• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.64-70
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• 1995

A new DC drain-current model of GaAs MESFET with improved accuracy is proposed in this paper. The proposed model includes the decrease of current slope according to gate voltages. It is possible to represent a transconductance compression using the proposed model. It shows improved transconductance and output resistance in accuracy from the forward biased gate region to near the cutoff region. The wquaer error of saturation current is decreased by 46% compared with Statz model. The proposed model can be useful for the simulation of large-signal operation and harmonic distortion.

• Journal of Korea Society of Industrial Information Systems
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• v.6 no.3
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• pp.123-127
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• 2001

The prediction method of the parameter C/sub gs/ of CMOS transistor is proposed by calculating the mobil charge in inversion layer of COMS transistor. This parameter C/sub gs/ decided on the cutoff frequency in MOS transistor in RF range and coupled input and output. This parameter C/sub gs/ in RF range is very important parameter in small signal circuit model. This proposed method is contributed to developing software of extracting parameter value in equivalent circuit model. The method provide the important information to construct a RF nonlinear model for multifinger gate MOSFET. This method will be very valuable to develop a large signal MOSFET model for nonlinear RF IC design.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2002.04a
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• pp.300-307
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• 2002

Damage estimation methods are classified into two groups according to the dependence on the FE model : signal-based and model-based methods. Signal-based damage estimation methods are generally appropriate for detection of damage location, whereas not effective for estimation of damage severities. Model-based damage estimation methods are difficult to apply directly to the structures with a large number of the probable damaged members. It is difficult to obtain the exact model representing the real bridge behavior due to the modeling errors. The modeling errors even may exceed the modal sensitivity on damage. In this study, Model-based damage detection method which can effectively consider the modeling errors is suggested. Two numerical example analyses on a simple beam and a multi-girder bridge are presented to demonstrate the effectiveness of the presented method.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.49-58
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• 1998

In this paper, a new equivalent circuit model for quantum-well laser diode (LD) is proposed. The model includes carrier transport effects in the SCH region, and rprovides, in a stable and accurate manner, large-and small-signal responses of laser diode output power as function of injected currents. SPICE simulation was performed using the circuit model and results are presented for L-I characteristics, pulse and frequency responses under various conditions. It is expencted that the new equaivalent circuit model will find useful applications for designing and analyzing OEIC, LD driver circuits, and LD packaging.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.4
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• pp.593-600
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• 2016

The solar array regulator for low earth orbit satellites controls a operating point of solar array for suppling electric power to the battery and the other units. Because the control object is reversed, the new approach for large and small signal analysis is needed despite using buck-converter for power stage. In this paper, the steady state analysis of solar array regulator is performed in continuous conduction mode and discontinuous conduction mode, and the border condition for each mode is established. Also, the small signal model of solar array regulator is established in discontinuous conduction mode. Experiments are carried on in worst condition which the solar array regulator can face with discontinuous conduction mode. The results show that the solar array regulator is in stable.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.705-711
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• 2003

In this Paper, 2${\times}$100 $\mu\textrm{m}$ AlCaN/GaN HEMT's(on sapphire substrate) large signal model including thermal effect was extracted. An equation based empirical model was employed to make large signal model for convergence and high speed. Pulsed I-V measurement was performed to extract thermal resistance and capacitance. Power amplifiers with 9 mm and 15 mm AlCaN/GaN HEMTS were designed using scaled modeling results of 2${\times}$100 $\mu\textrm{m}$ device respectively. From comparisons between measured and simulated data, the model considering of thermal effects gave better agreement than without one. It demonstrates that thermal modeling must be performed for power amplifier that uses large size transistors.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.10
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• pp.1703-1707
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• 2008

Low frequency oscillation of inter-area system is important problem in power system areas because the operation conditions of power system depend on it. Generally, the analysis of the problem is used by small signal stability. Especially, the analysis results are affected by decision of load models. In this paper, the effect of the analysis results was studied according to load component characteristics. ZIP model, popular in large-scaled power system analysis, was used as the load model. Many cases were studied according to the combination of ZIP model in inter-area system.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.126-129
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• 1999

This paper presents a new averaged model for controlled on time boost power factor correction (PFC) circuit. The proposed model accurately predicts the average behavior of the PFC circuit, and offers a good alternative in studying the large signal dynamics of the circuit. The accuracy of the model is verified through both computer simulation and experiments.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.4C
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• pp.371-379
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• 2002

In this paper, the MMIC SPST switches operating from DC to 3GHz were designed and implemented. Prior to the design of switches, the small and large-signal switch models were needed to predict switch performance accurately. The newly proposed small-signal switch model parameters were extracted from measured S-parameters using optimization technique with estimated initial values and boundary limits. In the extraction of large-signal switch model parameters, the current source was modeled by fitting empirical equations to measured DC data and the charge model was derived from extracted channel capacitances from measured S-parameters varying the drain-source voltage. To design basic series-shunt SPST switches and isolation-improved SPST switches, we applied this model to commercial microwave circuit simulator. The improved SPST switches exhibited 0.302dB insertion loss, 35.762dB isolation, 1.249 input VSWR, 1.254 output VSWR, and about 15.7dBm PldB with 0/-3V control voltages at 3GHz.

• Journal of Korean Society of Transportation
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• v.5 no.2
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• pp.5-18
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• 1987

Buses arrive at a traffic intersection later than passenger cars by the amount of dwell time at previous bus stops. This late arrival of buses affects the total passenger delay at intersections especially in the street carrying large bus volume. The bus progression signal system in which the signal offset is given in favor of bus platoons was applied in the case area of Kangnam street in Seoul, and various effects were analyzed using the TRANSYT-7F simulation model. It was observed that the total passenger delay can be reduced significantly if the bus progression signal system is applied, and the most effective bus priority treatment is proved to be the bus progression signal system installed with exclusive bus lanes.