDP by laser absorption spectroscopy

  • Jeong, Se-Hoon;Oh, P.Y.;Hong, Y.J.;Lee, S.B.;Moon, M.W.;Song, K.B.;Lee, H.J.;Yoo, N.L.;Son, C.G.;Han, Y.G.;Jeong, S.J.;Kim, J.H.;Park, E.Y.;Choi, Eun-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.949-952
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    • 2006
  • We have measured the excited Xe atoms density in the $1s_5$ metastable states by laser absorption spectroscopy in accordance with various barrier ribs. In this experiment, the average density of one cell in the panel with stripe barrier rib has been measured to be $1.8{\times}10^{12}cm^{-3}$. The panel with close type barrier rib has been measured to be $5.1{\times}10^{12}cm^{-3}$.

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Optical Gap Bowing and Phonon Modes of Amorphous Ge1-x-ySexAsy Thin Films

  • So, Hyeon-Seop;Park, Jun-U;Jeong, Dae-Ho;Lee, Ho-Seon;Sin, Hye-Yeong;Yun, Seok-Hyeon;An, Hyeong-U;Kim, Su-Dong;Lee, Su-Yeon;Jeong, Du-Seok;Jeong, Byeong-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.288.1-288.1
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    • 2014
  • We investigated the optical properties of Ge1-xSex and Ge1-x-ySexAsy amorphous semiconductor films using spectroscopic ellipsometry and Raman spectroscopy. The dielectric functions and absorption coefficients of the amorphous films were determined from the measured ellipsometric angles. We obtained the optical gap energies and Urbach energies from the absorption coefficients, and found a strong bowing effect in the optical gap energy of Ge1-x-ySexAsy where the endpoint binaries were Ge0.50Se0.50 and Ge0.31As0.69. Based on the correlation between optical gap energies and Urbach energies, the large bowing parameter was attributed to the electronic disorder. We found the composition dependence of several phonon modes using Raman spectroscopy. For Ge1-x-ySexAsy, the D mode (232-267 cm-1) changed from As-As (or As3 pyramid), to As(Se1/2)3 pyramid, and finally to Se clusters, as the Se composition increased. Resonant Raman phenomenon was observed in Ge0.38Se0.62 at a laser excitation of 514 nm (2.41 eV). We verified that this laser energy corresponds to the transition energy of Ge0.38Se0.62 using the second derivative of the dielectric function of Ge0.38Se0.62.

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